Advanced Silicon and SWIR Single-Photon Avalanche Diodes: Design, Simulation, and Characterization

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We present a single-photon avalanche diode (SPAD) developed in 55 nm bipolar-CMOS-DMOS (BCD) technology, which achieves high photon detection probability (PDP) while its breakdown voltage is lower than 20 V. To enhance the PDP performance, the SPAD junctio ...

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Advanced Silicon and SWIR Single-Photon Avalanche Diodes: Design, Simulation, and Characterization

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Shortwave Infrared-Sensitive, Narrowband Organic Upconversion Devices with a Gain

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Light Emission and Conductance Fluctuations in Electrically Driven and Plasmonically Enhanced Molecular Junctions

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SPAD Developed in 55 nm Bipolar-CMOS-DMOS Technology Achieving Near 90% Peak PDP

Dissipative Kerr soliton generation at 2μm in a silicon nitride microresonator

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Doping Engineering for PDP Optimization in SPADs Implemented in 55-nm BCD Process

Thermo-optic epsilon-near-zero effects

Polarization-enhanced GaN Schottky barrier diodes: Ultra-thin InGaN for high breakdown voltage and low Ron

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