Publications by Gizem Nogay | EPFL Graph Search

Related publications (22)

Interplay of annealing temperature and doping in hole selective rear contacts based on silicon-rich silicon-carbide thin films

Christophe Ballif, Philippe Wyss, Franz-Josef Haug, Matthieu Despeisse, Monica Morales Masis, Gizem Nogay, Philipp Friedrich Hermann Löper, Josua Andreas Stückelberger, Oscar Esteban Rucavado Leandro

We present a detailed optimization of a hole selective rear contact for p-type crystalline silicon solar cells which relies on full-area processes and provides full-area passivation. The passivating hole-contact is based on a layer stack comprising a chemi ...

Elsevier Science Bv2017

Full-Area Passivating Contacts with High and Low Thermal Budgets: Solutions for High Efficiency c-Si Solar Cells

Gizem Nogay

Today more than 90% of the global PV market is covered by c-Si solar cells which are limited by recombination losses at the metal-semiconductor interface. This recombination path can be avoided by separating the metal from the c-Si wafer by introducing a b ...

EPFL2018

Silicon-Rich Silicon Carbide Hole-Selective Rear Contacts for Crystalline-Silicon-Based Solar Cells

Christophe Ballif, Quentin Thomas Jeangros, Philippe Wyss, Xavier Niquille, Franz-Josef Haug, Matthieu Despeisse, Gizem Nogay, Philipp Friedrich Hermann Löper, Josua Andreas Stückelberger

The use of passivating contacts compatible with typical homojunction thermal processes is one of the most promising approaches to realizing high-efficiency silicon solar cells. In this work, we investigate an alternative rear-passivating contact targeting ...

2016

Measuring carrier injection from amorphous silicon into crystalline silicon using photoluminescence

Gizem Nogay, Philipp Friedrich Hermann Löper

In devices with intrinsic amorphous silicon layer on a crystalline silicon substrate, the light absorbed in the amorphous layer can be weakly electronically coupled into the silicon base. Such carrier injection has previously been reported from measurement ...

WILEY2018

Structural peculiarities and aging effect in hydrogenated a-Si prepared by inductively coupled plasma assisted chemical vapor deposition technique

Gizem Nogay

In this study, we report the morphological and structural properties of amorphous and nanocrystalline Si thin films deposited by inductively coupled plasma-assisted chemical vapor deposition (ICP-CVD) technique at low substrate temperatures using H-2 dilut ...

Pergamon-Elsevier Science Ltd2014

Passivating electron contact based on highly crystalline nanostructured silicon oxide layers for silicon solar cells

Christophe Ballif, Quentin Thomas Jeangros, Philippe Wyss, Xavier Niquille, Franz-Josef Haug, Matthieu Despeisse, Gizem Nogay, Martin Ledinsky, Philipp Friedrich Hermann Löper, Josua Andreas Stückelberger

We present a novel passivating contact structure based on a nanostructured silicon-based layer. Traditional poly-Si junctions feature excellent junction characteristics but their optical absorption induces current losses when applied to the solar cell fron ...

Elsevier Science Bv2016

Impact Impact of different capping layers on carrier injection efficiency between amorphous and crystalline silicon measured using photoluminescence

Gizem Nogay, Philipp Friedrich Hermann Löper, Andrea Ingenito

Intrinsic amorphous silicon provides excellent surface passivation on crystalline silicon. It has previously been shown, that carriers that are photo generated in the amorphous silicon can be efficiently electronically injected into the crystalline silicon ...

ELSEVIER SCIENCE BV2018

Nanoscale Study of the Hole-Selective Passivating Contacts with High Thermal Budget Using C-AFM Tomography

Christophe Ballif, Quentin Thomas Jeangros, Franz-Josef Haug, Gizem Nogay, Martin Ledinsky, Philipp Friedrich Hermann Löper

We investigate hole-selective passivating contacts that consist of an interfacial layer of silicon oxide (SiOx) and a layer of boron-doped SiCx(p). The fabrication process of these contacts involves an annealing step at temperatures above 750 degrees C whi ...

AMER CHEMICAL SOC2021

A Mixed-Phase SiOx Hole Selective Junction Compatible With High Temperatures Used in Industrial Solar Cell Manufacturing

Christophe Ballif, Quentin Thomas Jeangros, Philippe Wyss, Xavier Niquille, Franz-Josef Haug, Matthieu Despeisse, Mario Joe Lehmann, Iris Anita Mack, Gizem Nogay, Josua Andreas Stückelberger, Andrea Ingenito

We present a p-type passivating rear contact that complies with integration into standard solar cell manufacturing with phosphorus-diffused front side. Our contact structure consists of a thin SiOx tunneling layer grown by wet chemistry and a stack of laye ...

IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC2020

Phosphorous-Doped Silicon Carbide as Front-Side Full-Area Passivating Contact for Double-Side Contacted c-Si Solar Cells

Christophe Ballif, Philippe Wyss, Franz-Josef Haug, Matthieu Despeisse, Gizem Nogay, Philipp Friedrich Hermann Löper, Josua Andreas Stückelberger, Andrea Ingenito, Luca Gnocchi

We present an electron selective passivating contact based on a tunneling SiOx capped with a phosphorous doped siliconcarbideandpreparedwithahigh-temperaturethermalanneal. We investigate in detail the effects of the preparation conditions of theSiCx(n)(i.e ...

2018

Carrier injection from amorphous silicon into crystalline silicon determined with photoluminescence

Gizem Nogay, Philipp Friedrich Hermann Löper, Andrea Ingenito

Intrinsic amorphous silicon provides excellent surface passivation on crystalline silicon. It has previously been shown, that carriers that are photo generated in the amorphous silicon can be efficiently electronically injected into the crystalline silicon ...

IEEE2018

A passivating contact for silicon solar cells formed during a single firing thermal annealing

Christophe Ballif, Quentin Thomas Jeangros, Franz-Josef Haug, Matthieu Despeisse, Monica Morales Masis, Gizem Nogay, Philipp Friedrich Hermann Löper, Oscar Esteban Rucavado Leandro, Andrea Ingenito

Passivating contacts are indispensable for achieving high conversion efficiency in crystalline-silicon solar cells. Their realization and integration into a convenient process flow have become crucial research objectives. Here, we report an alternative pas ...

2018

A Study on the Charge Carrier Transport of Passivating Contacts

Gizem Nogay

Recently, the charge carrier transport mechanism of passivating contacts, which feature an ultra-thin oxide layer, has been investigated by studying temperature-dependent current-voltage (I-V) characteristics. The measurement revealed that tunneling is the ...

IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC2018

Overview of key results achieved in H2020 HighLite project helping to raise the EU PV industries' competitiveness

Antonin Faes, Gizem Nogay, Hugo James André Quest, Giuseppe Galbiati

The EU crystalline silicon (c-Si) PV manufacturing industry has faced strong foreign competition in the last decade. To strive in this competitive environment and differentiate itself from the competition, the EU c-Si PV manufacturing industry needs to (1) ...

WILEY2023

A passivating contact concept compatible with a short thermal treatment

Christophe Ballif, Philippe Wyss, Franz-Josef Haug, Matthieu Despeisse, Gizem Nogay, Josua Andreas Stückelberger, Andrea Ingenito

In this study we present a boron-doped silicon carbide layers as a hole-selective contact which is compatible with short annealing time (typically < 1 minute) as the one used for firing of metal pastes. The application of such layers on symmetrically proce ...

IEEE2018

Strategies for Doped Nanocrystalline Silicon Integration in Silicon Heterojunction Solar Cells

Christophe Ballif, Aïcha Hessler-Wyser, Antoine Descoeudres, Stefaan De Wolf, Jonas Geissbühler, Johannes Peter Seif, Gizem Nogay, Martin Ledinsky

Carrier collection in silicon heterojunction (SHJ) solar cells is usually achieved by doped amorphous silicon layers of a few nanometers, deposited at opposite sides of the crystalline silicon wafer. These layers are often defect-rich, resulting in modest ...

Ieee-Inst Electrical Electronics Engineers Inc2016

Crystalline Silicon Solar Cells With Coannealed Electron- and Hole-Selective SiCx Passivating Contacts

Christophe Ballif, Quentin Thomas Jeangros, Philippe Wyss, Franz-Josef Haug, Monica Morales Masis, Gizem Nogay, Philipp Friedrich Hermann Löper, Josua Andreas Stückelberger, Oscar Esteban Rucavado Leandro, Andrea Ingenito

We present electron- and hole-selective passivating contacts based on wet-chemically grown interfacial SiOx and overlying in-situ doped silicon carbide (SiCx) deposited by plasma-enhanced chemical vapor deposition. After annealing at 850 degrees C, excelle ...

2018

Complex Refractive Indices of Cesium–Formamidinium-Based Mixed-Halide Perovskites with Optical Band Gaps from 1.5 to 1.8 eV

Christophe Ballif, Sylvain Nicolay, Quentin Thomas Jeangros, Gabriel Christmann, Arnaud Walter, Jérémie Werner, Florent Sahli, Björn Niesen, Gizem Nogay, Philipp Friedrich Hermann Löper, Matthias Wolfgang Bräuninger, Peter Joseph Fiala, Chien-Jen Yang

Cesium-formamidinium-based mixed-halide perovskite materials with optical band gaps ranging from 1.5 to 1.8 eV are investigated by variable-angle spectroscopic ellipsometry. The determined complex refractive indices are shown to depend on the fabrication p ...

2018

Nanocrystalline Silicon Carrier Collectors for Silicon Heterojunction Solar Cells and Impact on Low-Temperature Device Characteristics

Christophe Ballif, Quentin Thomas Jeangros, Stefaan De Wolf, Nicolas Würsch, Franz-Josef Haug, Yannick Samuel Riesen, Johannes Peter Seif, Andrea Tomasi, Gizem Nogay

Silicon heterojunction solar cells typically use stacks of hydrogenated intrinsic/doped amorphous silicon layers as carrier selective contacts. However, the use of these layers may cause parasitic optical absorption losses and moderate fill factor (FF) val ...

Ieee-Inst Electrical Electronics Engineers Inc2016

Silicon heterojunction solar cells and methods of manufacture

Christophe Ballif, Gizem Nogay, Philipp Friedrich Hermann Löper, Andrea Ingenito

The present invention relates to a solar cell comprising a heterojunction photoelectric device comprising, a front electrode layer, a back electrode layer comprising a metallic contact layer (300), a light-absorbing silicon layer (1 ) arranged between said ...

2018