Publications associées à Hopping and trapping mechanisms in organic field-effect transistors

Publications associées (39)

Plasma-irradiated hafnia ferroelectrics for high-performance flexible thin film transistors

Integrating unconventional HfO2-based ferroelectrics in thin film transistors (TFTs) has proven effective in enhancing performance by stabilizing negative capacitance (NC). This is achieved by incorporating the ferroelectric in series with a high-permittiv ...

2025

Gate Driver Power Supply With Low-Capacitance-Coupling and Constant Output Voltage for Medium-Voltage SiC MOSFETs

Rui Wang

With the development of wide band-gap devices, Silicon Carbide (SiC) semiconductor devices in 10 kV–15 kV voltage class offer potentials in medium-voltage (MV) systems. To ensure reliable operation of these MV SiC devices, gate driver power supplies must m ...

2025

Direct laser writing of electronically conductive microstructures within soft hydrogel substrates

Veronica Navello, Stéphanie Lacour, Esther Amstad, Outman Akouissi, Lorenzo Lucherini

Hydrogels have emerged as promising materials for bioelectronic interfaces due to their tissue-like properties and high-water content. However, conventional hydrogels often suffer from poor electrical conductivity and mechanical stability, limiting their p ...

2025

Towards Scalable Electronics: Synthetic 2D Materials for Large-Area 2D Circuit Integration

Zhenyu Wang

In the past decades, a significant increase of the transistor density on a chip has led to exponential growth in computational power driven by Moore's law. To overcome the bottleneck of traditional von-Neumann architecture in computational efficiency, effo ...

EPFL2024

Time-reversed electromagnetic fields in anisotropic media

Farhad Rachidi-Haeri, Elias Per Joachim Le Boudec

Electromagnetic time reversal is commonly used for field imaging and focusing. This Letter builds upon the concept of the time -reversal cavity, which constitutes the main theoretical framework of time reversal theory. We study the behavior of the fields u ...

Optica Publishing Group2024

Mechanism of Solid-State 1H Photochemically Induced Dynamic Nuclear Polarization in a Synthetic Donor-Chromophore-Acceptor at 0.3 T

David Lyndon Emsley, Federico De Biasi, Máté Visegrádi, Marcel Levien

1H photochemically induced dynamic nuclear polarization (photo-CIDNP) has recently emerged as a tool to enhance bulk 1H nuclear magnetic resonance (NMR) signals in solids at magnetic fields ranging from 0.3 to 21.1 T, using synthetic donor-chromophore-acce ...

2024

Active Voltage Balancing with Seamless Integration into Dual Gate Driver for Series Connection of SiC MOSFETs

Drazen Dujic, Rui Wang

The versatility of half-bridge configuration of silicon carbide (SiC) metal-oxide-semiconductor field-effect transistor (MOSFET) power module contributes to its widespread adoption, highlighting the popularity and significance of its corresponding dual gat ...

2024

Strain relaxation and multidentate anchoring in n-type perovskite transistors and logic circuits

Mohammad Khaja Nazeeruddin, Olga Syzgantseva

The engineering of tin halide perovskites has led to the development of p-type transistors with field-effect mobilities of over 70 cm2 V-1 s-1. However, due to their background hole doping, these perovskites are not suitable for n-type transistors. Ambipol ...

Nature Portfolio2024

Measuring electrical properties in semiconductor devices by pixelated STEM and off-axis electron holography (or convergent beams vs. plane waves)

Victor Carle Adrien Boureau

We demonstrate the use of both pixelated differential phase contrast (DPC) scanning transmission electron microscopy (STEM) and off-axis electron holography (EH) for the measurement of electric fields and assess the advantages and limitations of each techn ...

Pergamon-Elsevier Science Ltd2024

A Dual-Channel Gate Driver Design with Active Voltage Balancing Circuit for Series Connection of SiC MOSFETs

Drazen Dujic, Rui Wang

Dual-channel gate driver is commonly utilized in the industry for accommodating the widespread use of half-bridge power modules. As wide-bandgap devices become increasingly prevalent due to their superior switching characteristics compared with conventiona ...

2024

Silicon CMOS and InGaAs(P)/InP SPADs for NIR/SWIR detection

Utku Karaca

Applications demanding imaging at low-light conditions at near-infrared (NIR) and short-wave infrared (SWIR) wavelengths, such as quantum information science, biophotonics, space imaging, and light detection and ranging (LiDAR), have accelerated the develo ...

EPFL2024

Alignment of ND3 molecules in dc-electric fields

Andreas Osterwalder, Junwen Zou, Viet Le Duc

The control of movement and orientation of gas-phase molecules has become the focus of many research areas in molecular physics. Here, ND3 molecules are polarized in a segmented, curved electrostatic guide and adiabatically aligned inside a rotatable mass ...

Aip Publishing2024

Shortwave Infrared-Sensitive, Narrowband Organic Upconversion Devices with a Gain

Wei-Hsu Hu

Sensing and imaging of light in the shortwave infrared (SWIR) range is increasingly used in various fields, including bio-imaging, remote sensing, and semiconductor process control. SWIR-sensitive organic photodetectors (OPDs) are promising because organic ...

EPFL2024

Dual-shot approach for polarization retrieval through a scattering medium

Abhijit Roy

A dual-shot technique based on the field basis addition of two statistically independent speckle patterns is developed to recover an input polarization through a scattering layer. It is proposed theoretically, and demonstrated both numerically and experime ...

Iop Publishing Ltd2024

SPAD Developed in 55 nm Bipolar-CMOS-DMOS Technology Achieving Near 90% Peak PDP

Edoardo Charbon, Claudio Bruschini, Francesco Gramuglia, Myung Jae Lee, Ekin Kizilkan, Pouyan Keshavarzian, Won Yong Ha

We present a single-photon avalanche diode (SPAD) developed in 55 nm bipolar-CMOS-DMOS (BCD) technology, which achieves high photon detection probability (PDP) while its breakdown voltage is lower than 20 V. To enhance the PDP performance, the SPAD junctio ...

Ieee-Inst Electrical Electronics Engineers Inc2024

Infrared-reflective ultrathin-metal-film-based transparent electrode with ultralow optical loss for high efficiency in solar cells

Michael Graetzel, Georgios Kakavelakis

In this work we study in-depth the antireflection and filtering properties of ultrathin-metal-film-based transparent electrodes (MTEs) integrated in thin-film solar cells. Based on numerical optimization of the MTE design and the experimental characterizat ...

Nature Portfolio2024

Polarization-enhanced GaN Schottky barrier diodes: Ultra-thin InGaN for high breakdown voltage and low Ron

Elison de Nazareth Matioli, Alessandro Floriduz, Zheng Hao

In this work, we present a concept that leverages the strong piezoelectric polarization field in InGaN, which counteracts the external electric field at reverse bias. We show that despite the smaller InGaN band-gap and lower critical electric field, its st ...

2024

Drift-Diffusion Simulations of Charge Transport and Trap Dynamics in Organic Semiconductor Materials

Camilla Arietta Vael-Garn

Polymeric semiconductors have gained significant attention in the field of organic electronics due to their unique properties and potential applications. Through their ability to transport charge carriers and to absorb or emit light, they have attracted mu ...

EPFL2023

Organic electrochemical transistors printed from degradable materials as disposable biochemical sensors

Danick Briand, Nicolas Francis Fumeaux, Silvia Demuru, Claudio Pinto Almeida

Transient electronics hold promise in reducing electronic waste, especially in applications that require only a limited lifetime. While various degradable electronic and physical sensing devices have been proposed, there is growing interest in the developm ...

Nature Research2023

Orbital-Resolved DFT plus U for Molecules and Solids

Nicola Marzari, Iurii Timrov

We present an orbital-resolved extension of the Hubbard U correction to density-functional theory (DFT). Compared to the conventional shell-averaged approach, the prediction of energetic, electronic and structural properties is strongly improved, particula ...

Amer Chemical Soc2024