Publications de Wei Liu | EPFL Graph Search

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Since the seminal report about the first Candela- class-brightness InGaN blue light- emitting diodes (LEDs) by Shuji Nakamura et al. in 1994, III-nitride semiconductors have been one of the most important platforms for optoelectronic devices. The achieve ...

We study the influence of local inhomogeneities on carrier recombination dynamics in single InGaN/GaN core-shell microrods (MRs) by means of time-resolved microphotoluminescence (TRPL) at 10 K. At low carrier density (similar to 10(11) cm(-2)), the carrier ...

We study the impact of non-radiative defects on Auger recombination in c-plane InGaN/GaN single quantum wells (SQWs) in the efficiency droop regime using high injection time-resolved photoluminescence. The defect density in the SQW is controlled by tuning ...

We study the carrier-density-dependent recombination dynamics in m-plane InGaN/GaN multiple quantum wells in the presence of n-type background doping by time-resolved photoluminescence. Based on Fermi's golden rule and Saha's equation, we decompose the rad ...

Crystallographic point defects (PDs) can dramatically decrease the efficiency of optoelectronic semiconductor devices, many of which are based on quantum well (QW) heterostructures. However, spatially resolving individual nonradiative PDs buried in such QW ...

We investigate the dynamics of donor bound excitons (D degrees X-A) at T = 10K around an isolated single edge dislocation in homoepitaxial GaN, using a picosecond time-resolved cathodoluminescence (TR-CL) setup with high temporal and spatial resolutions. A ...

The origin of efficiency droop in state-of-the-art quality In GaN/GaN and GaN/AlGaN quantum wells (QWs) grown on various crystal planes is studied by means of time-resolved photoluminescence spectroscopy associated with a precise determination of the QW ca ...

Wei Liu

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Ultrafast carrier dynamics in III-nitride nanostructures and LED quantum efficiency

Impact of alloy disorder on Auger recombination in single InGaN/GaN core-shell microrods

Impact of defects on Auger recombination in c-plane InGaN/GaN single quantum well in the efficiency droop regime

Carrier-density-dependent recombination dynamics of excitons and electron-hole plasma in m-plane InGaN/GaN quantum wells

Imaging Nonradiative Point Defects Buried in Quantum Wells Using Cathodoluminescence

Exciton dynamics at a single dislocation in GaN probed by picosecond time-resolved cathodoluminescence

Enhancement of Auger recombination induced by carrier localization in InGaN/GaN quantum wells