Publications associées à Inductive Supply for Highly Insulated Device

Publications associées (27)

Gate Driver Power Supply With Low-Capacitance-Coupling and Constant Output Voltage for Medium-Voltage SiC MOSFETs

With the development of wide band-gap devices, Silicon Carbide (SiC) semiconductor devices in 10 kV–15 kV voltage class offer potentials in medium-voltage (MV) systems. To ensure reliable operation of these MV SiC devices, gate driver power supplies must m ...

2025

Design and First Tests of the Trapped Electrons Experiment T-REX

Stefano Alberti, Damien Fasel, Joaquim Loizu Cisquella, Jérémy Genoud, Francesco Romano, Steve Couturier, Marc Noël, Severino Antonioni

Gyrotrons are essential for electron cyclotron resonance heating (ECRH) in fusion reactors, making efficient operation crucial for advancing fusion energy. Past experiments revealed instability issues due to trapped electrons in the magnetron injection gun ...

AIP Publishing2024

Analysis and Design for Medium Voltage Dual Active Bridge Converter Based on Series-Connected SiC MOSFETs

Chengmin Li

In this article, a series-connected SiC MOSFETs-based medium voltage (MV) dual active bridge (DAB) converter featuring a lowvoltage difference amongdevices and high efficiency is proposed. In the developed DAB converter, the zero voltage switching-on chara ...

Ieee-Inst Electrical Electronics Engineers Inc2023

Integrated electronics for time-of-flight positron emission tomography photodetectors

Andrada Alexandra Muntean

Positron emission tomography is a nuclear imaging technique well known for its use in oncology for cancer diagnosis and staging. A PET scanner is a complex machine which comprises photodetectors placed in a ring configuration that detect gamma photons gen ...

EPFL2023

Enhancement-mode Multi-channel AlGaN/GaN Transistors with LiNiO Junction Tri-Gate

Elison de Nazareth Matioli, Luca Nela, Taifang Wang

Multi-channel GaN power device, consisting of stacking multiple two-dimensional-electron-gas (2DEG) channels, has been demonstrated to achieve unprecedented on-state performance while maintaining high breakdown voltage (VBR). However, the large carrier den ...

Institute of Electrical and Electronics Engineers2022

High frequency IGCT operation for DC transformer

Gabriele Ulissi

In spite of the dominance of ac technology for the vast majority of power transmission and distribution since the late 19th century, the past decades have seen an increase in use of dc electrical power. In particular, this has been the case both in high vo ...

EPFL2022

Oligothiophene Phosphonic Acids for Self-Assembled Monolayer Field-Effect Transistors

Thomas Schmaltz

Semiconducting self-assembled monolayers (SAMs) represent highly relevant components for the fabrication of organic thin-film electronics because they enable the precise formation of active it-conjugates in terms of orientation and layer thickness. In this ...

AMER CHEMICAL SOC2021

Prediction of optically-triggered amplification in phototransistor with SPICE circuit simulators

Jean-Michel Sallese, Chiara Rossi

Modeling of optoelectronic devices involves long and complex numerical simulations, usually performed with TCAD tools. Numerical simulations provide accurate results for a single device but are not feasible when dealing with a full circuit comprising sever ...

SPIE-INT SOC OPTICAL ENGINEERING2020

Electronic transport across quantum dots in graphene nanoribbons: Toward built-in gap-tunable metal-semiconductor-metal heterojunctions

Oleg Yazyev, Michele Pizzochero, Kristians Cernevics

The success of all-graphene electronics is severely hindered by the challenging realization and subsequent integration of semiconducting channels and metallic contacts. Here, we comprehensively investigate the electronic transport across width-modulated he ...

AMER PHYSICAL SOC2020

High-Voltage Normally-off Recessed Tri-Gate GaN Power MOSFETs With Low on-Resistance

Elison de Nazareth Matioli, Jun Ma, Luca Nela, Catherine Erine, Minghua Zhu

In this letter, we present normally-off GaN-on-Si MOSFETs based on the combination of tri-gate with a short barrier recess to yield a large positive threshold voltage (VTH) while maintaining a low specific on resistance (R ON,SP ) and high current density ...

Institute of Electrical and Electronics Engineers2019

Effect of hysteretic and non-hysteretic negative capacitance on tunnel FETs DC performance

Mihai Adrian Ionescu, Farzan Jazaeri, Igor Stolichnov, Ali Saeidi

This work experimentally demonstrates that the negative capacitance effect can be used to significantly improve the key figures of merit of tunnel field effect transistor (FET) switches. In the proposed approach, a matching condition is fulfilled between a ...

2018

Genuinely Ferroelectric Sub-1-Volt-Switchable Nanodomains in HfxZr(1-x)O2 Ultrathin Capacitors

Mihai Adrian Ionescu, Igor Stolichnov, Enrico Colla, Matteo Cavalieri

The new class of fully silicon-compatible hafnia-based ferroelectrics with high switchable polarization and good endurance and thickness scalability shows a strong promise for new generations of logic and memory devices. Among other factors, their competit ...

2018

Identification of Semiconductor Defects through Constant-Fermi-Level Ab Initio Molecular Dynamics: Application to GaAs

Alfredo Pasquarello, Assil Bouzid

We show that constant-Fermi-level ab initio molecular dynamics can be used as a computer-based tool to reveal and control relevant defects in semiconductor materials. In this scheme, the Fermi level can be set at any position within the band gap during the ...

American Physical Society (APS)2017

Reconfigurable electronics based on metal-insulator transition : steep-slope switches and high frequency functions enabled by Vanadium Dioxide

Wolfgang Amadeus Vitale

The vast majority of disruptive innovations in science and technology has been originated from the discovery of a new material or the way its properties have been exploited to create novel devices and systems. New advanced nanomaterials will have a lasting ...

EPFL2016

Artificial Photosynthesis with Semiconductor-Liquid Junctions

Kevin Sivula, Nestor Guijarro Carratala, Florian Le Formal

Given the urgent need to develop a sustainable, carbon neutral energy storage system on a global scale, intense efforts are currently underway to advance the field of artificial photosynthesis: i.e. solar fuel engineering. In this review we give an overvie ...

Schweizerische Chemische Gesellschaft2015

Computational Study on the Electrical Behavior of Silicon Nanowire Memristive Biosensors

Giovanni De Micheli, Sandro Carrara, Ioulia Tzouvadaki, Francesca Puppo

In this paper, a complete study is carried out investigating the relationship between the biosensing and the electrical characteristics of freestanding two-terminal Schottky-barrier silicon nanowires. This paper successfully reproduces computationally the ...

Institute of Electrical and Electronics Engineers2015

Microfluidic Scintillation Detectors for High Energy Physics

Pietro Maoddi

This thesis deals with the development and study of microfluidic scintillation detectors, a technology of recent introduction for the detection of high energy particles. Most of the interest for such devices comes from the use of a liquid scintillator, whi ...

EPFL2015

Top-Down Fabrication of Gate-All-Around Vertically-Stacked Silicon Nanowire FETs with Controllable Polarity

Giovanni De Micheli, Yusuf Leblebici, Pierre-Emmanuel Julien Marc Gaillardon, Davide Sacchetto, Jian Zhang, Michele De Marchi

Asthe currentMOSFET scaling trend is facing strong limitations, technologies exploiting novel degrees of freedom at physical and architecture level are promising candidates to enable the continuation of Moore's predictions. In this paper, we report on the ...

Institute of Electrical and Electronics Engineers2014

Substrate Current Modeling for high Temperature Smart Power BCD Technology

Fabrizio Lo Conte

The electronics industry is present nowadays in the most various applications. A new type of technology for integrated circuits named BCD has started to be developed and appeared from the mid 1980’s. This new technology allows integrating bipolar transisto ...

EPFL2012

K-band single-chip electron spin resonance detector

Jens Anders

We report on the design, fabrication, and characterization of an integrated detector for electron spin resonance spectroscopy operating at 27 GHz. The microsystem, consisting of an LC-oscillator and a frequency division module, is integrated onto a single ...

Academic Press Inc - Elsevier Science2012