The Active Self-controlled Free-wheeling Management Principle Applied to Reverse Recovery Losses Reduction

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The invention relates to a gate unit (22) for controlling a gate commutated thyristor (21), comprising: - a voltage selector (26) for selectively applying a high supply potential (Vpos), a middle supply potential (Vmid), and a low supply potential (Vneg); ...

With the increase in penetration of power electronic converters in the power systems, a demand for overcurrent/ overloading capability has risen for the fault clearance duration. This article gives an overview of the limiting factors and the recent technol ...

GaN metal-oxide-semiconductor high electron mobility transistors (MOS)HEMTs) offer outstanding properties for next-generation power electronics devices. The high conductivity, high voltage blocking capability, high operation frequency, and device-level int ...

The latest standard "New Dual" power module has been developed for both silicon and silicon-carbide devices to meet the increasing demands in high reliability and high temperature power electronic applications. Due to the new package is just starting to re ...

To best utilize power converters, a sound understanding of the relationship between the circuit topology and the power-semiconductor-device characteristics is required. This is especially important in high-frequency switching, where device parasitics start ...

In spite of the dominance of ac technology for the vast majority of power transmission and distribution since the late 19th century, the past decades have seen an increase in use of dc electrical power. In particular, this has been the case both in high vo ...

Gallium Nitride (GaN) has enabled groundbreaking developments in the field of optoelectronics and radio frequency communication. More recently, GaN devices for power conversion applications have demonstrated excellent potential. Thanks to Gallium Nitride w ...

Gallium Nitride (GaN) is a wonder material which has widely transformed the world by enabling energy-efficient white light-emitting diodes. Over the past decade, GaN has also emerged as one of the most promising materials for developing power devices which ...

Series connected IGCTs find application in hard-switched commercial power converters at the MW power levels. Expanding the application of these devices to medium voltage dc-dc resonant converters is of great interest due to the IGCTs low conduction losses. ...

A detailed analysis on the Sawyer–Tower method used in the measurement of large-signal output capacitance (Co) of power transistors is presented, followed by important design recommendations to obtain accurate results. Key factors affecting the proper impl ...

The deexcitation of a synchronous machine has been used for the protection of the power supply based on a diode rectifier in marine dc power distribution networks. The fault current from the generator can be eliminated with the protection method utilizing ...

Wide-band-gap technologies enable ultra-high efficiencies in high-frequency power conversion. However, inadequate accuracies in electrical measurements could lead to spurious efficiency measurements, even above 100%. Furthermore, bandwidth limitations, par ...

Driven by the environmental changes, penetration of renewables and the need for more flexible power grid, DC is reemerging as a basis for future power networks. Already established in the area of HVDC for very long distance transmission, more and more atte ...

In this work, we report on the switching performance of AlGaN/GaN lateral Tri-Anode SBDs. The Tri-Anode architecture leads to a more than 50% reduction in the device charge with respect to conventional planar structure, confirmed both by capacitive and rev ...

Specific applications, such as dielectric elastomer actuators (DEAs) or electroactive polymers, require to switch voltage levels exceeding the ratings of existing semiconductor devices. In low power application, reversible flyback are widely used to supply ...

The broad applications of ultrawide-band signals and terahertz waves in quantum measurements, imaging and sensing techniques, advanced biological treatments, and very-high-data-rate communications have drawn extensive attention to ultrafast electronics. In ...

Utilization of the Integrated Gate Commutated Thyristor as a semiconductor switch in the Series Resonant Converter for isolated medium voltage DC-DC conversion offers an opportunity for high conversion efficiency while operating at the high switching frequ ...

We report the first demonstration of fully-vertical power MOSFETs on 6.6-μm-thick GaN grown on a 6-inch Si substrate by metal-organic chemical vapor deposition (MOCVD). A robust fabrication method was developed based on a selective and local removal of the ...

Partial shading can trigger permanent damage in photovoltaic modules because the illuminated solar cells drive the shaded cells into reverse bias. Under reverse bias conditions, perovskite solar cells have been shown to degrade quickly due to processes tha ...

Vacuum circuit breakers (VCBs) are widely used for medium voltage applications when low maintenance, long operating life, and large number of allowable switching cycles are required. The accurate estimation of the transient recovery voltages (TRVs) associa ...

The Active Self-controlled Free-wheeling Management Principle Applied to Reverse Recovery Losses Reduction

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High performance Fully-vertical GaN-on-Si power MOSFETs

Instability of p-i-n perovskite solar cells under reverse bias

Vacuum circuit breaker modelling for the assessment of transient recovery voltages: Application to various network configurations