Sylvain Nicolay

Cette personne n’est plus à l’EPFL

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Publications associées (68)

Lattice-matched GaN-InAlN waveguides at lambda=1.55 mu m grown by metal-organic vapor phase epitaxy

Jean-François Carlin, Nicolas Grandjean, Eric Feltin, Sylvain Nicolay, Mauro Mosca

We report on the demonstration of low-loss, single-mode GaN-InAlN ridge waveguides (WGs) at fiber-optics telecommunication wavelengths. The structure grown by metal-organic vapor phase epitaxy contains AlInN cladding layers lattice-matched to GaN. For slab ...

2008

Current status of AlInN layers lattice-matched to GaN for photonics and electronics

Jean-François Carlin, Marcel Py, Julien Dorsaz, Nicolas Grandjean, Raphaël Butté, Eric Feltin, Sylvain Nicolay, Mauro Mosca, Dobri Simeonov, Gabriel Christmann, Antonino Francesco Castiglia, Marcus Gonschorek

We report on the current properties of Al1-x InxN (x approximate to 0.18) layers lattice- matched ( LM) to GaN and their specific use to realize nearly strain- free structures for photonic and electronic applications. Following a literature survey of the g ...

2007

Strain-induced interface instability in GaN/AlN multiple quantum wells

Jean-François Carlin, Nicolas Grandjean, Eric Feltin, Sylvain Nicolay

It is shown that in GaN/AlN multiple quantum wells (MQWs), strain is a critical parameter for achieving short-wavelength intersubband transitions (ISBTs). This is investigated by comparing GaN/AlN MQWs grown by metal organic vapor phase epitaxy on either A ...

2007

Nitride-based heterostructures grown by MOCVD for near- and mid-infrared intersubband transitions

Jean-François Carlin, Marc Ilegems, Nicolas Grandjean, Raphaël Butté, Eric Feltin, Sylvain Nicolay, Mauro Mosca

Intersubband (lSB) optical absorption in different nitride-based heterostructures grown by metal-organic chemical vapour deposition (MOCVD) is reported. The role of indium in AlInN/GaN multi-quantum wells (MQWs) is investigated. At high concentration (15%) ...

Wiley2007

Near infrared absorption and room temperature photovoltaic response in AlN/GaN superlattices grown by metal-organic vapor-phase epitaxy

Jean-François Carlin, Nicolas Grandjean, Eric Feltin, Sylvain Nicolay

We report on intersubband absorption of near infrared radiation in AlN/GaN superlattice structures grown by metal-organic vapor-phase epitaxy. A good correlation between well thickness and absorption peak energy was obtained. One sample shows a photovoltai ...

2006

Indium surfactant effect on AlN/GaN heterostructures grown by metal-organic vapor-phase epitaxy: Applications to intersubband transitions

Jean-François Carlin, Marc Ilegems, Nicolas Grandjean, Eric Feltin, Sylvain Nicolay, Mauro Mosca

We report on a dramatic improvement of the optical and structural properties of AlN/GaN multiple quantum wells (MQWs) grown by metal-organic vapor-phase epitaxy using indium as a surfactant. This improvement is observed using photoluminescence as well as x ...

2006

Midinfrared intersubband absorption in lattice-matched AlInN/GaN multiple quantum wells

Jean-François Carlin, Marc Ilegems, Nicolas Grandjean, Raphaël Butté, Eric Feltin, Sylvain Nicolay, Mauro Mosca

We report the observation of midinfrared intersubband (ISB) absorption in nearly lattice-matched AlInN/GaN multiple-quantum-wells. A clear absorption peak is observed around 3 mu m involving transitions from the conduction band ground state to the first ex ...

2005

Progresses in III-nitride distributed Bragg reflectors and microcavities using AlInN/GaN materials

Jean-François Carlin, Julien Dorsaz, Nicolas Grandjean, Raphaël Butté, Eric Feltin, Sylvain Nicolay, Gabriel Christmann

We propose to use lattice-matched AlInN/GaN to replace the Al(Ga)N/GaN material system for III-nitride Bragg reflectors, despite the poor material quality of AlInN reported until very recently. We report an improvement of AlInN material that allowed for su ...

2005

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