Sonia Conesa Boj

Cette personne n’est plus à l’EPFL

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Publications associées (29)

Vertical "III-V" V-Shaped Nanomembranes Epitaxially Grown on a Patterned Si[001] Substrate and Their Enhanced Light Scattering

Anna Fontcuberta i Morral, Martin Heiss, Anna Dalmau Mallorquí, Sonia Conesa Boj, Eleonora Russo, Ludovit Pavel Zweifel

We report on a new form of III-IV compound semiconductor nanostructures growing epitaxially as vertical V-shaped nanomembranes on Si(001) and study their light-scattering properties. Precise position control of the InAs nanostructures in regular arrays is ...

American Chemical Society2012

Direct correlation of crystal structure and optical properties in wurtzite/zinc-blende GaAs nanowire heterostructures

Anna Fontcuberta i Morral, Martin Heiss, Emanuele Uccelli, Efthimios Kaxiras, Jun Ren, Sonia Conesa Boj

A method for the direct correlation at the nanoscale of structural and optical properties of single GaAs nanowires is reported. Nanowires consisting of 100% wurtzite and nanowires presenting zinc-blende/wurtzite polytypism are investigated by photoluminesc ...

2011

Defect Formation in Ga-Catalyzed Silicon Nanowires

Anna Fontcuberta i Morral, Li Wei, Sonia Conesa Boj, Père Roca i Cabarrocas

The synthesis of silicon nanowires by Ga-assisted plasma enhanced chemical vapor deposition (PECVD) has been recently demonstrated. In the present work, we study in detail the structural characteristics of the synthesized nanowires. High resolution transmi ...

American Chemical Society2010

Growth study of indium-catalyzed silicon nanowires by plasma enhanced chemical vapor deposition

Anna Fontcuberta i Morral, Libo Yu, Sonia Conesa Boj, Père Roca i Cabarrocas

Indium was used as a catalyst for the synthesis of silicon nanowires in a plasma enhanced chemical vapor deposition reactor. In order to foster the catalytic activity of indium, the indium droplets had to be exposed to a hydrogen plasma prior to nanowire g ...

2010

Structural and optical properties of high quality zinc-blende/wurtzite GaAs nanowire heterostructures

Anna Fontcuberta i Morral, Sonia Conesa Boj

The structural and optical properties of three different kinds of GaAs nanowires with 100% zinc-blende structure and with an average of 30% and 70% wurtzite are presented. A variety of shorter and longer segments of zinc-blende or wurtzite crystal phases a ...

2009

Single crystalline and core-shell indium-catalyzed germanium nanowires-a systematic thermal CVD growth study

Anna Fontcuberta i Morral, Martin Heiss, Sonia Conesa Boj

Germanium nanowires were synthesized using thermal chemical vapor deposition (CVD) and indium as a catalyst. The process parameter space for successful growth was studied. By optimizing the growth temperature and gas pressure, high aspect ratio germanium n ...

Institute of Physics2009

Long range epitaxial growth of prismatic heterostructures on the facets of catalyst-free GaAs nanowires

Anna Fontcuberta i Morral, Sonia Conesa Boj

Molecular beam epitaxy is used for the synthesis of catalyst-free GaAs nanowires and related quantum heterostructures. After growth of the nanowire GaAs core, the conditions are changed in situ towards standard MBE planar growth in order to obtain quantum ...

Royal Society of Chemistry2009

Gallium assisted plasma enhanced chemical vapor deposition of silicon nanowires

Anna Fontcuberta i Morral, Libo Yu, Sonia Conesa Boj, Père Roca i Cabarrocas

Silicon nanowires have been grown with gallium as catalyst by plasma enhanced chemical vapor deposition. The morphology and crystalline structure has been studied by electron microscopy and Raman spectroscopy as a function of growth temperature and catalys ...

Institute of Physics2009

Catalyst-free nanowires with axial InxGa1-xAs/GaAs heterostructures

Anna Fontcuberta i Morral, Martin Heiss, Sonia Conesa Boj

Self-catalyzed growth of axial InxGa1-xAs/GaAs heterostructures has been realized by molecular beam epitaxy. The growth of the wires is achieved from gallium/indium alloy droplets that are nucleated in situ. By variation of the In/Ga beam flux during the g ...

Institute of Physics2009

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