Publications de Marlene Glauser

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The III-nitride semiconductor material system - (InAlGa)N - is of highest interest for optoelectronic applications due to its direct bandgap, tunable from the ultraviolet to the infrared spectral range. The most well-known are white light-emitting diodes, ...

The main emission characteristics of electrically driven polariton lasers based on planar GaN microcavities with embedded InGaN quantum wells are studied theoretically. The polariton emission dependence on pump current density is first modeled using a set ...

A 3 lambda/2 (In,Ga)N/GaN resonant cavity, designed for similar to 415nm operation, is grown by molecular beam epitaxy and is sandwiched between a 39.5-period (In,Al)N/GaN distributed Bragg reflector (DBR), grown on c-plane GaN-on-sapphire pseudo-substrate ...

A room temperature polariton condensate realized in a microcavity with embedded GaN quantum wells emits linearly polarized light at threshold with the plane of polarization pinned to one of the crystallographic axes. With increasing pumping power, a depinn ...

The pronounced optical in-plane anisotropy of a suitably designed nonpolar GaN-based microcavity, mainly inherited from the valence-band complexity of wurtzite semiconductors, allows the coexistence of two different light-matter coupling regimes along orth ...

The pressure-induced changes in the electronic band structures of In-containing nitride alloys, InxGa1-xN and InxAl1-xN are examined experimentally as well as by ab initio calculations. It is found that the band gap pressure coefficients, dE(g)/dp, exhibit ...

We present a comprehensive study of the anisotropic optical properties of nonpolar GaN/AlGaN multiple quantum wells intentionally designed to act as an active region of a planar microcavity operating in the strong-coupling regime. The strain induced by the ...

Contrary to the case of III-nitride based visible light-emitting diodes for which the inhomogeneous linewidth broadening characteristic of InGaN-based multiple quantum well (MQW) heterostructures does not appear as a detrimental parameter, such a broadenin ...

We study the relative intensity noise (RIN) per unit bandwidth in polariton laser diodes (LDs) for two pumping geometries, namely, the direct electrical and the intracavity ones as originally described in I. Iorsh et al. [Phys. Rev. B 86, 125308 (2012)], b ...

Marlene Glauser

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InGaN alloys and heterostructures : impact of localization effects on light-matter interaction in planar microcavities

Generic picture of the emission properties of III-nitride polariton laser diodes: Steady state and current modulation response

Q-factor of (In,Ga)N containing III-nitride microcavity grown by multiple deposition techniques

Pinning and Depinning of the Polarization of Exciton-Polariton Condensates at Room Temperature

Nonlinear emission properties of an optically anisotropic GaN-based microcavity

Anomalous composition dependence of the band gap pressure coefficients in In-containing nitride semiconductors

Tailoring the light-matter coupling in anisotropic microcavities: Redistribution of oscillator strength in strained m-plane GaN/AlGaN quantum wells

InGaN/GaN quantum wells for polariton laser diodes: Role of inhomogeneous broadening

Relative intensity noise and emission linewidth of polariton laser diodes