Santhanu Panikar Ramanandan

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The creation of a universal quantum computer that can solve complex problems beyond the reach of classical computers - the so-called "quantum supremacy" - is an open challenge. For this to become a reality, a large number of qubits should be integrated in ...

Predictive synthesis–structure–property relationships are at the core of materials design for novel applications. In this regard, correlations between the compositional stoichiometry variations and functional properties are essential for enhancing the perf ...

Barium zirconium sulfide (BaZrS3) is an earth-abundant and environmentally friendly chalcogenide perovskite with promising properties for various energy conversion applications. Recently, sulfurization of oxide precursors has been suggested as a viable sol ...

There is currently an emerging drive towards computational materials design and fabrication of predicted novel materials. One of the keys to developing appropriate fabrication methods is determination of the composition and phase. Here we explore the FeGe ...

Germanium (Ge) nanowires hold great promise as building blocks for hole spin-based quantum processors. Realizing this potential requires their direct integration onto silicon (Si) wafers. This work introduces V-groove-confined selective epitaxy to enable t ...

Raw data associated to the manuscript “Cubic, hexagonal and tetragonal FeGex phases (x = 1, 1.5, 2): Raman spectroscopy and magnetic properties", CrystEngComm 2021, XXXX, XXX, XXX-XXX There is currently an emerging drive to computational materials design ...

Zinc phosphide (Zn3P2) is a II–V compound semiconductor with promising photovoltaic and thermoelectric applications. Its complex structure is susceptible to facile defect formation, which plays a key role in further optimization of the material. Raman spec ...

Germanium nanowires could be the building blocks of hole-spin qubit quantum computers. Selective area epitaxy enables the direct integration of Ge nanowires on a silicon chip while controlling the device design, density, and scalability. For this to become ...

Semiconductor nanowires (NWs) in horizontal configuration could provide a path for scalable NW-based devices. Bottom-up large-scale manufacturing of these nanostructures by selective area epitaxy (SAE) relies on precise nanopatterning of various shapes on ...

This folder contains all the raw and processed data used for the manuscript titled: Gate-Tunable Hole Transport in In-Plane Ge Nanowires by V-Groove Confined Selective Epitaxy ...

Technological advancements are expanding continuously to affect more private, societal, and environmental aspects of our lives. This raises a serious need to equip those who lead and build such technologies with the skills that apply ethical principles to ...

Raw dataset and image files used for the publication ...

This document contains all the data and the details of the analysis used in the manuscript titled " Control of Ge island coalescence for the formation of nanowires on silicon." https://doi.org/10.1039/D3NH00573A ...

This document contains all the raw data files used for the manuscript. ...

Santhanu Panikar Ramanandan

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On-chip Germanium nanowires for hole spin qubits

Stoichiometry modulates the optoelectronic functionality of Zinc Phosphide (Zn3-xP2+x)

Understanding the growth mechanism of BaZrS3 chalcogenide perovskite thin films from sulfurized oxide precursors

Cubic, hexagonal and tetragonal FeGex phases (x = 1, 1.5, 2): Raman spectroscopy and magnetic properties

Gate-Tunable Hole Transport in In-Plane Ge Nanowires by V-Groove Confined Selective Epitaxy

Dataset for "Cubic, hexagonal and tetragonal FeGex phases (x = 1, 1.5, 2): Raman spectroscopy and magnetic properties"

Raman tensor of zinc-phosphide (Zn3P2): from polarization measurements to simulation of Raman spectra

Control of Ge island coalescence for the formation of nanowires on silicon

The implementation of thermal and UV nanoimprint lithography for selective area epitaxy

Data set for Gate-Tunable Hole Transport in In-Plane Ge Nanowires by V-Groove Confined Selective Epitaxy

PRACTISING ETHICS IN ENGINEERING AND SCIENCE EDUCATION

Facet-driven formation of axial and radial In(Ga)As clusters in GaAs nanowires

Data set for control of Ge island coalescence for the formation of nanowires on silicon

Coherent Hole Transport in Selective Area Grown Ge Nanowire Networks