Piezoelectric and dielectric properties of sputter deposited (111), (100) and random-textured Pb(ZrxTi1-x)O-3 (PZT) thin films

Highly textured PZT(111), PZT(001/100) and random PZT films have been grown on Pt and RuO2 bottom electrodes by means of an in-situ, multimagnetron reactive sputtering process with three metal targets (Pb, Zr, Ti). The orientation was varied with the bottom electrode/PZT initial interlayer deposition conditions. Series of 300 nm thick films with varying composition x have been prepared. The Ti and Zr ratio was changed by adjusting the powers of the corresponding targets. The lead content was self stabilized by the process at the deposition temperature of 570 degrees C. Polarization, dielectric and piezoelectric properties were studied. Coercive field, built-in electric field and unswitchable polarization for Ti-rich compositions have been determined by polarisation hysteresis loops.