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Remco Franciscus Peter van Erp

Cette personne a quitté l’EPFL

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Publications associées (31)

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Seed Dibbling Method for the Grow of High-Quality Diamond on GaN

Elison de Nazareth Matioli, Remco Franciscus Peter van Erp, Riyaz Mohammed Abdul Khadar, Reza Soleiman Zadeh Ardebili, Alessandro Floriduz, Mehdi Naamoun

The integration of diamond and GaN has been highly pursued for thermal management purposes as well as combining their exceptional complementary properties for power electronics applications and novel semiconductor heterostructures. However, the growth of d ...

AMER CHEMICAL SOC2021

Embedded Microchannel Cooling for High Power-Density GaN-on-Si Power Integrated Circuits

Elison de Nazareth Matioli, Luca Nela, Remco Franciscus Peter van Erp, Reza Soleiman Zadeh Ardebili, Georgios Kampitsis

In this work, we demonstrate a new thermal management approach for direct cooling of GaN-on-Si power integrated circuits (ICs), in which the Si substrate functions as a microfluidic heat sink, turning Si into a cost-effective, high thermal performance subs ...

IEEE2020

Ultra-High Power Density Magnetic-less DC/DC Converter Utilizing GaN Transistors

Elison de Nazareth Matioli, Remco Franciscus Peter van Erp, Georgios Kampitsis

In this paper, a high step-up magnetic-less DC/DC nX converter is designed and experimentally evaluated. GaN transistors are applied in a nX converter topology, yielding ultrahigh power density and high conversion efficiency. The absence of magnetic materi ...

IEEE2019

Parallel PV Configuration with Magnetic-Free Switched Capacitor Module-Level Converters for Partial Shading Conditions

Elison de Nazareth Matioli, Remco Franciscus Peter van Erp, Georgios Kampitsis

In this paper, a module-level photovoltaic (PV) architecture in parallel configuration is introduced for maximum power extraction, under partial shading (PS) conditions. For the first time, a non-regulated switched capacitor (SC) nX converter is a used at ...

2021

Analysis of Output Capacitance Co-Energy and Discharge Losses in Hard-Switched FETs

Elison de Nazareth Matioli, Remco Franciscus Peter van Erp, Palliyage Srilak Nirmana Perera, Reza Soleiman Zadeh Ardebili, Georgios Kampitsis

The important distinction between stored energy and co-energy components of the output capacitance of field-effect transistors (FETs) is not explicitly discussed in the literature, and hence, less understood in relation to the switching losses in power ele ...

IEEE2020

Switching losses in power devices: From dynamic on resistance to output capacitance hysteresis

Elison de Nazareth Matioli, Remco Franciscus Peter van Erp, Armin Jafari, Palliyage Srilak Nirmana Perera, Hongkeng Zhu

In this paper, we review some of the main methods to characterize on-state and off-state losses in wide-band-gap devices under switching conditions. In the off-state, we will discuss about losses related to charging and discharging the output capacitance i ...

IEEE2023

Efficient Microchannel Cooling of Multiple Power Devices with Compact Flow Distribution for High Power-Density Converters

Elison de Nazareth Matioli, Remco Franciscus Peter van Erp, Georgios Kampitsis

In this work, we describe a new approach for compact and energy-efficient cooling of converters where multiple miniaturized microfluidic cold-plates are attached to transistors providing local heat extraction. The high pressure drop associated with microch ...

2020

Optimized kW-Range Boost Converter Based on Impulse Rectification with 52 kW/l and 98.6% Efficiency

Elison de Nazareth Matioli, Armin Jafari, Remco Franciscus Peter van Erp

Maximizing the efficiency and power density of dc-dc converters demands parallel optimizations in design and control, especially for variable-frequency converters operating over wide frequency ranges. This work presents the full-scale optimization of a kil ...

2021

Analysis of Large-Signal Output Capacitance of Transistors using Sawyer–Tower Circuit

Elison de Nazareth Matioli, Remco Franciscus Peter van Erp, Armin Jafari, Palliyage Srilak Nirmana Perera, Georgios Kampitsis

A detailed analysis on the Sawyer–Tower method used in the measurement of large-signal output capacitance (Co) of power transistors is presented, followed by important design recommendations to obtain accurate results. Key factors affecting the proper impl ...

2020

High-Performance Enhancement-Mode AlGaN/GaN Multi-Channel Power Transistors

Elison de Nazareth Matioli, Jun Ma, Luca Nela, Remco Franciscus Peter van Erp, Catherine Erine, Halil Kerim Yildirim

AlGaN/GaN devices have shown outstanding potential for power conversion applications. However, despite the recent progress, their performance is still far from what the material can offer in terms of on-resistance and breakdown voltage. To address this cha ...

IEEE2021

H-terminated polycrystalline diamond p-channel transistors on GaN-on-Silicon

Elison de Nazareth Matioli, Remco Franciscus Peter van Erp, Reza Soleiman Zadeh Ardebili, Riyaz Mohammed Abdul Khadar, Mehdi Naamoun

In many semiconductor technologies, including GaN, the lack of p-channel devices is a major obstacle for complementary operations. Here, we demonstrate high-performance polycrystalline diamond p-channel transistors on GaN-on-Si. Following the optimization ...

Institute of Electrical and Electronics Engineers2019

High-Accuracy Calibration-Free Calorimeter for the Measurement of Low Power Losses

Elison de Nazareth Matioli, Remco Franciscus Peter van Erp, Armin Jafari, Mohammad Samizadeh Nikooytabalvandani, Reza Soleiman Zadeh Ardebili, Enea Figini

Wide-band-gap technologies enable ultra-high efficiencies in high-frequency power conversion. However, inadequate accuracies in electrical measurements could lead to spurious efficiency measurements, even above 100%. Furthermore, bandwidth limitations, par ...

2020

Mixed Simulation-Experimental Optimization of a Modular Multilevel Switched Capacitors Converter Cell

Elison de Nazareth Matioli, Remco Franciscus Peter van Erp, Palliyage Srilak Nirmana Perera, Georgios Kampitsis

This work presents a mixed simulation experimental method for efficiency optimization of a modular multilevel switched capacitor DC-DC converter. The results show that the optimal frequency deviates from the circuit's self-resonant frequency, commonly prop ...

IEEE2020

Bringing the Heat Sink Closer to the Heat: Evaluating Die-embedded Microchannel Cooling of GaN-on-Si Power Devices

Elison de Nazareth Matioli, Luca Nela, Remco Franciscus Peter van Erp, Palliyage Srilak Nirmana Perera, Georgios Kampitsis

With reducing transistor sizes and increasing levels of integration, extracting the heat from electronic devices is an ongoing challenge. Conventional indirect-cooling approaches are hindered by thermal interfaces, as well as heat spreading to larger areas ...

IEEE2020

Embedded Microchannel Cooling for Monolithically-integrated GaN Half-bridge ICs

Elison de Nazareth Matioli, Luca Nela, Remco Franciscus Peter van Erp, Palliyage Srilak Nirmana Perera

Efficient and compact power conversion is a key requirement to achieve sustainable electrification of our society. GaN-based power devices offer major benefits compared to their silicon counterparts in terms of efficiency and integration but suffer from se ...

IEEE2021

Kilowatt-range Picosecond Switching Based on Microplasma Devices

Elison de Nazareth Matioli, Remco Franciscus Peter van Erp, Armin Jafari, Mohammad Samizadeh Nikooytabalvandani

Plasma formation in micro- and nano-scales enables an ultrahigh-dv/dt picosecond switching in an integrated circuit form factor. Such on-chip plasma devices could provide a transformative approach to achieving high-power levels at very high frequencies, fa ...

Institute of Electrical and Electronics Engineers2021

Near-junction microfluidic cooling for high power-density GaN-on-Si electronics: A wafer, device, packaging, and system-level investigation

Remco Franciscus Peter van Erp

Electrification of the energy section, from generation to end-use, plays an essential role in reducing global CO2 emission. Innovations in power electronics are required to increase conversion efficiency and power density. Gallium nitride (GaN) transistors ...

EPFL2022

A manifold microchannel heat sink for ultra-high power density liquid-cooled converters

Elison de Nazareth Matioli, Remco Franciscus Peter van Erp, Georgios Kampitsis

Increase in heat fluxes as a result of the miniaturization of power electronics demands new thermal management solutions such as liquid cooling, because of its high heat extraction capabilities. This work describes a new silicon-based heat sink that takes ...

IEEE2019

Co-designing electronics with microfluidics for more sustainable cooling

Elison de Nazareth Matioli, Luca Nela, Remco Franciscus Peter van Erp, Reza Soleiman Zadeh Ardebili, Georgios Kampitsis

Thermal management is one of the main challenges for the future of electronics1,2,3,4,5. With the ever-increasing rate of data generation and communication, as well as the constant push to reduce the size and costs of industrial converter systems, the powe ...

NATURE RESEARCH2020

Near-junction heat spreaders for hot spot thermal management of high power density electronic devices

Elison de Nazareth Matioli, Remco Franciscus Peter van Erp, Riyaz Mohammed Abdul Khadar, Reza Soleiman Zadeh Ardebili, Mehdi Naamoun

Many high power (opto-) electronic devices such as transistors, diodes, and lasers suffer from significant hot spot temperature rises due to the high heat fluxes generated in their active area, which limits their performance, reliability, and lifetime. Emp ...

2019