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Nicolas Grandjean

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Publications associées (249)

102-GHz AlInN/GaN HEMTs on Silicon With 2.5-W/mm Output Power at 10 GHz

Jean-François Carlin, Nicolas Grandjean, Eric Feltin, Marcus Gonschorek

Grown on a (111) high-resistivity silicon substrate, 0.1-mu m gate AlInN/GaN high-electron mobility transistors (HEMTs) achieve a maximum current density of 1.3 A/mm, an extrinsic transconductance of 330 mS/mm, and a peak current gain cutoff frequency as h ...

Institute of Electrical and Electronics Engineers2009

Different pressure behavior of GaN/AlGaN quantum structures grown along polar and nonpolar crystallographic directions

Nicolas Grandjean

High quality GaN/AlGaN multiquantum well (QW) structures were grown by ammonia molecular beam epitaxy along the (0001) polar and (11 (2) over bar0) nonpolar directions. Each sample contains three QWs with thicknesses of 2, 3, and 4 nm as well as 10 nm Al0. ...

2009

Temperature mapping of Al0.85In0.15N/AlN/GaN high electron mobility transistors through micro-photoluminescence studies

Jean-François Carlin, Marcel Py, Nicolas Grandjean, Eric Feltin, Dobri Simeonov, Marcus Gonschorek

Crack-free lattice-matched Al0.85In0.15N/GaN heterostructures were grown on sapphire substrates with barrier thicknesses up to 100 nm which exhibit very high polarization-induced electron sheet density (>2.5 x 10(13) cm(-2)) located at the heterointerface. ...

2009

Al0.83In0.17N lattice-matched to GaN used as an optical blocking layer in GaN-based edge emitting lasers

Jean-François Carlin, Alexei Altoukhov, Gatien Cosendey, Nicolas Grandjean, Raphaël Butté, Eric Feltin, Antonino Francesco Castiglia

Nitride-based blue laser diode structures with either Al0.83In0.17N/Al0.07Ga0.93N or Al0.87In0.13N bottom claddings have been fabricated and compared to standard structures including solely Al0.07Ga0.93N bottom claddings. Lasing emission at 415 nm is achie ...

2009

Low-temperature time-resolved cathodoluminescence study of exciton dynamics involving basal stacking faults in a-plane GaN

Benoît Marie Joseph Deveaud, Jean-Daniel Ganière, Denis Martin, Nicolas Grandjean, Tiankai Zhu, Jelena Ristic, Pierre Michel Corfdir

Time-resolved cathodoluminescence at 27 K has been performed on a-plane GaN grown by epitaxial lateral overgrowth. We detail the relaxation and recombination mechanisms of excitons [free or bound to neutral donors, or bound to I1-type basal stacking faults ...

AIP American Institute of Physics2009

Exciton localization on basal stacking faults in a-plane epitaxial lateral overgrown GaN grown by hydride vapor phase epitaxy

Benoît Marie Joseph Deveaud, Jean-Daniel Ganière, Denis Martin, Jacques Levrat, Nicolas Grandjean, Tiankai Zhu, Jelena Ristic, Pierre Michel Corfdir

We present a detailed study of the luminescence at 3.42 eV usually observed in a-plane epitaxial lateral overgrowth (ELO) GaN grown by hydride vapor phase epitaxy on r-plane sapphire. This band is related to radiative recombination of excitons in a commonl ...

American Institute of Physics2009

M-Plane GaN Grown on m-Plane Sapphire by Hydride Vapor Phase Epitaxy

Denis Martin, Nicolas Grandjean, Tiankai Zhu

M-plane GaN epilayers have been directly grown on m-plane sapphire substrates by hydride vapor phase epitaxy using a low temperature GaN nucleation layer. The m-plane GaN surface is optically smooth and mirror-like, with rms roughness similar to 2.0 nm (5 ...

2009

GaN-based laser diodes including a lattice-matched Al0.83In0.17N cladding layer

Jean-François Carlin, Gatien Cosendey, Nicolas Grandjean, Raphaël Butté, Eric Feltin, Antonino Francesco Castiglia

Nitride blue lasers including an AlInN cladding lattice matched to GaN were fabricated. Lasing at 415nm is observed at 300K with a threshold current density of 7.5kA/cm(2) and a peak power of 140mW at 1.2A. (C) 2009 Optical Society of America ...

Ieee2009

GaN grown on (111) single crystal diamond substrate by molecular beam epitaxy

Denis Martin, Nicolas Grandjean, Antonino Francesco Castiglia, Marco Malinverni

GaN epilayers are grown on (111) oriented single crystal diamond substrate by ammonia-source molecular beam epitaxy. Each step of the growth is monitored in situ by reflection high energy electron diffraction. It is found that a two-dimensional epitaxial w ...

2009

Room temperature polariton lasing in a GaN/AlGaN multiple quantum well microcavity

Jean-François Carlin, Nicolas Grandjean, Raphaël Butté, Eric Feltin, Gabriel Christmann

The authors report room temperature polariton lasing at lambda similar to 345 nm in a hybrid AlInN/AlGaN multiple quantum well microcavity (MQW-MC) containing a GaN/AlGaN MQW active region, i.e., the achievement under nonresonant optical excitation of cohe ...

2008

High quality nitride based microdisks obtained via selective wet etching of AlInN sacrificial layers

Jean-François Carlin, Alexei Altoukhov, Nicolas Grandjean, Raphaël Butté, Eric Feltin, Dobri Simeonov, Antonino Francesco Castiglia

The authors report a technique for selective wet chemical etching of an AlInN sacrificial layer lattice-matched to GaN for the fabrication of air-gap photonic structures. It is used to demonstrate high quality factor (Q) microdisk cavities. Whispering gall ...

2008

Biexciton kinetics in GaN quantum wells: Time-resolved and time-integrated photoluminescence measurements

Jean-François Carlin, Nicolas Grandjean, Raphaël Butté, Eric Feltin, Dobri Simeonov, Massimo Gurioli

We report on the experimental achievement of narrow ultraviolet excitonic and biexcitonic emission from GaN/AlGaN quantum wells. The very large biexciton binding energy (up to 12 meV) inhibits thermalization between the two species allowing to study the re ...

2008

Suppression of leakage currents in GaN-based LEDs induced by reactive-ion etching damages

Jean-François Carlin, Julien Dorsaz, Nicolas Grandjean, Eric Feltin, Mauro Mosca, Antonino Francesco Castiglia

Forward and reverse leakage currents in GaN/InGaN multi-quantum well light-emitting diodes (LEDs) are caused by reactive-ion etching (RIE) damages during device patterning. A method to recover the damaged surfaces, based on a chemical etch in KOH: ethylene ...

2008

Spontaneous polarization buildup in a room-temperature polariton laser

Jean-François Carlin, Nicolas Grandjean, Raphaël Butté, Eric Feltin, Gabriel Christmann

We observe the buildup of strong (similar to 50%) spontaneous vector polarization in emission from a GaN-based polariton laser excited by short optical pulses at room temperature. The Stokes vector of emitted light changes its orientation randomly from one ...

2008

Lattice-matched GaN-InAlN waveguides at lambda=1.55 mu m grown by metal-organic vapor phase epitaxy

Jean-François Carlin, Nicolas Grandjean, Eric Feltin, Sylvain Nicolay, Mauro Mosca

We report on the demonstration of low-loss, single-mode GaN-InAlN ridge waveguides (WGs) at fiber-optics telecommunication wavelengths. The structure grown by metal-organic vapor phase epitaxy contains AlInN cladding layers lattice-matched to GaN. For slab ...

2008

Impact of quantum confinement and quantum confined Stark effect on biexciton binding energy in GaN/AlGaN quantum wells

Jean-François Carlin, Jacques Levrat, Nicolas Grandjean, Raphaël Butté, Eric Feltin, Dobri Simeonov, Massimo Gurioli

We report on time-resolved photoluminescence measurements carried out along the thickness gradient of two types of GaN/AlGaN quantum wells with low Al content in the barriers (5% and 9%, respectively). A reduction of the biexciton binding energy with incre ...

2008

Effect of anodic oxidation on the characteristics of lattice-matched AlInN/GaN heterostructures

Jean-François Carlin, Nicolas Grandjean, Eric Feltin

The effect of anodic oxidation on the electronic characteristics of lattice-matched AlInN/GaN heterostructures was investigated using field-effect transistor (FET) structures with the gate areas in direct contact with the electrolytes. The gate surface of ...

2008

Effects of strain and composition on the lattice parameters and applicability of Vegard's rule in Al-rich Al1-xInxN films grown on sapphire

Jean-François Carlin, Nicolas Grandjean, Eric Feltin, Marcus Gonschorek

The lattice parameters and strain evolution in Al1-xInxN films with 0.07

2008

Technology and performance of InAlN/AlN/GaN HEMTs with gate insulation and current collapse suppression using ZrO2 or HfO2

Jean-François Carlin, Nicolas Grandjean, Eric Feltin, Marcus Gonschorek

We present the technology and performance of InAlN/AlN/GaN MOS HEMTs with gate insulation and surface passivation using ZrO2 or HfO2. About 10-nm-thick high-k dielectrics were deposited by MOCVD before the ohmic contact processing. Plasma pretreatment allo ...

2008

Complex behavior of biexcitons in GaN quantum dots due to a giant built-in polarization field

Nicolas Grandjean, Raphaël Butté, Dobri Simeonov

In-depth optical spectroscopic studies of single polar GaN/AlN quantum dots (QDs) grown by molecular beam epitaxy are carried out by means of low-temperature microphotoluminescence. Luminescence linewidths as low as 700 mu eV are obtained allowing thorough ...

2008

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