Publications associées à Bulk-source-coupled CMOS Quadrature Oscillators

Publications associées (33)

A Cryo-CMOS Wideband Mode-Switching Class-F VCO With Harmonic-Resonance Self-Alignment

Edoardo Charbon, Andrea Ruffino, Jad Benserhir

This article presents a cryogenic mode-switching class-F voltage-controlled oscillator (VCO) aimed at addressing the demand for wideband, low phase noise (PN) local oscillator signals in cryo-CMOS quantum controllers. First, to resolve the issues of manual ...

2025

Gate Driver Power Supply With Low-Capacitance-Coupling and Constant Output Voltage for Medium-Voltage SiC MOSFETs

Rui Wang

With the development of wide band-gap devices, Silicon Carbide (SiC) semiconductor devices in 10 kV–15 kV voltage class offer potentials in medium-voltage (MV) systems. To ensure reliable operation of these MV SiC devices, gate driver power supplies must m ...

2025

Cryogenic quantum computer control signal generation using high-electron-mobility transistors

Kirsten Emilie Moselund

Multiplexed local charge storage, close to quantum processors at cryogenic temperatures could generate a multitude of control signals, for electronics or qubits, in an efficient manner. Such cryogenic electronics require generating quasi-static control sig ...

2024

Ultrahigh-quality-factor micro- and nanomechanical resonators using dissipation dilution

Tobias Kippenberg, Nils Johan Engelsen, Alberto Beccari

Mechanical resonators are widely used in sensors, transducers and optomechanical systems, where mechanical dissipation sets the ultimate limit to performance. Over the past 15 years, the quality factors in strained mechanical resonators have increased by f ...

Nature Portfolio2024

Nano-MOSFET - Foundation of Quantum Computing Part I

Edoardo Charbon

As big strides were being made in many science fields in the 1970s and 80s, faster computation for solving problems in molecular biology, semiconductor technology, aeronautics, particle physics, etc., was at the forefront of research. Parallel and super-co ...

IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC2023

Toward Band n78 Shear Bulk Acoustic Resonators Using Crystalline Y-Cut Lithium Niobate Films With Spurious Suppression

Luis Guillermo Villanueva Torrijo, Soumya Yandrapalli

This work presents the study of suspended Y-cut Lithium Niobate shear bulk acoustic resonators for wide band filter applications in the frequency range of 3.5-4.5GHz. The resonators consist of a Lithium Niobate film with Aluminum top interdigitated electro ...

Institute of Electrical and Electronics Engineers2023

Cavity-Mediated Coupling of Terahertz Antiferromagnetic Resonators

Jean-Philippe Ansermet, Marcin Bialek

Coupling of space-separated resonators is interesting for quantum and communication technologies. In this work, we show that antiferromagnetic resonance in separated parallel-plane slabs of hematite (alpha-Fe2O3) couple cooperatively to terahertz electroma ...

American Physical Society (APS)2023

Nanomechanical resonators with low dissipation for quantum optomechanics

Alberto Beccari

Fields of technology as diverse as microwave filter construction, characterization of material interfaces with atomic precision, and detection of gravitational waves from astronomical sources employ mechanical resonators at their core. The utility of mecha ...

EPFL2023

Millimeter-wave to near-terahertz sensors based on reversible insulator-to-metal transition in VO2

Mihai Adrian Ionescu, Teodor Rosca, Fatemeh Qaderi Rahaqi

In the quest for low power bio-inspired spiking sensors, functional oxides like vanadium dioxide are expected to enable future energy efficient sensing. Here, we report uncooled millimeter-wave spiking detectors based on the sensitivity of insulator-to-met ...

SPRINGERNATURE2023

Single Chip Dynamic Nuclear Polarization Microsystems

Nergiz Sahin Solmaz

Nuclear magnetic resonance (NMR) methods are powerful tools employed in many fields, including physics, chemistry, material science, biology, and medicine. The use of NMR methodologies in an even wider range of applications is often hindered by the relativ ...

EPFL2023

Methods for Calibrating the Electrochemical Quartz Crystal Microbalance: Frequency to Mass and Compensation for Viscous Load

Stefano Mischler, Anna Neus Igual Muñoz

The main output from an Electrochemical Quartz Crystal Microbalance is a frequency shift. This note describes how to separate the mass- and viscous load contributions to this shift by a calibration procedure. The mass calibration is made by electroplating ...

MDPI2023

Fab-to-fab and run-to-run variability in 130 nm and 65 nm CMOS technologies exposed to ultra-high TID

Gennaro Termo, Jean-Michel Sallese, Adil Koukab

The discovery of a large fab-to-fab variability in the TID response of the CMOS technologies used in the design of ASICs for the particle detectors of the HL-LHC triggered a monitoring effort to verify the consistency of the CMOS production process over ti ...

IOP Publishing Ltd2023

Analysis and Design for Medium Voltage Dual Active Bridge Converter Based on Series-Connected SiC MOSFETs

Chengmin Li

In this article, a series-connected SiC MOSFETs-based medium voltage (MV) dual active bridge (DAB) converter featuring a lowvoltage difference amongdevices and high efficiency is proposed. In the developed DAB converter, the zero voltage switching-on chara ...

Ieee-Inst Electrical Electronics Engineers Inc2023

LiNiO Junction Gate for High-performance Enhancement-mode GaN Power Transistor

Taifang Wang

GaN metal-oxide-semiconductor high electron mobility transistors (MOS)HEMTs) offer outstanding properties for next-generation power electronics devices. The high conductivity, high voltage blocking capability, high operation frequency, and device-level int ...

EPFL2022

500 MHz high resolution proximity sensors with fully integrated digital counter

Giovanni Boero, Nergiz Sahin Solmaz, Reza Farsi

We report on the design and characterization of two inductive proximity sensors based on LC oscillators operating at 500 MHz. The distance from the target is obtained by measuring the oscillation frequency variation. Both sensors contain an off-chip LC res ...

ELSEVIER SCI LTD2023

A Cryogenic Broadband Sub-1-dB NF CMOS Low Noise Amplifier for Quantum Applications

Edoardo Charbon, Andrea Ruffino, Yatao Peng

A cryogenic broadband low noise amplifier (LNA) for quantum applications based on a standard 40-nm CMOS technology is reported. The LNA specifications are derived from the readout of semiconductor quantum bits at 4.2 K, whose quantum information signals ar ...

2021

Adaptive Body Biasing in Strong Body Factor Technologies

Thomas Christoph Müller

With the advent of intelligent sensor nodes in everyday life, low power aspects of system design become more and more important. Adaptive body biasing is a promising methodology to achieve dynamic adaptation of the tradeoff between performance and energy b ...

EPFL2021

Development of Lamb wave resonators in thin film X-cut lithium niobate

Muhammad Faizan

Microelectromechanical systems (MEMS) is among the most revolutionary technologies of 21st century, with the applications ranging from industrial systems to consumer electronics. Using MEMS in battery-powered wireless devices has long been seen as the evol ...

EPFL2021

Optimization of Edge Profile for Improved Anti-Resonance Quality Factor in Lithium Niobate SH0 Resonators

Luis Guillermo Villanueva Torrijo, Silvan Stettler

Thin-film lithium niobate (LNO) has been identified as a promising material platform for enabling high electromechanical coupling and low-loss piezoelectric resonators for filtering applications. In this work, the design and fabrication of fundamental shea ...

IEEE2022

Enhancement-mode Multi-channel AlGaN/GaN Transistors with LiNiO Junction Tri-Gate

Elison de Nazareth Matioli, Luca Nela, Taifang Wang

Multi-channel GaN power device, consisting of stacking multiple two-dimensional-electron-gas (2DEG) channels, has been demonstrated to achieve unprecedented on-state performance while maintaining high breakdown voltage (VBR). However, the large carrier den ...

Institute of Electrical and Electronics Engineers2022