Publications de Luca Francaviglia

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This thesis is dedicated to the engineering of the emission energy of quantum dots embedded in core-shell GaAs-AlGaAs nanowires. The goal is to redshift the quantum-dot emission energy in resonance with a gas of Rb atoms. Segregation processes on the nanow ...

Today, silicon is the most used material in photovoltaics, with the maximum conversion efficiency getting very close to the Shockley-Queisser limit for single-junction devices. Integrating silicon with higher band-gap ternary III-V absorbers is the path to ...

Nanoscale variations in the composition of an AlxGa1−xAs shell around a GaAs nanowire affect the nanowire functionality and can lead to the formation of localized quantum emitters. These composition fluctuations can be the consequence of variations of crys ...

We demonstrate the selective area growth of GaN-(Al,Ga)N core shell nanowire heterostructures directly on Si(111). Photoluminescence spectroscopy on as-grown nanowires reveals a strong blueshift of the GaN band gap from 3.40 to 3.64 eV at room temperature. ...

The growth of compound semiconductors on silicon has been widely sought after for decades, but reliable methods for defect-free combination of these materials have remained elusive. Recently, interconnected GaAs nanoscale membranes have been used as templa ...

The nature of the liquid-solid interface determines the characteristics of a variety of physical phenomena, including catalysis, electrochemistry, lubrication, and crystal growth. Most of the established models for crystal growth are based on macroscopic t ...

Quantum dots (QDs) formed in semiconductor nanowires (NWs) form a basis for studying interesting quantum phenomena and provide an exciting platform for various device applications, where in-depth understanding of the formation and electronic properties of ...

Two-dimensional semiconductors, in particular transition metal dichalcogenides and related heterostructures, have gained increasing interest as they constitute potential new building blocks for the next generation of electronic and optoelectronic applicati ...

Quantum dots (QDs) embedded in nanowires represent one of the most promising technologies for applications in quantum photonics. Self-assembled bottom-up fabrication is attractive to overcome the technological challenges involved in a top-down approach, bu ...

Cathodoluminescence (CL) and micro-photoluminescence spectroscopies are employed to investigate effects of structural defects on carrier recombination in GaNAsP nanowires (NWs) grown by molecular beam epitaxy on Si substrates. In the NWs with a low N conte ...

The large surface-to-volume ratio of GaN nanowires implicates sensitivity of the optical and electrical properties of the nanowires to their surroundings. The implementation of an (Al, Ga) N shell with a larger band gap around the GaN nanowire core is a pr ...

Obtaining light emission from silicon has been the holy grail of optoelectronics over the last few decades. One of the most common methods for obtaining light emission from silicon is to reduce it to a nanoscale structure, for example by producing porous s ...

We demonstrate the existence of two stable contact angles for the gallium droplet on top of self-assisted GaAs nanowires grown by MBE on patterned silicon substrates. Contact angle around 130 degrees fosters a continuous increase in the nanowire radius, wh ...

Luca Francaviglia

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Mechanisms shifting the emission energy of self-assembled quantum dots in nanowires

Dopant-Induced Modifications of GaxIn(1-x)P Nanowire-Based p-n Junctions Monolithically Integrated on Si(111)

Dataset for "Tuning adatom mobility and nanoscale segregation by twin formation and polytypism"

Strain-Induced Band Gap Engineering in Selectively Grown GaN-(Al,Ga)N Core-Shell Nanowire Heterostructures

GaAs nanoscale membranes: prospects for seamless integration of III-Vs on silicon

3D Ordering at the Liquid-Solid Polar Interface of Nanowires

Formation, electronic structure, and optical properties of self-assembled quantum-dot single-photon emitters in Ga(N,As,P) nanowires

Quantitative Nanoscale Absorption Mapping: A Novel Technique To Probe Optical Absorption of Two-Dimensional Materials

Quantum dots in the GaAs/AlxGa1-xAs core-shell nanowires: Statistical occurrence as a function of the shell thickness

Dataset for "Increasing N content in GaNAsP nanowires suppresses the impact of polytypism on luminescence"

Tuning adatom mobility and nanoscale segregation by twin formation and polytypism

Surface passivation and self-regulated shell growth in selective area-grown GaN-(Ale,Ga)N core-shell nanowires

Nanoporous silicon tubes: the role of geometry in nanostructure formation and application to light emitting diodes

Increasing N content in GaNAsP nanowires suppresses the impact of polytypism on luminescence

Bi-stability of contact angle and its role in tuning the morphology of self-assisted GaAs nanowires

Anisotropic-Strain-Induced Band Gap Engineering in Nanowire-Based Quantum Dots

Bistability of Contact Angle and Its Role in Achieving Quantum-Thin Self-Assisted GaAs nanowires