Anna Fontcuberta i Morral

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Publications associées (286)

Single-valley high-mobility (110) AlAs quantum wells with anisotropic mass

Anna Fontcuberta i Morral

We studied a doping series of (110)-oriented AlAs quantum wells (QWs) and observed transport evidence of single anisotropic-mass valley occupancy for the electrons in a 150 Å wide QW. Our calculations of strain and quantum confinement for these samples pre ...

2008

Growth Methods and Properties of High Purity III-V Nanowires by Molecular Beam Epitaxy

Anna Fontcuberta i Morral

The synthesis and properties of catalyst-free III-V nanowires with MBE is reviewed. The two main methods are Selective Area Epitaxy and gallium-assisted synthesis. The growth mechanisms are reviewed, along with the design possibilities of each technique. F ...

Springer2008

Nanometer-scale sharpness in corner-overgrown heterostructures

Anna Fontcuberta i Morral

A corner-overgrown GaAsAlGaAs heterostructure is investigated with transmission and scanning transmission electron microscopy, demonstrating self-limiting growth of an extremely sharp corner profile 3.5 nm wide. In the AlGaAs layers, we observe self-ordere ...

2008

Synthesis of silicon nanowires with wurtzite crystalline structure by using standard chemical vapor deposition

Anna Fontcuberta i Morral

The synthesis and wurtzite crystalline structure of silicon nanowires (NW) were investigated using chemical vapor deposition (CVD). Si nanowires were synthesized using oxidized substrate by a vapor-liquid-solid (VLS) method. Thermally oxidized Si substrate ...

2007

Lattice-mismatched monolithic GaAs/inGaAs two-junction solar cells by direct wafer bonding

Anna Fontcuberta i Morral

Direct bonded interconnect between subcells of a lattice-mismatched III-V compound multijunction cell would enable dislocation-free active regions by confining the defect network needed for lattice mismatch accommodation to tunnel junction interfaces, whil ...

IEEE Computer Societyhelp@computer.org2006

Direct-bonded GaAs/InGaAs tandem solar cell

Anna Fontcuberta i Morral

A direct-bonded GaAs/InGaAs solar cell is demonstrated. The direct-bonded interconnect between subcells of this two-junction cell enables monolithic interconnection without threading dislocations and planar defects that typically arise during lattice-misma ...

American Institute of Physics2006

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