Publications de Ekin Kizilkan | EPFL Graph Search

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In this article, we present 10 mu m diameter SPADs fabricated in 110 nm CIS technology based on an N (+) /HVPW junction, with enhanced sensitivity at short wavelengths. To reduce tunneling noise due to the highly-doped layers in the process, a doping compe ...

This work presents a novel InGaAs/InP SPAD structure fabricated using a selective area growth (SAG) method. The surface topography of the selectively grown film deposited within the 70 mu m diffusion apertures is used to engineer the Zn diffusion profile t ...

We present a single-photon avalanche diode (SPAD) developed in 55 nm bipolar-CMOS-DMOS (BCD) technology, which achieves high photon detection probability (PDP) while its breakdown voltage is lower than 20 V. To enhance the PDP performance, the SPAD junctio ...

Designing SPADs with high sensitivity in a wide wavelength range is crucial since the applications utilizing SPAD-based sensors target different parts of the spectrum. Here, we introduce a novel technique to achieve a wider sensitivity spectrum through the ...

The radiation hardness of 180 nm complementary metal-oxide-semiconductor (CMOS) and 55 nm bipolar-CMOS-double-diffused MOS single-photon avalanche diodes (SPADs) is studied using 10 MeV and 100 MeV protons up to a displacement damage dose of 1 PeV/g. It is ...

We present a simulation method to estimate the dark count rate (DCR), photon detection probability (PDP), and dark current of InGaAs/InP single-photon avalanche diodes (SPADs) from 225K to 300K. All simulations are performed completely in TCAD and match we ...

Low-level light detection with high spatial and timing accuracy is a growing area of interest by virtue of applications such as light detection and ranging (LiDAR), biomedical imaging, time-resolved Raman spectroscopy, and quantum applications. Single-phot ...

A near-infrared sensitivity enhanced substrate non-isolated silicon single-photon avalanche diode is disclosed, comprising a p-well layer (101), a high-voltage n-well (102), the p-well layer and the high- voltage n-well layer positioned against each other ...

Single-photon avalanche diodes (SPADs), also referred to as Geiger-mode avalanche photodiodes, are primarily utilized in photon detection and counting. In this work, we present a measurement of the time-of-flight of minimum ionizing particles with outstand ...

The fabrication of the first CMOS single-photon avalanche diodes (SPADs) back in 2003 paved the way to a range of photodetection applications based on single-photon detection, photon counting, and photon time-stamping. In turn, it has become more and more ...

Single-photon avalanche diodes (SPADs) are direct photon-to-digital detectors that enable scalable arrays with Poisson-limited signal-to-noise ratio and picosecond timing resolution. However, SPAD detectors require a guard-ring structure to prevent lateral ...

CMOS Single-Photon Avalanche Diodes (SPADs) have broken into the mainstream by enabling the adoption of imaging, timing, and security technologies in a variety of applications within the consumer, medical and industrial domains. The continued scaling of te ...

Single-photon avalanche diode (SPAD) based sensors and systems enable a variety of applications in biomedical, automotive, consumer, and security domains. While several established standard technologies, which can facilitate the design of SPAD-based system ...

Ekin Kizilkan

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A 73% Peak PDP Single-Photon Avalanche Diode Implemented in 110 nm CIS Technology With Doping Compensation

Guard-Ring-Free InGaAs/InP Single-Photon Avalanche Diode Based on a Novel One-Step Zn-Diffusion Technique

SPAD Developed in 55 nm Bipolar-CMOS-DMOS Technology Achieving Near 90% Peak PDP

A new double multiplication region method to design high sensitivity and wide spectrum SPADs in standard CMOS technologies

Radiation Hardness Study of Single-Photon Avalanche Diode for Space and High Energy Physics Applications

Extended Temperature Modeling of InGaAs/InP SPADs

Advanced Silicon and SWIR Single-Photon Avalanche Diodes: Design, Simulation, and Characterization

Double multiplication region configuration for near-infrared sensitivity enhancement in silicon cmos single-photon avalanche diodes

Single-Photon Avalanche Diode for Scalable Particle Detection

Teaching single-photon detection metrology with off-the-shelf CMOS SPAD detectors

Optical-stack optimization for improved SPAD photon detection efficiency

Engineering Breakdown Probability Profile for PDP and DCR Optimization in a SPAD Fabricated in a Standard 55nm BCD Process

Low-noise high-dynamic-range single-photon avalanche diodes with integrated PQAR circuit in a standard 55 nm BCD