Publications de Mitali Banerjee

Chattez avec Graph Search

Posez n’importe quelle question sur les cours, conférences, exercices, recherches, actualités, etc. de l’EPFL ou essayez les exemples de questions ci-dessous.

AVERTISSEMENT : Le chatbot Graph n'est pas programmé pour fournir des réponses explicites ou catégoriques à vos questions. Il transforme plutôt vos questions en demandes API qui sont distribuées aux différents services informatiques officiellement administrés par l'EPFL. Son but est uniquement de collecter et de recommander des références pertinentes à des contenus que vous pouvez explorer pour vous aider à répondre à vos questions.

Strain is a commonly used tool to tune the optoelectronic properties of semiconductors. It is especially effective for transition metal dichalcogenides (TMDs), which can withstand extreme strain up to 10%. To date, localised strain fields have been applied ...

Twisted graphene based moiré heterostructures host a flat band at the magic angles where the kinetic energy of the charge carriers is quenched and interaction effects dominate. This results in emergent phases such as superconductors and correlated insulato ...

In this study, we investigate the impact of two-dimensional MoS2 coating on the optical properties of surface GaN/AlGaN quantum wells (QWs). A strong enhancement in GaN QW light emission is observed with monolayer-MoS2 coating, yielding luminescence intens ...

Moiré systems featuring flat electronic bands exhibit a vast landscape of emergent exotic quantum states, making them one of the resourceful platforms in condensed matter physics. Tuning these systems via twist angle and the electric field greatly enhances ...

Tungsten diselenide (WSe2) is a 2D semiconducting material, promising for novel optoelectronic and phononic applications. WSe2 has complex lattice dynamics and phonon structure. Numerous discrepancies in the literature exist regarding the interpretation an ...

Moiré superlattice in twisted bilayer graphene has been proven to be a versatile platform for exploring exotic quantum phases. Extensive investigations have been invoked focusing on the zero-magnetic-field phase diagram at the magic twist angle around $\th ...

Implementing topological insulators as elementary units in quantum technologies requires a comprehensive understanding of the dephasing mechanisms governing the surface carriers in these materials, which impose a practical limit to the applicability of the ...

Grayscale structured surfaces with nanometer-scale features are used in a growing number of applications in optics and fluidics. Thermal scanning probe lithography achieves a lateral resolution below 10 nm and a vertical resolution below 1 nm, but its maxi ...

The topological order of a quantum Hall state is mirrored by the gapless edge modes owing to bulk-edge correspondence. The state at the filling of ν = 5/2, predicted to host non-abelian anyons, supports a variety of edge modes (integer, fractional, neutral ...

Field-effect transistors (FETs) based on two-dimensional materials (2DMs) with atomically thin channels have emerged as a promising platform for beyond-silicon electronics. However, low carrier mobility in 2DM transistors driven by phonon scattering remain ...

Mitali Banerjee

Chattez avec Graph Search

Strain induced lifting of the charged exciton degeneracy in monolayer MoS2 on a GaAs nanomembrane

Large Tunable Kinetic Inductance in a Twisted Graphene Superconductor

GaN Surface Passivation by MoS2 Coating

Direct probing of energy gaps and bandwidth in gate-tunable flat band graphene systems

Unveiling the complex phonon nature and phonon cascades in 1L to 5L WSe2 using multiwavelength excitation Raman scattering

Strongly correlated Hofstadter subbands in minimally twisted bilayer graphene

Low-temperature saturation of phase coherence length in topological insulators

Combining thermal scanning probe lithography and dry etching for grayscale nanopattern amplification

Isolated ballistic non-abelian interface channel

Deterministic grayscale nanotopography to engineer mobilities in strained MoS2 FETs