Publications associées à Geometrical parameters influence on the Hall effect sensors offset and drift

Adaptive Symplectic Model Order Reduction Of Parametric Particle-Based Vlasov-Poisson Equation

Cecilia Pagliantini, Jan Sickmann Hesthaven, Nicolò Ripamonti

. High-resolution simulations of particle-based kinetic plasma models typically require a high number of particles and thus often become computationally intractable. This is exacerbated in multi-query simulations, where the problem depends on a set of para ...

AMER MATHEMATICAL SOC2023

Secondary structure of the human mitochondrial genome affects formation of deletions

Jacques Fellay, Konstantin Popadin

BackgroundAging in postmitotic tissues is associated with clonal expansion of somatic mitochondrial deletions, the origin of which is not well understood. Such deletions are often flanked by direct nucleotide repeats, but this alone does not fully explain ...

BMC2023

Cryogenic MOSFET Modeling for Large-Scale Quantum Computing

Arnout Lodewijk M Beckers

Promising results of state-of-the-art quantum computers fuel a world-wide effort in academic and private research laboratories to scale up the number of qubits and improve their characteristics in large arrays. To meet the scale-up challenge, innovative mi ...

EPFL2021

Scaling of the translational velocity of vortex rings behind conical objects

Karen Ann J Mulleners, Guillaume de Guyon-Crozier

Ring vortices are efficient at transporting fluid across long distances. They can be found in nature in various ways: they propel squids, inject blood in the heart, and entertain dolphins. These vortices are generally produced by ejecting a volume of fluid ...

2021

Impedance-based real-time position sensor for lab-on-a-chip devices

Philippe Renaud, Harald Van Lintel, Jonathan Bastien Cottet

This paper presents the theoretical and experimental development of an integrated position sensor for lab-on-a-chip devices. The interest for single cell analysis is growing. However, this requires monitoring and controlling cell displacements in real time ...

2018

Cryogenic MOS Transistor Model

Christian Enz, Farzan Jazaeri, Arnout Lodewijk M Beckers

This paper presents a physics-based analytical model for the MOS transistor operating continuously from room temperature down to liquid-helium temperature (4.2 K) from depletion to strong inversion and in the linear and saturation regimes. The model is dev ...

2018

High-Performance Back-Illuminated Three-Dimensional Stacked Single-Photon Avalanche Diode Implemented in 45-nm CMOS Technology

Edoardo Charbon, Preethi Padmanabhan, Myung Jae Lee, Augusto Ronchini Ximenes

We present a high-performance back-illuminated three-dimensional stacked single-photon avalanche diode (SPAD), which is implemented in 45-nm CMOS technology for the first time. The SPAD is based on a P + /Deep N-well junction with a circular shape, for whi ...

2018

Characterization of bipolar transistors for cryogenic temperature sensors in standard CMOS

Edoardo Charbon, Fabio Sebastiano, Harald Arjan Robert Homulle

This paper presents the cryogenic characterization of the bipolar substrate PNPs that are typically employed as sensing elements in CMOS integrated temperature sensors. PNPs realized in a standard 160-nm CMOS technology were characterized over the temperat ...

2017

Modeling and Analysis for Thermal Management in Gallium Nitride HEMTs Using Microfluidic Cooling

Gunjan Agarwal

In this paper, thermal management in GaN (gallium nitride) based microelectronic devices is addressed using microfluidic cooling. Numerical modeling is done using finite element analysis (FEA), and the results for temperature distribution are presented for ...

American Society of Mechanical Engineers2017

A nA Crystal - Less Oscillator for Internet of Things

Maher Kayal, François Krummenacher, Mathieu Yves Hervé Coustans

This work presents an ultra-low power oscillator designed to target different contexts, such as crystal-assisted time keeping, reference oscillator to optimize the always on domain of a microcontroller or wake-up timer. This oscillator enables ultra-low po ...

Ieee2016

Noise Reduction Techniques and Scaling Effects towards Photon Counting CMOS Image Sensors

Christian Enz, Assim Boukhayma

This paper presents an overview of the read noise in CMOS image sensors (CISs) based on four-transistors (4T) pixels, column-level amplification and correlated multiple sampling. Starting from the input-referred noise analytical formula, process level opti ...

Mdpi Ag2016

A New Framework for Distributed Submodular Maximization

Justin Dean Ward

A wide variety of problems in machine learning, including exemplar clustering, document summarization, and sensor placement, can be cast as constrained submodular maximization problems. A lot of recent effort has been devoted to developing distributed algo ...

Ieee2016

Main Parameters Characterization of Bulk CMOS Cross-Like Hall Structures

Maria-Alexandra Paun

A detailed analysis of the cross-like Hall cells integrated in regular bulk CMOS technological process is performed. To this purpose their main parameters have been evaluated. A three-dimensional physical model was employed in order to evaluate the structu ...

2016

Near-Infrared Optical Tomography with Single-Photon Avalanche Diode Image Sensors

Juan Mata Pavia

In the past decades different methods based on magnetic resonance imaging (MRI) and positron emission tomography (PET) have been developed to image a variety of hemodynamic parameters in tissue. However, simultaneous high resolution imaging of oxy- and deo ...

EPFL2015

3.6 GHz CMOS Ring Oscillator with Low Tune Voltage Sensitivity and Temperature Compensation

Yusuf Leblebici, Hasene Gülperi Özsema, Tugba Demirci

In this paper we present the design of a temperature compensated low-tune-voltage-sensitive CMOS ring oscillator in 40nm standard CMOS technology. The oscillator has an overall frequency range from 3.1 GHz to 3.6 GHz. The effect of temperature variations o ...

2015

Hydro-acoustic resonance behavior in presence of a precessing vortex rope: observation of a lock-in phenomenon at part load Francis turbine operation

François Avellan, Andres Müller, Christian Landry, Arthur Tristan Favrel, Keita Yamamoto

Francis turbines operating at part load condition experience the development of a cavitating helical vortex rope in the draft tube cone at the runner outlet. The precession movement of this vortex rope induces local convective pressure fluctuations and a s ...

IOP science2014

Hydro-acoustic resonance behavior in presence of a precessing vortex rope: observation of a lock-in phenomenon at part load Francis turbine operation

François Avellan, Andres Müller, Christian Landry, Arthur Tristan Favrel, Keita Yamamoto

Francis turbines operating at part load condition experience the development of a cavitating helical vortex rope in the draft tube cone at the runner outlet. The precession movement of this vortex rope induces local convective pressure fluctuations and a s ...

Iop Publishing Ltd2014

Offset And Drift Analysis Of The Hall Effect Sensors. The Geometrical Parameters Influence

Maher Kayal, Jean-Michel Sallese, Maria-Alexandra Paun

Several Hall sensor configurations have been integrated in CMOS 0.35 mu m technology and analyzed in terms of offset at room temperature and offset drift. We searched for the best geometry that would minimize the offset and its corresponding drift. The tar ...

Inst Materials Physics2012

A Hall sensor microsystem with integrated voltage and current references for continuous sensitivity calibration

Maher Kayal, Marc Pastre, Andrea Ajbl

This paper presents a Hall sensor microsystem output and sensitivity calibration targeting low drift (

IEEE2012

RTS Noise Characterization in Single-Photon Avalanche Diodes

Cristiano Niclass, Edoardo Charbon, Lucio Carrara, Mohammad Azim Karami, Matthew Fishburn

Random telegraph signal (RTS) behavior is reported and characterized in the dark count rate of single-photon avalanche Diodes (SPADs). The RTS is observed in a SPAD fabricated in 0.8-mu m CMOS technology and in four proton-irradiated SPADs designed and fab ...

Institute of Electrical and Electronics Engineers2010