Publications de Sonia Conesa Boj

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We investigate the emission properties of excitons in GaAs nanowires containing quantum disks formed by structural alternation between the zinc-blende and wurtzite phases, by means of temperature-dependent photoluminescence. At 10 K the emission from an en ...

Precise control over the electrical conductivity of semiconductor nanowires is a crucial prerequisite for implementation of these nanostructures into novel electronic and optoelectronic devices. Advances in our understanding of doping mechanisms in nanowir ...

Semiconductor nanowire arrays are reproducible and rational platforms for the realization of high performing designs of light emitting diodes and photovoltaic devices. In this paper we present an overview of the growth challenges of III-V nanowire arrays o ...

In this letter, we demonstrate the formation of unique Ga/GaAs/Si nanowire heterostructures, which were successfully implemented in nanoscale light-emitting devices with visible room temperature electroluminescence. Based on our recent approach for the int ...

Quantum dots embedded within nanowires represent one of the most promising technologies for applications in quantum photonics. Whereas the top-down fabrication of such structures remains a technological challenge, their bottom-up fabrication through self-a ...

Molecular beam epitaxy is used for the synthesis of catalyst-free GaAs nanowires and related quantum heterostructures. After growth of the nanowire GaAs core, the conditions are changed in situ towards standard MBE planar growth in order to obtain quantum ...

Indium was used as a catalyst for the synthesis of silicon nanowires in a plasma enhanced chemical vapor deposition reactor. In order to foster the catalytic activity of indium, the indium droplets had to be exposed to a hydrogen plasma prior to nanowire g ...

The ability to rationally tune the morphology of nanostructures is a fundamental milestone in nanoscale engineering. In particular, the possibility to switch between different shapes within the same material system represents a further step in the developm ...

The synthesis of silicon nanowires by Ga-assisted plasma enhanced chemical vapor deposition (PECVD) has been recently demonstrated. In the present work, we study in detail the structural characteristics of the synthesized nanowires. High resolution transmi ...

In order to realize many devices based on semiconductor nanowires, reliable doping is essential. For such devices, it is important that the electron mobility is not compromised by doping incorporation. Here, we show that core-shell GaAs/AlGaAs nanowires ca ...

We demonstrate that n-type black silicon can be passivated efficiently using Atomic Layer Deposited (ALD) Al2O3, reaching maximum surface recombination velocities below 7 cm/s. We show that the low surface recombination velocity results from a higher sensi ...

Semiconductor nanowires have increased the palette of possible heterostructures thanks to their more effective strain relaxation. Among these core shell heterostructures are much more sensitive to strain than axial Ones. It is now accepted that the formati ...

Germanium nanowires were synthesized using thermal chemical vapor deposition (CVD) and indium as a catalyst. The process parameter space for successful growth was studied. By optimizing the growth temperature and gas pressure, high aspect ratio germanium n ...

GaAs nanowire arrays on Silicon offer great perspectives in the :optoeleetronics and solar cell industry. To fulfill this potential, gold-free growth in predetermined positions should be achieved. Ga-assisted growth of GaAs nano-wires in the form of array ...

Crystal-phase engineering has emerged as a novel method of bandgap engineering, made feasible by the high surface-to-volume ratio of nanowires. There remains intense debate about the exact characteristics of the band structure of the novel crystal phases, ...

The structural and optical properties of three different kinds of GaAs nanowires with 100% zinc-blende structure and with an average of 30% and 70% wurtzite are presented. A variety of shorter and longer segments of zinc-blende or wurtzite crystal phases a ...

With the continued maturation of III-V nanowire research, expectations of material quality should be concomitantly raised. Ideally, III-V nanowires integrated on silicon should be entirely free of extended planar defects such as twins, stacking faults, or ...

Quantum dots (QDs) embedded in nanowires represent one of the most promising technologies for applications in quantum photonics. Self-assembled bottom-up fabrication is attractive to overcome the technological challenges involved in a top-down approach, bu ...

Self-catalyzed growth of axial InxGa1-xAs/GaAs heterostructures has been realized by molecular beam epitaxy. The growth of the wires is achieved from gallium/indium alloy droplets that are nucleated in situ. By variation of the In/Ga beam flux during the g ...

Silicon nanowires have been grown with gallium as catalyst by plasma enhanced chemical vapor deposition. The morphology and crystalline structure has been studied by electron microscopy and Raman spectroscopy as a function of growth temperature and catalys ...

Sonia Conesa Boj

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Exciton localization mechanisms in wurtzite/zinc-blende GaAs nanowires

Towards higher electron mobility in modulation doped GaAs/AlGaAs core shell nanowires

III-V nanowire arrays: growth and light interaction

Synthesis, Morphological, and Electro-optical Characterizations of Metal/Semiconductor Nanowire Heterostructures

Self-assembled quantum dots in a nanowire system for quantum photonics

Long range epitaxial growth of prismatic heterostructures on the facets of catalyst-free GaAs nanowires

Growth study of indium-catalyzed silicon nanowires by plasma enhanced chemical vapor deposition

Bottom-up engineering of InAs at the nanoscale: From V-shaped nanomembranes to nanowires

Defect Formation in Ga-Catalyzed Silicon Nanowires

Terahertz spectroscopy of modulation doped core-shell GaAs/AlGaAs nanowires

Analysis of the Atomic Layer Deposited Al2O3 field-effect passivation in black silicon

Cracking the Si Shell Growth in Hexagonal GaP-Si Core-Shell Nanowires

Single crystalline and core-shell indium-catalyzed germanium nanowires-a systematic thermal CVD growth study

High Yield of GaAs Nanowire Arrays on Si Mediated by the Pinning and Contact Angle of Ga

Three-Dimensional Magneto-Photoluminescence as a Probe of the Electronic Properties of Crystal-Phase Quantum Disks in GaAs Nanowires

Structural and optical properties of high quality zinc-blende/wurtzite GaAs nanowire heterostructures

Gold-Free Ternary III-V Antimonide Nanowire Arrays on Silicon: Twin-Free down to the First Bilayer

Quantum dots in the GaAs/AlxGa1-xAs core-shell nanowires: Statistical occurrence as a function of the shell thickness

Catalyst-free nanowires with axial InxGa1-xAs/GaAs heterostructures

Gallium assisted plasma enhanced chemical vapor deposition of silicon nanowires