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Matteo Cavalieri

Cette personne a quitté l’EPFL

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Publications associées (21)

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Radio-Frequency Characteristics of Ge-doped Vanadium Dioxide Thin Films with Increased Transition Temperature

Mihai Adrian Ionescu, Andreas Schueler, Igor Stolichnov, Anna Krammer, Riyaz Mohammed Abdul Khadar, Matteo Cavalieri, Andrei Müller, Teodor Rosca, Fatemeh Qaderi Rahaqi

This work investigates and reports on the radio-frequency (RF) behavior in the frequency range of 5 – 35 GHz of germanium-doped (Ge-doped VO2) vanadium dioxide thin films, deposited on silicon substrates via sputtering and pulsed laser deposition (PLD) wit ...

2020

Genuinely Ferroelectric Sub-1-Volt-Switchable Nanodomains in HfxZr(1-x)O2 Ultrathin Capacitors

Mihai Adrian Ionescu, Igor Stolichnov, Enrico Colla, Matteo Cavalieri

The new class of fully silicon-compatible hafnia-based ferroelectrics with high switchable polarization and good endurance and thickness scalability shows a strong promise for new generations of logic and memory devices. Among other factors, their competit ...

2018

Exploring ferroelectricity in HfO2-based thin films by tackling application-relevant challenges

Matteo Cavalieri

Ferroelectric materials offer a broad range of application-relevant properties, including spontaneous polarization switchable by electric field. Archetypical representatives of this class of materials are perovskites, currently used in applications ranging ...

EPFL2021

Intrinsic switching in Si-doped HfO2: A study of Curie-Weiss law and its implications for negative capacitance field-effect transistor

Mihai Adrian Ionescu, Igor Stolichnov, Ali Saeidi, Matteo Cavalieri, Teodor Rosca, Carlotta Gastaldi, Sadegh Kamaei Bahmaei, Eamon Patrick O'Connor

HfO2-based ferroelectrics are considered a promising class of materials for logic and memory applications due to their CMOS compatibility and ferroelectric figures of merit. A steep-slope field-effect-transistor (FET) switch is a device for logic applicati ...

AMER INST PHYSICS2021

Gate energy efficiency and negative capacitance in ferroelectric 2D/2D TFET from cryogenic to high temperatures

Mihai Adrian Ionescu, Ali Saeidi, Matteo Cavalieri, Teodor Rosca, Carlotta Gastaldi, Sadegh Kamaei Bahmaei, Luca Capua

We report the fabrication process and performance characterization of a fully integrated ferroelectric gate stack in a WSe2/SnSe2 Tunnel FETs (TFETs). The energy behavior of the gate stack during charging and discharging, together with the energy loss of a ...

NATURE PORTFOLIO2021

Nanowire Tunnel FET with Simultaneously Reduced Subthermionic Subthreshold Swing and Off-Current due to Negative Capacitance and Voltage Pinning Effects

Mihai Adrian Ionescu, Igor Stolichnov, Ali Saeidi, Matteo Cavalieri, Teodor Rosca

Nanowire tunnel field-effect transistors (TFETs) have been proposed as the most advanced one-dimensional (1D) devices that break the thermionic 60 mV/decade of the subthreshold swing (SS) of metal oxide semiconductor field-effect transistors (MOSFETs) by u ...

AMER CHEMICAL SOC2020

Intrinsic or nucleation-driven switching: An insight from nanoscopic analysis of negative capacitance Hf1-xZrxO2-based structures

Mihai Adrian Ionescu, Igor Stolichnov, Matteo Cavalieri, Carlotta Gastaldi

HfO2-based ferroelectrics have dramatically changed the application perspectives of polarization-switching materials for information processing and storage. Their CMOS compatibility and preservation of high reversible polarization down to a few nanometer t ...

AMER INST PHYSICS2020

Transient Negative Capacitance of Silicon-doped HfO2 in MFMIS and MFIS structures: experimental insights for hysteresis-free steep slope NC FETs

Mihai Adrian Ionescu, Paul Muralt, Igor Stolichnov, Ali Saeidi, Matteo Cavalieri, Carlotta Gastaldi

In this paper, we experimentally explore the transient negative capacitance effect in ferroelectric high-k gate stacks using multi-ferroelectric domain Si-doped HfO2 with and without the metal plane, MFMIS (TiN/Si:HfO2/TiN/SiO2) and MFIS (TiN/Si:HfO2/SiO2) ...

IEEE2019

A Reconfigurable Inductor Based on Vanadium Dioxide Insulator-to-Metal Transition

Mihai Adrian Ionescu, Montserrat Fernandez-Bolanos Badia, Emanuele Andrea Casu, Matteo Cavalieri, Andrei Müller, Alessandro Fumarola

This letter introduces a reconfigurable planar square-coil-shaped inductor exploiting as the tuning mechanism the insulator-to-metal transition (IMT) of a vanadium dioxide (VO2) switch placed in the interwinding space in an unprecedented manner. The VO2 th ...

2018

Co-integrated Subthermionic 2D/2D WSe2/SnSe2 Vertical Tunnel FET and WSe2 MOSFET on same flake: towards a 2D/2D vdW Dual-Transport Steep Slope FET

Mihai Adrian Ionescu, Matteo Cavalieri, Nicolò Oliva, Luca Capua

In this work we report the fabrication, co-integration and resulting performance of 2D/2D van der Waals (vdW) Vertical p-type Tunnel FETs and p-MOSFETs in a WSe2/SnSe2 material system. We demonstrate the best ever reported combined performance in terms of ...

IEEE2019

WSe2/SnSe2 vdW heterojunction Tunnel FET with subthermionic characteristic and MOSFET co-integrated on same WSe2 flake

Mihai Adrian Ionescu, Matteo Cavalieri, Nicolò Oliva, Luca Capua

Two-dimensional/two-dimensional (2D/2D) heterojunctions form one of the most versatile technological solutions for building tunneling field effect transistors because of the sharp and potentially clean interfaces resulting from van der Waals assembly. Seve ...

NATURE PUBLISHING GROUP2020

Temperature dependence of reconfigurable bandstop filters using vanadium dioxide switches

Mihai Adrian Ionescu, Matteo Cavalieri, Andrei Müller

In this Letter, we report and investigate the temperature dependency of various radio frequency (RF) parameters for a fabricated reconfigurable bandstop filter with vanadium dioxide (VO2) switches measured up to 55 GHz. Here, the insulator-to-metal (ITM) a ...

AIP American Institute of Physics2020

Tunable RF phase shifters based on Vanadium Dioxide metal insulator transition

Mihai Adrian Ionescu, Josef Andreas Schuler, Montserrat Fernandez-Bolanos Badia, Wolfgang Amadeus Vitale, Anna Krammer, Emanuele Andrea Casu, Matteo Cavalieri, Andrei Müller, Nicolò Oliva, Alessandro Fumarola

2018

Double gate n-type WSe2 FETs with high-k top gate dielectric and enhanced electrostatic control

Mihai Adrian Ionescu, Emanuele Andrea Casu, Matteo Cavalieri, Nicolò Oliva

We propose and experimentally demonstrate double-gated n-type WSe 2 FETs with excellent top gate high-k dielectric layer. Under back gate control, the devices behave as n-type enhancement transistors, with ON/OFF current ratios larger than 6 orders of magn ...

IEEE2018

3D Smith charts scattering parameters frequency-dependent orientation analysis and complex-scalar multi-parameter characterization applied to Peano reconfigurable vanadium dioxide inductors

Mihai Adrian Ionescu, Andreas Schueler, Josef Andreas Schuler, Anna Krammer, Montserrat Fernandez-Bolanos Badia, Emanuele Andrea Casu, Matteo Cavalieri, Andrei Müller, Junrui Zhang

Recently, the field of Metal-Insulator-Transition (MIT) materials has emerged as an unconventional solution for novel energy efficient electronic functions, such as steep slope subthermionic switches, neuromorphic hardware, reconfigurable radiofrequency fu ...

Nature Research2019

Origin of Ferroelectric Phase in Undoped HfO2 Films Deposited by Sputtering

Igor Stolichnov, Matteo Cavalieri

Thin film metal-insulator-metal capacitors with undoped HfO2 as the insulator are fabricated by sputtering from ceramic targets and subsequently annealed. The influence of film thickness and annealing temperature is characterized by electrical and structur ...

WILEY2019

An Experimental Study on Mixed-Dimensional 1D-2D van der Waals Single-Walled Carbon Nanotube-WSe2 Hetero-Junction

Mihai Adrian Ionescu, Farzan Jazaeri, Ali Saeidi, Matteo Cavalieri, Nicolò Oliva, Sadegh Kamaei Bahmaei, Benjamin Paul Johanès Gabriel Lambert, Amin Rassekh

This experimental study investigates a novel multi-functional one dimensional-two dimensional (1D-2D) heterojunction made of two different band-gap semiconductors, i.e. single-walled carbon nanotube (SWCNT) and tungsten di-selenide (WSe2). The proposed ult ...

Institute of Electrical and Electronics Engineers2020

Experimental Investigation of Pulsed Laser Deposition of Ferroelectric Gd:HfO2 in a CMOS BEOL Compatible Process

Mihai Adrian Ionescu, Igor Stolichnov, Matteo Cavalieri, Carlotta Gastaldi, Eamon Patrick O'Connor

In this work, we report an experimental investigation of pulsed laser deposition (PLD) of thin Gd:HfO2 layers at 330 degrees C, which show ferroelectric behavior after annealing at 450 degrees C, compatible with complementary metal-oxide-semiconductor back ...

AMER CHEMICAL SOC2020

Negative Capacitance in HfO2 Gate Stack Structures With and Without Metal Interlayer

Mihai Adrian Ionescu, Igor Stolichnov, Ali Saeidi, Francesco Bellando, Matteo Cavalieri, Carlotta Gastaldi, Eamon Patrick O'Connor

In this work, we experimentally explore and compare FET gate stacks with and without an inner metal plane between a linear dielectric (SiO2) and a ferroelectric layer (Si-doped HfO2) operating in the negative capacitance (NC) regime. The use of nanosecond- ...

IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC2022

Ferroelectric Junctionless Double-Gate Silicon-On-Insulator FET as a Tripartite Synapse

Mihai Adrian Ionescu, Igor Stolichnov, Ali Saeidi, Matteo Cavalieri, Carlotta Gastaldi, Sadegh Kamaei Bahmaei

In this work, we report the concept and experimentally demonstrate the first tunable ferroelectric (Fe) junctionless (JL) transistor (Fe-JLFET), capable of emulating the functionality of biological tri-partite synapses, which is an artificial three-termina ...

Institute of Electrical and Electronics Engineers2023