Fully Passivated AlInN/GaN HEMTs With f(T)/f(MAX) of 205/220 GHz

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The RF performance of lattice-matched InAlN/GaN heterostructure field-effect transistors (HFETs) and Al2O3/InAlN/GaN metal-oxide-semiconductor HFETs (MOSHFETs) with varied gate length was evaluated. The current gain cutoff frequency f(T) and the maximum os ...

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We report the first 94-GHz (W-band) large-signal performance of AlInN/GaN high-electron-mobility transistors (HEMTs) grown on high-resistivity silicon (111) substrates. A maximum output power density of 1.35 W/mm and peak power-added-efficiency of 12% are ...

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Fully Passivated AlInN/GaN HEMTs With f(T)/f(MAX) of 205/220 GHz

Chattez avec Graph Search

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