Mihai Adrian Ionescu, Emanuele Andrea Casu, Nicolò Oliva, Matteo Cavalieri
We propose and experimentally demonstrate double-gated n-type WSe 2 FETs with excellent top gate high-k dielectric layer. Under back gate control, the devices behave as n-type enhancement transistors, with ON/OFF current ratios larger than 6 orders of magn ...
IEEE2018
