Anna Fontcuberta i Morral

Chattez avec Graph Search

Posez n’importe quelle question sur les cours, conférences, exercices, recherches, actualités, etc. de l’EPFL ou essayez les exemples de questions ci-dessous.

AVERTISSEMENT : Le chatbot Graph n'est pas programmé pour fournir des réponses explicites ou catégoriques à vos questions. Il transforme plutôt vos questions en demandes API qui sont distribuées aux différents services informatiques officiellement administrés par l'EPFL. Son but est uniquement de collecter et de recommander des références pertinentes à des contenus que vous pouvez explorer pour vous aider à répondre à vos questions.

Raw data associated to the manuscript “van der Waals Epitaxy of Co10–xZn10–yMnx+y Thin Films: Chemical Composition Engineering and Magnetic Properties", J. Phys. Chem. C 2021, XXXX, XXX, XXX-XXX, DOI: https://doi.org/10.1021/acs.jpcc.1c00452 Abstract: To ...

Silicon used for electronics has a cubic crystal lattice, which makes the material unsuitable for photonics applications. A method for producing germanium and silicon-germanium alloys that have hexagonal lattices offers a solution. ...

Tungsten diselenide (WSe2) is a 2D semiconducting material, promising for novel optoelectronic and phononic applications. WSe2 has complex lattice dynamics and phonon structure. Numerous discrepancies in the literature exist regarding the interpretation an ...

Molecular beam epitaxy Ga-assisted synthesis of GaAs nanowires is demonstrated. The nucleation and growth are seen to be related to the presence of a SiO2 layer previously deposited on the GaAs wafer. The interaction of the reactive gallium with the SiO2 p ...

This chapter reviews the implementation of semiconductor nanowires as the active optical elements of nanowire-based photovoltaics. Some essential principles for understanding the semiconductor p-n junction photoresponse are briefly covered, followed by a m ...

We conducted temperature-dependent measurements of the photoluminescence (PL) polarization on GaAs nanowires (NWs) with polytypic zinc-blende/wurtzite structure in order to probe the symmetry and energy structure of the valence band in the wurtzite segment ...

Semiconductor nanowires are promising building blocks for next generation photonics. Indirect proofs of large absorption cross sections have been reported in nanostructures with subwavelength diameters, an effect that is even more prominent in vertically s ...

Semiconductors made with earth abundant elements are promising as absorbers in future large-scale deployment of photovoltaic technology. This paper reports on the epitaxial synthesis of monocrystalline zinc phosphide (Zn_3 P_2) films with thicknesses up to ...

InAs quantum dot arrays are obtained on GaAs nanowire facets by molecular beam epitaxy. The GaAs nanowires are first grown by the gallium-assisted catalyst-free method. Decoration of the nanowire facets with InAs quantum dots is achieved only when the face ...

Semiconductor nanowires (NWs) possess a fascinating ability to efficiently collect and trap light into a sub-wavelength volume due to the occurrence of leaky mode resonances. The same confinement ability is manifested by metal nanostructures thanks to the ...

Studying nanomaterial piezoelectricity and triboelectricity is attractive for energy and sensing applications. However, quantitative characterisation of electromechanical effects in nanomaterials is challenging due to practical limitations and possible com ...

A porous InGaN/GaN blue light-emitting diode is demonstrated using selective area sublimation. Transmission electron microscopy reveals that the structure is porous down to the Si substrate; however, the porosity is higher in the GaN buffer, while smaller ...

Optical-pump terahertz-prohe (OPTP) spectroscopy is a powerful, non-contact tool for extracting the electrical conductivity within a material. In this work, we show how OPTP spectroscopy can he used to extract the temperature-dependent electron mobility an ...

Selective area epitaxy constitutes a mainstream method to obtain reproducible nanomaterials. As a counterpart, self-assembly allows their growth without costly substrate preparation, with the drawback of uncontrolled positioning. We propose a mixed approac ...

InSb has the smallest bandgap and highest electron mobility among III-V semiconductors and is widely used for photodetectors and high-frequency electronic applications. Integration of InSb directly on Si would drastically reduce the fabrication cost and en ...

We demonstrate monocrystalline growth of GeSn on Ge and Si substrates by co-sputtering. We discuss the evolution of film growth with thickness, elucidating the effects of substrate temperature, sputtering source, and the importance of hydrogen dilution in ...

The tuning of the optical and electronic properties of semiconductor nanowires can be achieved by crystal phase engineering. Zinc-blende and diamond semiconductors exhibit pressure-induced structural transitions as well as a strong pressure dependence of t ...

GaAs nanowire arrays on Silicon offer great perspectives in the :optoeleetronics and solar cell industry. To fulfill this potential, gold-free growth in predetermined positions should be achieved. Ga-assisted growth of GaAs nano-wires in the form of array ...

A thin film grown on a substrate to which the attractive forces are of lower strength than covalent, metallic and/or ionic bonds can be detached from the substrate without the need of a Smart-cut type of process, e.g. without the need of ion implantation. ...

Nanowires are filamentary crystals with a tailored diameter ranging from few to ~100 nm. We demonstrate their integration on silicon and show how they enable/improve applications in the areas of lasing, photodetection and solar cells. ...

Anna Fontcuberta i Morral

Chattez avec Graph Search

Dataset for "Van der Waals Epitaxy of Co10–xZn10–yMnx+y Thin Films: Chemical Composition Engineering and Magnetic Properties"

Nanostructured alloys light the way to silicon-based photonics

Unveiling the complex phonon nature and phonon cascades in 1L to 5L WSe2 using multiwavelength excitation Raman scattering

Nucleation mechanism of gallium-assisted molecular beam epitaxy growth of gallium arsenide nanowires

III-V semiconductor nanowire solar cells

Valence band structure of polytypic zinc-blende/wurtzite GaAs nanowires probed by polarization-dependent photoluminescence

Visual Understanding of Light Absorption and Waveguiding in Standing Nanowires with 3D Fluorescence Confocal Microscopy

The path towards 1 µm monocrystalline Zn3 P2 films on InP: substrate preparation, growth conditions and luminescence properties

InAs Quantum Dot Arrays Decorating the Facets of GaAs Nanowires

Engineering light absorption in single-nanowire solar cells with metal nanoparticles

Time-resolved open-circuit conductive atomic force microscopy for direct electromechanical characterisation

Porous Nitride Light-Emitting Diodes

Unveiling Temperature-Dependent Scattering Mechanisms in Semiconductor Nanowires Using Optical-Pump Terahertz-Probe Spectroscopy

Simultaneous Selective Area Growth of Wurtzite and Zincblende Self-Catalyzed GaAs Nanowires on Silicon

Fabrication of Single-Crystalline InSb-on-Insulator by Rapid Melt Growth

Co-Sputtered Monocrystalline GeSn for Infrared Photodetection

Pressure Tuning of the Optical Properties of GaAs Nanowires

High Yield of GaAs Nanowire Arrays on Si Mediated by the Pinning and Contact Angle of Ga

Layer transfer of epitaxial layers and thin films obtained by van der waals growth initiation

III-V nanowires on si for applications in photonics