The work presents the comprehensive design-oriented EKV model for FDSOI technologies, including the backgate effects and geometry dependence. Despite its simplicity, the model correctly captures not only the dependence of the threshold voltage versus the b ...
This study presents the first in depth characterization of deep cryogenic electrical behavior of a commercial 16 nm CMOS FinFET technology. This technology is well suited for a broad range of applications, including quantum computing, quantum sensing, and ...
In this paper, the influence of temperature and back-gate bias is experimentally investigated on 22 nm FDSOI CMOS process. Cryogenic DC characterization was carried out under various back-gate voltages, V back , from 2.95 K back to 300 K. An abrupt drop-of ...
