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Publications associées (22)

New Tunnel-FET Architecture with Enhanced Ion and Improved Miller Effect for Energy Efficient Switching

Mihai Adrian Ionescu, Luca De Michielis, Arnab Biswas, Cem Alper

Tunneling Field Effect Transistors (TFET) are promising devices to respond to the demanding requirements of future technology nodes. The benefits of the TFETs are linked to their sub-60mV/decade sub-threshold swing, a prerequisite for scaling the supply vo ...

2012

A Steep-Slope Transistor Combining Phase-Change and Band-to-Band-Tunneling to Achieve a sub-Unity Body Factor

Mihai Adrian Ionescu, Josef Andreas Schuler, Wolfgang Amadeus Vitale, Anna Krammer, Emanuele Andrea Casu, Arnab Biswas, Cem Alper, Teodor Rosca

Steep-slope transistors allow to scale down the supply voltage and the energy per computed bit of information as compared to conventional field-effect transistors (FETs), due to their sub-60 mV/decade subthreshold swing at room temperature. Currently pursu ...

Nature Research2017