Publications de Gordon Jens Callsen

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Since the 1960s, alloys are grouped into two classes, featuring bound states in the bandgap (I - GaP:N, ZnTe:O, etc.) or additional, non-discrete, band states (II - SiGe, GaAsP, InGaAs, etc.). Therefore, one can observe either a rich and informative zoo of ...

We present an overview on the growth and the optical properties of GaN quantum dots (QDs) embedded in planar AlN grown on the following three different types of substrates: single AlN crystal, AlN on sapphire, and AIN on Si(111). QD density control over th ...

Quantum dots (QDs) based on III-nitride semi-conductors are promising for single photon emission at noncryogenic temperatures due to their large exciton binding energies. Here, we demonstrate GaN QD single photon emitters operating at 300 K with g((2)) (0) ...

Y III-nitride quantum dots (QDs) are a promising system actively studied for their ability to maintain single photon emission up to room temperature. Here, we report on the evolution of the emission properties of self-assembled GaN/ AlN QDs for temperature ...

Full control over the density and emission properties of GaN quantum dots (QDs) should be feasible, provided that the growth proceeds in the Stranski-Krastanov (SK) growth mode. In this work, we derive the phase diagram for GaN QD formation on AlN by NH3-m ...

Recently, we suggested an unconventional approach (the so-called Internal-Field-Guarded-Active-Region Design "IFGARD") for the elimination of the quantum-confined Stark effect in polar semiconductor heterostructures. The IFGARD-based suppression of the Sta ...

Gordon Jens Callsen

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Probing alloy formation using different excitonic species: The particular case of InGaN

Room temperature single photon emission from planar GaN/AlN quantum dot samples grown by MBE

Toward Bright and Pure Single Photon Emitters at 300 K Based on GaN Quantum Dots on Silicon

Single photon emission and recombination dynamics in self-assembled GaN/AlN quantum dots

Density control of GaN quantum dots on AlN single crystal

Suppression of the quantum-confined Stark effect in polar nitride heterostructuresis