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This thesis is dedicated to the growth and characterization of the optoelectronic properties of III-V semiconductor nanostructures namely nanowires and nanoscale membranes. III-V semiconductors possess promising intrinsic properties like direct band gap, h ...

III-V nanowires are candidate building blocks for next generation electronic and optoelectronic platforms. Low bandgap semiconductors such as In As and InSb are interesting because of their high electron mobility. Fine control of the structure, morphology, ...

Precise control over the electrical conductivity of semiconductor nanowires is a crucial prerequisite for implementation of these nanostructures into novel electronic and optoelectronic devices. Advances in our understanding of doping mechanisms in nanowir ...

Semiconductor nanowire arrays are reproducible and rational platforms for the realization of high performing designs of light emitting diodes and photovoltaic devices. In this paper we present an overview of the growth challenges of III-V nanowire arrays o ...

The growth of compound semiconductors on silicon has been widely sought after for decades, but reliable methods for defect-free combination of these materials have remained elusive. Recently, interconnected GaAs nanoscale membranes have been used as templa ...

The nature of the liquid-solid interface determines the characteristics of a variety of physical phenomena, including catalysis, electrochemistry, lubrication, and crystal growth. Most of the established models for crystal growth are based on macroscopic t ...

We successfully demonstrate the plasmonic coupling between metal nanoantennas and individual GaAs nanowires (NWs). In particular, by using dark-field scattering and second harmonic excitation spectroscopy in partnership with analytical and full-vector FDTD ...

We report on the use of photonic resonances in Raman spectroscopy on single nanowires for the enhancement of forbidden modes and the study of the interaction of phonons with free-carriers. This is achieved by suspending nanowire over a trench and detecting ...

We demonstrate the directional emission of individual GaAs nanowires by coupling this emission to Yagi-Uda optical antennas. In particular, we have replaced the resonant metallic feed element of the nanoantenna by an individual nanowire and measured with t ...

Ga-assisted growth of GaAs nanowires on silicon provides a path for integrating high-purity III-Vs on silicon. The nature of the oxide on the silicon surface has been shown to impact the overall possibility of nanowire growth and their orientation with the ...

Ga-catalyzed growth of GaAs nanowires on Si is a candidate process for achieving seamless III/V integration on IV. In this framework, the nature of silicon's surface oxide is known to have a strong influence on nanowire growth and orientation and therefore ...

We demonstrate nonlinear coupling between two orthogonal flexural modes of single as-grown GaAs nanowires. The resonant frequency of one mode can be shifted over many line widths by mechanically driving the other mode. We present time-domain measurements o ...

We investigate the magnetization reversal mechanism in an individual permalloy (Py) nanotube (NT) using a hybrid magnetometer consisting of a nanometer-scale SQUID (nanoSQUID) and a cantilever torque sensor. The Py NT is affixed to the tip of a Si cantilev ...

The structural and electronic properties of nonstoichiometric low-temperature grown GaAs nanowire shells have been investigated with scanning tunneling microscopy and spectroscopy, pump probe reflectivity, and cathodoluminescence measurements. The growth o ...

Semiconductor nanowires are promising building blocks for next generation photonics. Indirect proofs of large absorption cross sections have been reported in nanostructures with subwavelength diameters, an effect that is even more prominent in vertically s ...

Optical-pump terahertz-prohe (OPTP) spectroscopy is a powerful, non-contact tool for extracting the electrical conductivity within a material. In this work, we show how OPTP spectroscopy can he used to extract the temperature-dependent electron mobility an ...

GaAs nanowire arrays on Silicon offer great perspectives in the :optoeleetronics and solar cell industry. To fulfill this potential, gold-free growth in predetermined positions should be achieved. Ga-assisted growth of GaAs nano-wires in the form of array ...

Physical properties of surfaces are extremely important for initiation and nucleation of crystal growth, including nanowires. In recent years, fluctuations in surface characteristics have often been related to unreproducible growth of GaAs nanowires on Si ...

The photonic properties of nanowires advocate for their utilization in next generation solar cells. Compared to traditional devices, the electric scheme is transformed from a single into an ensemble of pn junctions connected in parallel. This new configura ...

Quantum dots (QDs) embedded in nanowires represent one of the most promising technologies for applications in quantum photonics. Self-assembled bottom-up fabrication is attractive to overcome the technological challenges involved in a top-down approach, bu ...

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The growth and optical properties of III-V nanostructures grown by Molecular Beam Epitaxy

From Twinning to Pure Zincblende Catalyst-Free InAs(Sb) Nanowires

Towards higher electron mobility in modulation doped GaAs/AlGaAs core shell nanowires

III-V nanowire arrays: growth and light interaction

GaAs nanoscale membranes: prospects for seamless integration of III-Vs on silicon

3D Ordering at the Liquid-Solid Polar Interface of Nanowires

Photonic-Plasmonic Coupling of GaAs Single Nanowires to Optical Nanoantennas

Tuning the response of non-allowed Raman modes in GaAs nanowires

Hybrid Semiconductor Nanowire-Metallic Yagi-Uda Antennas

Wetting of Ga on SiOx and Its Impact on GaAs Nanowire Growth

Impact of the Ga Droplet Wetting, Morphology, and Pinholes on the Orientation of GaAs Nanowires

Time-Resolved Nonlinear Coupling between Orthogonal Flexural Modes of a Pristine GaAs Nanowire

Magnetization reversal of an individual exchange-biased permalloy nanotube

Nonstoichiometric Low-Temperature Grown GaAs Nanowires

Visual Understanding of Light Absorption and Waveguiding in Standing Nanowires with 3D Fluorescence Confocal Microscopy

Unveiling Temperature-Dependent Scattering Mechanisms in Semiconductor Nanowires Using Optical-Pump Terahertz-Probe Spectroscopy

High Yield of GaAs Nanowire Arrays on Si Mediated by the Pinning and Contact Angle of Ga

Ga-assisted growth of GaAs nanowires on silicon, comparison of surface SiOx of different nature

Conductive-probe atomic force microscopy as a characterization tool for nanowire-based solar cells

Quantum dots in the GaAs/AlxGa1-xAs core-shell nanowires: Statistical occurrence as a function of the shell thickness