Sonia Conesa Boj

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Related publications (29)

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Catalyst-free nanowires with axial InxGa1-xAs/GaAs heterostructures

Anna Fontcuberta i Morral, Martin Heiss, Sonia Conesa Boj

Self-catalyzed growth of axial InxGa1-xAs/GaAs heterostructures has been realized by molecular beam epitaxy. The growth of the wires is achieved from gallium/indium alloy droplets that are nucleated in situ. By variation of the In/Ga beam flux during the g ...

Institute of Physics2009

Hybrid axial and radial Si-GaAs heterostructures in nanowires

Christophe Ballif, Anna Fontcuberta i Morral, Martin Heiss, Sylvain Dunand, Eleonora Russo, Sonia Conesa Boj, Daniel Rüffer

Hybrid structures are formed from materials of different families. Traditionally, group IV and III-V semiconductors have not been integrated together in the same device or application. In this work we present a new approach for obtaining Si-GaAs hybrid het ...

Royal Society of Chemistry2013

Gallium assisted plasma enhanced chemical vapor deposition of silicon nanowires

Anna Fontcuberta i Morral, Sonia Conesa Boj, Libo Yu

Silicon nanowires have been grown with gallium as catalyst by plasma enhanced chemical vapor deposition. The morphology and crystalline structure has been studied by electron microscopy and Raman spectroscopy as a function of growth temperature and catalys ...

Institute of Physics2009

Direct correlation of crystal structure and optical properties in wurtzite/zinc-blende GaAs nanowire heterostructures

Anna Fontcuberta i Morral, Martin Heiss, Sonia Conesa Boj, Emanuele Uccelli, Efthimios Kaxiras, Jun Ren

A method for the direct correlation at the nanoscale of structural and optical properties of single GaAs nanowires is reported. Nanowires consisting of 100% wurtzite and nanowires presenting zinc-blende/wurtzite polytypism are investigated by photoluminesc ...

2011

Growth mechanisms and process window for InAs V-shaped nanoscale membranes on Si[001]

Anna Fontcuberta i Morral, Gözde Tütüncüoglu, Martin Heiss, Eleonora Russo, Sonia Conesa Boj, Esther Alarcon Llado, Anna Dalmau Mallorquí

Organized growth of high aspect-ratio nanostructures such as membranes is interesting for opto-electronic and energy harvesting applications. Recently, we reported a new form of InAs nano-membranes grown on Si substrates with enhanced light scattering prop ...

Institute of Physics2013

Three-dimensional nanoscale study of Al segregation and quantum dot formation in GaAs/AlGaAs core-shell nanowires

Anna Fontcuberta i Morral, Martin Heiss, Eleonora Russo, Luca Francaviglia, Sonia Conesa Boj, Yannik Fontana

GaAs/Al-GaAs core-shell nanowires fabricated by molecular beam epitaxy contain quantum confining structures susceptible of producing narrow photoluminescence (PL) and single photons. The nanoscale chemical mapping of these structures is analyzed in 3D by a ...

American Institute of Physics2014

Vertical "III-V" V-Shaped Nanomembranes Epitaxially Grown on a Patterned Si[001] Substrate and Their Enhanced Light Scattering

Anna Fontcuberta i Morral, Martin Heiss, Sonia Conesa Boj, Anna Dalmau Mallorquí, Eleonora Russo

We report on a new form of III-IV compound semiconductor nanostructures growing epitaxially as vertical V-shaped nanomembranes on Si(001) and study their light-scattering properties. Precise position control of the InAs nanostructures in regular arrays is ...

American Chemical Society2012

Probing inhomogeneous composition in core/shell nanowires by Raman spectroscopy

Anna Fontcuberta i Morral, Gözde Tütüncüoglu, Martin Heiss, Federico Matteini, Eleonora Russo, Sonia Conesa Boj, Esther Alarcon Llado, Francesca Amaduzzi

Due to its non-destructive and its micro-spatial resolution, Raman spectroscopy is a powerful tool for a rapid structural and compositional characterization of nanoscale materials. Here, by combining the compositional dependence of the Raman peaks with the ...

American Institute of Physics2014

Raman spectroscopy of self-catalyzed GaAs1-xSbx nanowires grown on silicon

Anna Fontcuberta i Morral, Sonia Conesa Boj, Esther Alarcon Llado

Thanks to their wide band structure tunability, GaAs1-xSbx nanowires provide exciting perspectives in optoelectronic and energy harvesting applications. The control of composition and strain of these ternary alloys is crucial in the determination of their ...

Institute of Physics2013