Advanced Silicon and SWIR Single-Photon Avalanche Diodes: Design, Simulation, and Characterization

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Advanced Silicon and SWIR Single-Photon Avalanche Diodes: Design, Simulation, and Characterization

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Silicon CMOS and InGaAs(P)/InP SPADs for NIR/SWIR detection

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SPAD Developed in 55 nm Bipolar-CMOS-DMOS Technology Achieving Near 90% Peak PDP

Dissipative Kerr soliton generation at 2μm in a silicon nitride microresonator

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Doping Engineering for PDP Optimization in SPADs Implemented in 55-nm BCD Process

Thermo-optic epsilon-near-zero effects

Polarization-enhanced GaN Schottky barrier diodes: Ultra-thin InGaN for high breakdown voltage and low Ron

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