Publications de Gizem Nogay | EPFL Graph Search

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We present a detailed optimization of a hole selective rear contact for p-type crystalline silicon solar cells which relies on full-area processes and provides full-area passivation. The passivating hole-contact is based on a layer stack comprising a chemi ...

Today more than 90% of the global PV market is covered by c-Si solar cells which are limited by recombination losses at the metal-semiconductor interface. This recombination path can be avoided by separating the metal from the c-Si wafer by introducing a b ...

The use of passivating contacts compatible with typical homojunction thermal processes is one of the most promising approaches to realizing high-efficiency silicon solar cells. In this work, we investigate an alternative rear-passivating contact targeting ...

In devices with intrinsic amorphous silicon layer on a crystalline silicon substrate, the light absorbed in the amorphous layer can be weakly electronically coupled into the silicon base. Such carrier injection has previously been reported from measurement ...

Intrinsic amorphous silicon provides excellent surface passivation on crystalline silicon. It has previously been shown, that carriers that are photo generated in the amorphous silicon can be efficiently electronically injected into the crystalline silicon ...

We investigate hole-selective passivating contacts that consist of an interfacial layer of silicon oxide (SiOx) and a layer of boron-doped SiCx(p). The fabrication process of these contacts involves an annealing step at temperatures above 750 degrees C whi ...

Passivating contacts are indispensable for achieving high conversion efficiency in crystalline-silicon solar cells. Their realization and integration into a convenient process flow have become crucial research objectives. Here, we report an alternative pas ...

Recently, the charge carrier transport mechanism of passivating contacts, which feature an ultra-thin oxide layer, has been investigated by studying temperature-dependent current-voltage (I-V) characteristics. The measurement revealed that tunneling is the ...

In this study we present a boron-doped silicon carbide layers as a hole-selective contact which is compatible with short annealing time (typically < 1 minute) as the one used for firing of metal pastes. The application of such layers on symmetrically proce ...

Carrier collection in silicon heterojunction (SHJ) solar cells is usually achieved by doped amorphous silicon layers of a few nanometers, deposited at opposite sides of the crystalline silicon wafer. These layers are often defect-rich, resulting in modest ...

We present electron- and hole-selective passivating contacts based on wet-chemically grown interfacial SiOx and overlying in-situ doped silicon carbide (SiCx) deposited by plasma-enhanced chemical vapor deposition. After annealing at 850 degrees C, excelle ...

Silicon heterojunction solar cells typically use stacks of hydrogenated intrinsic/doped amorphous silicon layers as carrier selective contacts. However, the use of these layers may cause parasitic optical absorption losses and moderate fill factor (FF) val ...

The present invention relates to a solar cell comprising a heterojunction photoelectric device comprising, a front electrode layer, a back electrode layer comprising a metallic contact layer (300), a light-absorbing silicon layer (1 ) arranged between said ...

Tandem solar cells that feature a high-bandgap perovskite cell on top of a lower bandgap silicon cell have the potential to reach efficiencies > 30%. Here, we present a versatile hybrid deposition method that yields conformal perovskite cells directly on t ...

A method for rapid quantitative imaging of dopant distribution using secondary ion mass spectrometry (SIMS) is described. The method is based on SIMS imaging of the cross-section of a reference sample with a known concentration profile. It is demonstrated ...

Gizem Nogay

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Interplay of annealing temperature and doping in hole selective rear contacts based on silicon-rich silicon-carbide thin films

Full-Area Passivating Contacts with High and Low Thermal Budgets: Solutions for High Efficiency c-Si Solar Cells

Silicon-Rich Silicon Carbide Hole-Selective Rear Contacts for Crystalline-Silicon-Based Solar Cells

Measuring carrier injection from amorphous silicon into crystalline silicon using photoluminescence

Impact Impact of different capping layers on carrier injection efficiency between amorphous and crystalline silicon measured using photoluminescence

Nanoscale Study of the Hole-Selective Passivating Contacts with High Thermal Budget Using C-AFM Tomography

Carrier injection from amorphous silicon into crystalline silicon determined with photoluminescence

A passivating contact for silicon solar cells formed during a single firing thermal annealing

A Study on the Charge Carrier Transport of Passivating Contacts

A passivating contact concept compatible with a short thermal treatment

Strategies for Doped Nanocrystalline Silicon Integration in Silicon Heterojunction Solar Cells

Crystalline Silicon Solar Cells With Coannealed Electron- and Hole-Selective SiCx Passivating Contacts

Nanocrystalline Silicon Carrier Collectors for Silicon Heterojunction Solar Cells and Impact on Low-Temperature Device Characteristics

Silicon heterojunction solar cells and methods of manufacture

Hybrid sequential deposition process for fully textured perovskite/silicon tandem solar cells

A method for quantitative nanoscale imaging of dopant distributions using secondary ion mass spectrometry: an application example in silicon photovoltaics