Adam Shmuel Teman

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Publications associées (30)

A Fast Modular Method for True Variation-Aware Separatrix Tracing in Nanoscaled SRAMs

Adam Shmuel Teman

As memory density continues to grow in modern systems, accurate analysis of SRAM stability is increasingly important to ensure high yields. Traditional static noise margin metrics fail to capture the dynamic characteristics of SRAM behavior, leading to exp ...

Institute of Electrical and Electronics Engineers2015

Mitigating the Impact of Faults in Unreliable Memories For Error-Resilient Applications

Andreas Peter Burg, Georgios Karakonstantis, Adam Shmuel Teman, Shrikanth Ganapathy

Inherently error-resilient applications in areas such as signal processing, machine learning and data analytics provide opportunities for relaxing reliability requirements, and thereby reducing the overheads incurred by conventional error correction scheme ...

2015

Energy versus Data Integrity Trade-Offs in Embedded High-Density Logic Compatible Dynamic Memories

Pascal Andreas Meinerzhagen, Andreas Peter Burg, Georgios Karakonstantis, Adam Shmuel Teman, Robert Giterman

Current variation aware design methodologies, tuned for worst-case scenarios, are becoming increasingly pessimistic from the perspective of power and performance. A good example of such pessimism is setting the refresh rate of DRAMs according to the worst- ...

2015

Approximate Computing With Unreliable Dynamic Memories

Andreas Peter Burg, Georgios Karakonstantis, Adam Shmuel Teman, Robert Giterman, Shrikanth Ganapathy

Embedded memories account for a large fraction of the overall silicon area and power consumption in modern SoC(s). While embedded memories are typically realized with SRAM, alternative solutions, such as embedded dynamic memories (eDRAM), can provide highe ...

2015

4T Gain-Cell with internal-feedback for ultra-low retention power at scaled CMOS nodes

Pascal Andreas Meinerzhagen, Andreas Peter Burg, Adam Shmuel Teman, Robert Giterman

Gain-Cell embedded DRAM (GC-eDRAM) has recently been recognized as a possible alternative to traditional SRAM. While GC-eDRAM inherently provides high-density, low-leakage, low-voltage, and 2-ported operation, its limited retention time requires periodic, ...

IEEE2014

Dynamic stability and noise margins of SRAM arrays in nanoscaled technologies

Adam Shmuel Teman

SRAM stability is one of the primary bottlenecks of current VLSI system design, and the unequivocal supply voltage scaling limiter. Static noise margin metrics have long been the de-facto standard for measuring this stability and estimating the yield of SR ...

IEEE2014

Replica Technique for Adaptive Refresh Timing of Gain-Cell-Embedded DRAM

Pascal Andreas Meinerzhagen, Andreas Peter Burg, Adam Shmuel Teman, Robert Giterman

Gain cells have recently been shown to be a viable alternative to static random access memory in low-power applications due to their low leakage currents and high density. The primary component of power consumption in these arrays is the dynamic power cons ...

Institute of Electrical and Electronics Engineers2014

Exploration of Sub-VT and Near-VT 2T Gain-Cell Memories for Ultra-Low Power Applications under Technology Scaling

Pascal Andreas Meinerzhagen, Andreas Peter Burg, Adam Shmuel Teman, Robert Giterman

Ultra-low power applications often require several kb of embedded memory and are typically operated at the lowest possible operating voltage (VDD) to minimize both dynamic and static power consumption. Embedded memories can easily dominate the overall sili ...

2013

Impact of body biasing on the retention time of gain-cell memories

Pascal Andreas Meinerzhagen, Andreas Peter Burg, Adam Shmuel Teman

Gain-cell-based embedded dynamic random-access memory (DRAMs) are a potential high-density alternative to mainstream static random-access memory (SRAM). However, the limited data retention time of these dynamic bitcells results in the need for power-consum ...

2013

A Sub-VT 2T Gain-Cell Memory for Biomedical Applications

Pascal Andreas Meinerzhagen, Andreas Peter Burg, Adam Shmuel Teman

All state-of-the-art subthreshold (sub-VT) memories are based on static bitcells, while the feasibility and limitations of dynamic bitcells operated in the sub-VT regime have not been studied yet. For the first time ever, we examine the sub-VT operation of ...

2012

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