Cem Alper

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Related publications (25)

Two Dimensional Quantum Mechanical Simulation of Low Dimensional Tunneling Devices

Mihai Adrian Ionescu, Livio Lattanzio, Cem Alper, José Luis Padilla de la Torre, Pierpaolo Palestri

We present a 2-D quantum mechanical simulation framework based on self-consistent solutions of Schrodinger-Poisson system, using the Finite Element Method. The quantum mechanical model includes direct as well as phonon-assisted transitions and it is applie ...

IEEE2014

Compact Modeling of Homojunction Tunnel FETs

Mihai Adrian Ionescu, Wladyslaw Grabinski, Luca De Michielis, Nilay Dagtekin, Arnab Biswas, Antonios Bazigos, Cem Alper

Aggressive scaling of the supply voltage reduces the energy needed for switching of standard CMOS devices. However, advanced CMOS technologies are facing two main problems that consequently lead to higher power consumption: the complexity of a further supp ...

IEEE2014

Quantum Mechanical Study of the Germanium Electron-Hole Bilayer Tunnel FET

Mihai Adrian Ionescu, Luca De Michielis, Livio Lattanzio, Luca Selmi, Cem Alper, Pierpaolo Palestri

The electron-hole bilayer tunnel field-effect transistor (EHBTFET) is an electronic switch that uses 2-D-2-D sub-band-to-sub-band tunneling (BTBT) between electron and hole inversion layers and shows significant subthermal swing over several decades of cur ...

Ieee-Inst Electrical Electronics Engineers Inc2013

New Tunnel-FET Architecture with Enhanced Ion and Improved Miller Effect for Energy Efficient Switching

Mihai Adrian Ionescu, Luca De Michielis, Arnab Biswas, Cem Alper

Tunneling Field Effect Transistors (TFET) are promising devices to respond to the demanding requirements of future technology nodes. The benefits of the TFETs are linked to their sub-60mV/decade sub-threshold swing, a prerequisite for scaling the supply vo ...

2012

Tunnel FET with non-uniform gate capacitance for improved device and circuit level performance

Mihai Adrian Ionescu, Luca De Michielis, Nilay Dagtekin, Livio Lattanzio, Cem Alper

IEEE2012

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