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Franz-Josef Haug

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Publications associées (113)

Implementation and understanding of p plus fired rear hole selective tunnel oxide passivating contacts enabling > 22% conversion efficiency in p-type c-Si solar cells

Christophe Ballif, Sylvain Nicolay, Philippe Wyss, Franz-Josef Haug, Matthieu Despeisse, Andrea Ingenito, Sofia Libraro

Passivating contacts are key enablers for high efficiency c-Si solar cells. Here, we present our latest advancement in terms of implementation and understanding in fired passivating contacts (FPC) used as rear p + passivating contact in p-type solar cells. ...

ELSEVIER2021

Passivating Polysilicon Recombination Junctions for Crystalline Silicon Solar Cells

Christophe Ballif, Aïcha Hessler-Wyser, Quentin Thomas Jeangros, Philippe Wyss, Franz-Josef Haug, Mario Joe Lehmann, Andrea Ingenito, Audrey Marie Isabelle Morisset

Polysilicon recombination junctions whose n-type bottom layers double as a passivating contact to the silicon surface are investigated. Such recombination junctions are a key element in the interconnection of tandem devices with a silicon bottom cell, and ...

2021

Quantification of hydrogen in nanostructured hydrogenated passivating contacts for silicon photovoltaics combining SIMS-APT-TEM: A multiscale correlative approach

Aïcha Hessler-Wyser, Quentin Thomas Jeangros, Franz-Josef Haug, Mario Joe Lehmann

Multiscale characterization of the hydrogenation process of silicon solar cell contacts based on c-Si/SiOx/ncSiCx(p) has been performed by combining dynamic secondary ion mass-spectrometry (D-SIMS), atom probe tomography (APT), and transmission electron mi ...

ELSEVIER2021

A recalculation of the efficiency limit in crystalline Si/Si tandem solar cells

Christophe Ballif, Franz-Josef Haug

We determine the limiting efficiency for monolithic tandem solar cells that employ crystalline silicon for the top-cell as well as for the bottom cell. In such a design, the top-cell extends over the region of very high generation rate that forms at the fr ...

2021

A round Robin-Highliting on the passivating contact technology

Franz-Josef Haug, Andrea Ingenito, Aditya Chaudhary, Audrey Marie Isabelle Morisset

The aim of this work is to demonstrate the maturity of the TOPCon technology by conducting a round-robin on symmetrically processed lifetime samples in the leading European PV institutes EPFL, ISC, CEA-INES, ISFH, IMEC and Fraunhofer ISE within the H2020 f ...

EDP SCIENCES S A2021

Towards Quantitative Interpretation of Fourier-Transform Photocurrent Spectroscopy on Thin-Film Solar Cells

Franz-Josef Haug, Michael Elias Stückelberger, Jakub Holovsky, Martin Müller

The method of detecting deep defects in photovoltaic materials by Fourier-Transform Photocurrent Spectroscopy has gone through continuous development during the last two decades. Still, giving quantitative predictions of photovoltaic device performance is ...

2020

Optimization of front SiNx/ITO stacks for high-efficiency two-side contacted c-Si solar cells with co-annealed front and rear passivating contacts

Christophe Ballif, Sylvain Nicolay, Xavier Niquille, Franz-Josef Haug, Frank Meyer, Andrea Ingenito

In this contribution, we present an electron selective passivating contact metallised with a low temperature process to target front side applications in crystalline silicon (c-Si) solar cells. In addition to an interfacial silicon oxide (SiOx) and an in-s ...

2020

A Mixed-Phase SiOx Hole Selective Junction Compatible With High Temperatures Used in Industrial Solar Cell Manufacturing

Christophe Ballif, Quentin Thomas Jeangros, Philippe Wyss, Xavier Niquille, Franz-Josef Haug, Matthieu Despeisse, Mario Joe Lehmann, Iris Anita Mack, Gizem Nogay, Josua Andreas Stückelberger, Andrea Ingenito

We present a p-type passivating rear contact that complies with integration into standard solar cell manufacturing with phosphorus-diffused front side. Our contact structure consists of a thin SiOx tunneling layer grown by wet chemistry and a stack of laye ...

IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC2020

25.1%-Efficient Monolithic Perovskite/Silicon Tandem Solar Cell Based on a p-type Monocrystalline Textured Silicon Wafer and High-Temperature Passivating Contacts

Christophe Ballif, Quentin Thomas Jeangros, Franz-Josef Haug, Mathieu Gérard Boccard, Matthieu Despeisse, Jérémie Werner, Florent Sahli, Gizem Nogay, Andrea Ingenito

2019

A method for quantitative nanoscale imaging of dopant distributions using secondary ion mass spectrometry: an application example in silicon photovoltaics

Aïcha Hessler-Wyser, Quentin Thomas Jeangros, Franz-Josef Haug, Mario Joe Lehmann, Gizem Nogay, Andrea Ingenito

A method for rapid quantitative imaging of dopant distribution using secondary ion mass spectrometry (SIMS) is described. The method is based on SIMS imaging of the cross-section of a reference sample with a known concentration profile. It is demonstrated ...

2019

Contributions to the contact resistivity in fired tunnel-oxide passivating contacts for crystalline silicon solar cells

Christophe Ballif, Franz-Josef Haug, Frank Meyer, Andrea Ingenito, Sofia Libraro

We investigate the contact resistivity of p-type passivating contacts for silicon solar cells. Our contact structures are compatible with firing, a rapid annealing process similar to the one used for sintering of the screen-printed metallisation in solar c ...

2019

Analysis of hydrogen distribution and migration in fired passivating contacts (FPC)

Christophe Ballif, Aïcha Hessler-Wyser, Quentin Thomas Jeangros, Philippe Wyss, Franz-Josef Haug, Matthieu Despeisse, Mario Joe Lehmann, Andrea Ingenito

High temperature passivating contacts for c-Si based solar cells are intensively studied because of their potential in boosting solar cell efficiency while being compatible with industrial processes at high temperatures. In this work, the hydrogenation mec ...

2019

Phosphorous-Doped Silicon Carbide as Front-Side Full-Area Passivating Contact for Double-Side Contacted c-Si Solar Cells

Christophe Ballif, Philippe Wyss, Franz-Josef Haug, Matthieu Despeisse, Gizem Nogay, Philipp Friedrich Hermann Löper, Josua Andreas Stückelberger, Andrea Ingenito, Luca Gnocchi

We present an electron selective passivating contact based on a tunneling SiOx capped with a phosphorous doped siliconcarbideandpreparedwithahigh-temperaturethermalanneal. We investigate in detail the effects of the preparation conditions of theSiCx(n)(i.e ...

2018

Recombination Analysis of Phosphorus-Doped Nanostructured Silicon Oxide Passivating Electron Contacts for Silicon Solar Cells

Christophe Ballif, Philippe Wyss, Franz-Josef Haug, Matthieu Despeisse, Gizem Nogay, Philipp Friedrich Hermann Löper, Josua Andreas Stückelberger, Andrea Ingenito

2018

Surface Defect Passivation of Silicon Micropillars

Anna Fontcuberta i Morral, Franz-Josef Haug, Riad Berrazouane, Josua Andreas Stückelberger, Dmitry Mikulik, Pablo Romero Gómez

2018

Properties of mixed phase silicon-oxide-based passivating contacts for silicon solar cells

Christophe Ballif, Quentin Thomas Jeangros, Philippe Wyss, Franz-Josef Haug, Matthieu Despeisse, Iris Anita Mack, Gizem Nogay, Philipp Friedrich Hermann Löper, Josua Andreas Stückelberger, Andrea Ingenito

2018

Shunt Quenching and Concept of Independent Global Shunt in Multijunction Solar Cells

Franz-Josef Haug, Jakub Holovsky

2018

A passivating contact for silicon solar cells formed during a single firing thermal annealing

Christophe Ballif, Quentin Thomas Jeangros, Franz-Josef Haug, Matthieu Despeisse, Monica Morales Masis, Gizem Nogay, Philipp Friedrich Hermann Löper, Oscar Esteban Rucavado Leandro, Andrea Ingenito

Passivating contacts are indispensable for achieving high conversion efficiency in crystalline-silicon solar cells. Their realization and integration into a convenient process flow have become crucial research objectives. Here, we report an alternative pas ...

2018

Crystalline Silicon Solar Cells With Coannealed Electron- and Hole-Selective SiCx Passivating Contacts

Christophe Ballif, Quentin Thomas Jeangros, Philippe Wyss, Franz-Josef Haug, Monica Morales Masis, Gizem Nogay, Philipp Friedrich Hermann Löper, Josua Andreas Stückelberger, Oscar Esteban Rucavado Leandro, Andrea Ingenito

We present electron- and hole-selective passivating contacts based on wet-chemically grown interfacial SiOx and overlying in-situ doped silicon carbide (SiCx) deposited by plasma-enhanced chemical vapor deposition. After annealing at 850 degrees C, excelle ...

2018

A passivating contact concept compatible with a short thermal treatment

Christophe Ballif, Philippe Wyss, Franz-Josef Haug, Matthieu Despeisse, Gizem Nogay, Josua Andreas Stückelberger, Andrea Ingenito

In this study we present a boron-doped silicon carbide layers as a hole-selective contact which is compatible with short annealing time (typically < 1 minute) as the one used for firing of metal pastes. The application of such layers on symmetrically proce ...

IEEE2018

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