Publications de Bernt Ketterer

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P-type gallium arsenide nanowires were grown with different silicon doping concentrations. The incorporation is monitored by Raman spectroscopy of the local vibrational modes. For Si-concentrations up to 1.4 x 10(18) cm(-3), silicon incorporates mainly in ...

GaAs nanowires with 100% wurtzite structure are synthesized by the vapor-liquid-solid method in a molecular beam epitaxy system, using gold as a catalyst. We use resonant Raman spectroscopy and photoluminescence to determine the position of the crystal-fie ...

Doped catalyst-free GaAs nanowires have been grown by molecular beam epitaxy with the gallium-assisted method. The spatial dependence of the dopant concentration and resistivity have been measured by Raman spectroscopy and four point electrical measurement ...

Growth of GaAs and InxGa1-xAs nanowires by the group-III assisted molecular beam epitaxy growth method on (001)GaAs/SiO2 substrates is studied in dependence on growth temperature, with the objective of maximizing the indium incorporation. Nanowire growth w ...

Mobility and carrier density in p-type GaAs nanowires measured by transmission Raman spectroscopy ...

Semiconductor nanowires offer a wide range of opportunities for newgenerations of nanoscale electronic and optic devices. For these applications to become reality, deeper understanding of the fundamental properties of the nanowires is required. In this the ...

Resonant Raman spectroscopy is realized on closely spaced nanowire-based quantum wells. Phonon quantization consistent with 2.4-nm-thick quantum wells is observed, in agreement with cross-section transmission electron microscopy measurements and photolumin ...

The development of low-temperature carbonization procedures promises to provide novel nanostructured carbon materials that are of high current interest in materials science and technology. Here, we report a "wet-chemical" carbonization method that utilizes ...

In semiconductor nanowires, the coexistence of wurtzite and zinc-blende phases enables the engineering of the electronic structure within a single material. This presupposes an exact knowledge of the band structure in the wurtzite phase. We demonstrate tha ...

Bernt Ketterer

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Compensation mechanism in silicon-doped gallium arsenide nanowires

Determination of the band gap and the split-off band in wurtzite GaAs using Raman and photoluminescence excitation spectroscopy

P-Doping Mechanisms in Catalyst-Free Gallium Arsenide Nanowires

In(Ga)As quantum dot formation on group-III assisted catalyst-free InGaAs nanowires

Mobility and carrier density in p-type GaAs nanowires measured by transmission Raman spectroscopy

Raman Spectroscopy of GaAs Nanowires : Doping Mechanisms and Fundamental Properties

Phonon confinement and plasmon-phonon interaction in nanowire-based quantum wells

Low-Temperature Preparation of Tailored Carbon Nanostructures in Water

Untangling the Electronic Band Structure of Wurtzite GaAs Nanowires by Resonant Raman Spectroscopy