Alberto Ferraris, Edoardo Charbon, Kirsten Emilie Moselund, Hung-Chi Han
In this work we demonstrate cryogenic InxGa1-xAs/InP HEMTs with highly scaled gate footprints, down to 380 × 40 nm2 for a single gate finger, and investigate the impact of footprint scaling on device performance. The 80% In channel devices show fT=622 GHz ...
Institute of Electrical and Electronics Engineers Inc.2025
