Publications associées à Spice Simulation of Passive Protection in Smart Power ICs

Microstructural and electrical characterization of high temperature passivating contacts for silicon solar cells

Recombination at metal/semiconductor interfaces represents the main limitation in mainstream c-Si solar cells, primarily based on the passivated emitter and rear cell (PERC) concept. Full-area passivating contacts based on SiOx/poly-Si stacks are a candida ...

EPFL2024

Graph generative deep learning models with an application to circuit topologies

Igor Krawczuk

Modern integrated circuits are tiny yet incredibly complex technological artifacts, composed of millions and billions of individual structures working in unison. Managing their complexity and facilitating their design drove part of the co-evolution of mode ...

EPFL2024

In Liquido Computation with Electrochemical Transistors and Mixed Conductors for Intelligent Bioelectronics

Eleni Stavrinidou, Matteo Cucchi

Next-generation implantable computational devices require long-term-stable electronic components capable of operating in, and interacting with, electrolytic surroundings without being damaged. Organic electrochemical transistors (OECTs) emerged as fitting ...

Wiley-V C H Verlag Gmbh2023

Automating the Design of Programmable Interconnect for Reconfigurable Architectures

Stefan Nikolic

With Moore's law coming to an end, increasingly more hope is being put in specialized hardware implemented on reconfigurable architectures such as Field-Programmable Gate Arrays (FPGAs). Yet, it is often neglected that these architectures themselves experi ...

EPFL2023

Dielectric Elastomer Actuator-Based Valveless Impedance-Driven Pumping for Meso- and Macroscale Applications

Yves Perriard, Yoan René Cyrille Civet, Silje Ekroll Jahren, Thomas Guillaume Martinez, Francesco Clavica, Armando Matthieu Walter, Amine Benouhiba

Impedance pumps are simple designs that allow the generation or amplification of flow. They are fluid-filled systems based on flexible tubing connected to tubing with different impedances. A periodic off-center compression of the flexible tubing causes the ...

2023

In-vivo investigation of electrochemical behavior of Ti and CoCrMo alloy in human synovial fluids

Yueyue Bao

With the development of modern medical techniques, the application of orthopedic implants has been continually increasing in recent years. Passive materials, such as Ti and its alloys as well as CoCrMo alloys, are widely used in artificial joints due to th ...

EPFL2023

A Deep-Learning Approach to Side-Channel Based CPU Disassembly at Design Time

Mirjana Stojilovic

Side-channel CPU disassembly is a side-channel attack that allows an adversary to recover instructions executed by a processor. Not only does such an attack compromise code confidentiality, it can also reveal critical information on the system’s internals. ...

IEEE2022

Characterization and Development of Fired Passivating Contacts for Silicon Solar Cells

Mario Joe Lehmann

One of the key elements to improve mainstream crystalline silicon (c-Si) solar cell performance is surface passivation, which is at the center of the ongoing transition from cells with direct silicon-metal contacts to full area passivating contacts. In the ...

EPFL2022

Design and management of three-dimensional multi-processor systems-on-chip with integrated flow cell arrays

Halima Najibi

Three-Dimensional Multi-Processor Systems-on-Chip (3D MPSoCs) are promising solutions for highly intensive Artificial Intelligence (AI) and Big Data applications. They combine remarkably dense computation capabilities and massive communication bandwidths. ...

EPFL2022

A 500 x 500 Dual-Gate SPAD Imager With 100% Temporal Aperture and 1 ns Minimum Gate Length for FLIM and Phasor Imaging Applications

Claudio Bruschini, Edoardo Charbon, Arin Can Ülkü, Andrei Ardelean, Paul Mos, Michael Alan Wayne

In this article, we report on SwissSPAD3 (SS3), a 500 x 500 pixel single-photon avalanche diode (SPAD) array, fabricated in 0.18-mu m CMOS technology. In this sensor, we introduce a novel dual-gate architecture with two contiguous temporal windows, or gate ...

IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC2022

Nanowatt Acoustic Inference Sensing Exploiting Nonlinear Analog Feature Extraction

Christian Enz, Minhao Yang, Jun Zhang

Ultralow-power sensing with inference functionality embedded in sensor nodes is essential for enabling the emerging pervasive intelligence. For acoustic inference sensing, the feature extraction can take advantage of power-efficient analog circuits. Howeve ...

IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC2021

A novel approach for SPICE modeling of light and radiation effects in ICs

Chiara Rossi

Modeling the interaction of ionizing radiation, either light or ions, in integrated circuits is essential for the development and optimization of optoelectronic devices and of radiation-tolerant circuits. Whereas for optical sensors photogenerated carriers ...

EPFL2021

Cryogenic MOSFET Modeling for Large-Scale Quantum Computing

Arnout Lodewijk M Beckers

Promising results of state-of-the-art quantum computers fuel a world-wide effort in academic and private research laboratories to scale up the number of qubits and improve their characteristics in large arrays. To meet the scale-up challenge, innovative mi ...

EPFL2021

Cryogenic CMOS Integrated Circuits for Scalable Readout of Silicon Quantum Computers

Andrea Ruffino

Quantum computing promises to revolutionize our lives, achieving unprecedented computational powers and unlocking new possibilities in drug discovery, chemical simulations and cryptography. The fundamental unit of computation of a quantum computer is the q ...

EPFL2021

Microscale Liquid Metal Conductors for Stretchable and Transparent Electronics

Giuseppe Schiavone, Laurent Mirko Dejace, Stéphanie Lacour, Ivan Furfaro, Haotian Chen

Integrated wearable electronics capable of transducing and transmitting biophysical information on complex and dynamic systems are attracting high interest across the consumer electronics, clinical, and research domains. Gallium and gallium-based liquid me ...

Wiley2021

Prediction of optically-triggered amplification in phototransistor with SPICE circuit simulators

Jean-Michel Sallese, Chiara Rossi

Modeling of optoelectronic devices involves long and complex numerical simulations, usually performed with TCAD tools. Numerical simulations provide accurate results for a single device but are not feasible when dealing with a full circuit comprising sever ...

SPIE-INT SOC OPTICAL ENGINEERING2020

A hysteresis-free perovskite transistor with exceptional stability through molecular cross-linking and amine-based surface passivation

Mohammad Khaja Nazeeruddin, Peng Gao, Hobeom Kim

Organo-metal halide perovskite field-effect transistors present serious challenges in terms of device stability and hysteresis in the current-voltage characteristics. Migration of ions located at grain boundaries and surface defects in the perovskite film ...

ROYAL SOC CHEMISTRY2020

Chemo-mechanical effects on the tribocorrosion behavior of titanium/ceramic dental implant pairs in artificial saliva

Anna Neus Igual Muñoz, Alejandro Roda Buch

In this paper, the degradation mechanisms of the ceramic and the metal in Titanium/Zirconia pairs for biomedical applications were analyzed. To do that, an experimental set-up with well-controlled mechanical and chemical conditions was used based on a unid ...

2019

Polarity-Controllable Devices and Circuits for Doping-Free 2D Electronics

Giovanni Vincenzo Resta

The growth of information technology has been sustained by the miniaturization of Complementary Metal-Oxide-Semiconductor (CMOS) Field-Effect Transistors (FETs), with the number of devices per unit area constantly increasing, as exemplified by Mooreâ s la ...

EPFL2019

JESD204B Compliant 12.5 Gb/s LVDS and SST Transmitters in 28 nm FD-SOI CMOS

Yusuf Leblebici, Seyed Armin Tajalli, Andreas Peter Burg, Ayça Akkaya, Firat Çelik

JESD204B compliant low-voltage differential signaling (LVDS), and source-series-terminated (SST) transmitters in 28 nm FD-SOI CMOS technology are presented with 1.1 pJ/bit and 1.7 pJ/bit at 12.5 Gb/s, respectively. An external 6.25 GHz single-ended clock, ...

IEEE2019