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The integration of transition-metal dichalcogenides (TMDs) with non-planar substrates such as nanopillars provides a way to spatially modify the optical properties mainly through the localized strain. Similar studies to date have utilized insulating SiO2 n ...

Selective-area epitaxy provides a path toward high crystal quality, scalable, complex nanowire networks. These high-quality networks could be used in topological quantum computing as well as in ultrafast photodetection schemes. Control of the carrier densi ...

Large-scale patterning for vapor-liquid-solid growth of III-V nanowires is a challenge given the required feature size for patterning (45 to 60 nm holes). In fact, arrays are traditionally manufactured using electron-beam lithography,for which processing t ...

III-V semiconductors outperform Si in many optoelectronics applications due to their high carrier mobility, efficient light emission and absorption processes, and the possibility to engineer their band gap through alloying. However, complementing Si techno ...

The growth kinetics of vertical III−V nanowires (NWs) were clarified long ago. The increasing aspect ratio of NWs results in an increase in the surface area, which, in turn, enhances the material collection. The group III adatom diffusion from the NW sidew ...

Terahertz (THz) radiation will play a pivotal role in wireless communications, sensing, spectroscopy and imaging technologies in the decades to come. THz emitters and receivers should thus be simplified in their design and miniaturized to become a commodit ...

Strain is a commonly used tool to tune the optoelectronic properties of semiconductors. It is especially effective for transition metal dichalcogenides (TMDs), which can withstand extreme strain up to 10%. To date, localised strain fields have been applied ...

Selective area epitaxy (SAE) provides the path for scalable fabrication of semiconductor nanostructures in a device-compatible configuration. In the current paradigm, SAE is understood as localized epitaxy, and is modelled by combining planar and self-asse ...

We proposed and showed strongly orientation-controlled Forster resonance energy transfer (FRET) to highly anisotropic CdSe nanoplatelets (NPLs). For this purpose, we developed a liquidair interface self-assembly technique specific to depositing a complete ...

Selective area epitaxy is a promising approach to definenanowirenetworks for topological quantum computing. However, it is challengingto concurrently engineer nanowire morphology, for carrier confinement,and precision doping, to tune carrier density. We re ...

Selective area epitaxy (SAE), applied to semiconductor growth, allows tailored fabrication of intricate structures at the nanoscale with enhanced properties and functionalities. In the field of nanowires (NWs), it adds scalability by enabling the fabricati ...

Nanowire-based terahertz photoconductive receivers offer many advantages over the existing bulk-based receivers, such as the capability of measuring the full terahertz polarization state and integrating into micro/nano-systems. However, their detection per ...

Semiconductor nanowires (NWs) in horizontal configuration could provide a path for scalable NW-based devices. Bottom-up large-scale manufacturing of these nanostructures by selective area epitaxy (SAE) relies on precise nanopatterning of various shapes on ...

We outline the growth mechanismand shape evolution of GaAsnanoridges by selective area MOVPE with three well-identified, distinctstages of growth. ...

Journal Article Low Dimensional III-V and II-VI Semiconductors Get access Didem Dede, Didem Dede École Polytechnique Fédérale de Lausanne. Search for other works by this author on: Oxford Academic Google Scholar Nicholas Morgan, Nicholas Morgan École Polyt ...

Raw dataset and image files used for the publication ...

Accompanying dataset containing the raw data and analysis contained in the main publication. This comprises the fitted CL-SEM dataset, the CL-STEM dataset, the CL-SEM presented in the SI and the STEM-EDX linescans. ...

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Spatial Modulation of Vibrational and Luminescence Properties of Monolayer MoS & x2082; Using a GaAs Nanowire Array

Remote Doping of Scalable Nanowire Branches

GaAs nanowires on Si nanopillars: towards large scale, phase-engineered arrays

Nanoscale Mapping of Light Emission in Nanospade-Based InGaAs Quantum Wells Integrated on Si(100): Implications for Dual Light-Emitting Devices

Nucleation-Limited Kinetics of GaAs Nanostructures Grown by Selective Area Epitaxy: Implications for Shape Engineering in Optoelectronics Devices

Direct and integrating sampling in terahertz receivers from wafer-scalable InAs nanowires

Dataset for "GaAs nanowires on Si nanopillars: towards large scale, phase-engineered arrays"

Strain induced lifting of the charged exciton degeneracy in monolayer MoS2 on a GaAs nanomembrane

Selective area epitaxy of GaAs: the unintuitive role of feature size and pitch

Orientation-Controlled Nonradiative Energy Transfer to Colloidal Nanoplatelets: Engineering Dipole Orientation Factor

Trapping Layers Prevent Dopant Segregation and Enable Remote Doping of Templated Self-Assembled InGaAs Nanowires

Growth and Doping Mechanisms of III-V Nanostructures by Selective Area Epitaxy

Scalable Receivers Based on Horizontally-grown InAs Nanowires Promise All-fiber Terahertz Spectrometer Systems

The implementation of thermal and UV nanoimprint lithography for selective area epitaxy

From Layer-by-Layer Growth to Nanoridge Formation: Selective Area Epitaxy of GaAs by MOVPE

Low Dimensional III-V and II-VI Semiconductors

Facet-driven formation of axial and radial In(Ga)As clusters in GaAs nanowires

Accompanying dataset to ACS Appl. Nano Mater. 2022, 5, 4, 5508–5515 : Nanoscale Mapping of Light Emission in Nanospade-Based InGaAs Quantum Wells Integrated on Si(100): Implications for Dual Light-Emitting Devices