Publications de Cyrille Hibert

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L'émergence de procédés de gravure profonde performants (vitesse, anisotropie, uniformité…) de matériaux tels que le silicium (Si), la silice (SiO2) et certains polymères repose sur: • Le développement d'équipement de gravure permettant le contrôle indépendant de la densité du plasma et de l'énergie des ions afin d'optimiser l'effet de synergie démontré par Coburn COB 79, • et l'utilisation de procédés spécifiques à la gravure profonde pour obtenir l'anisotropie (ions unidirectionnels et éventuellement pr

The standard lithographic techniques to fabricate electronic components involve the use of polymers, baking steps and chemicals. This typically restricts their application to flat substrates made up of standard materials. Stencil lithography has been propo ...

We report a recent breakthrough to control profile angle for SiO2 Deep Anisotropic Dry Etching (SDADE). Our study reveals that gas residence time is the key parameter to control profile angle. Moreover, we show that it is possible to control profile angle, ...

A novel microelectromechanical stage with one uniaxial set of combs capable of 2-D actuation is presented. A polymer microlens array (MLA) is mounted vertically onto the stage. Driven at resonance, the stage deflects 124 mu m out of plane and 34 mu m in pl ...

The design, fabrication and characterization of CMOS-compatible optoelectronic devices is discussed. All devices are fabricated on silicon on insulator (SOI) substrates which makes them suitable for three-dimensional (3-D) telecommunication photonic integr ...

Cyrille Hibert

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Apport des technologies plasma dans la fabrication des microsystèmes

All-stencil transistor fabrication on 3D silicon substrates

Profile angle control in SIO2 deep anisotropic dry etching for MEMS fabrication

Two-Dimensional MEMS Stage Integrated With Microlens Arrays for Laser Beam Steering

Fabrication process and model for a MEMS parallel-plate capacitor above CPW line

RF MEMS switches for mobile communications : from metal-metal to suspended-gate MOS device architectures

3-D integrable optoelectronic devices for telecommunications ICs

High Quality Factor Copper Inductors Integrated in Deep Dry Etched Quartz Substrates

Combining micelle self-assembly with nanostencil lithography to create periodic/aperiodic micro- /nanopatterns on surfaces

Direct Etching of High Aspect structures through a Stencil

Dry Etching Techniques of Amorphous Silicon for Suspended Metal Membrane RF MEMS Capacitors

Fabrication of Silicon-On-Insulator MEM Resonators with Deep Sub-Micron Transduction Gaps

High Performance Copper / Polyimide Inductors Fabricated Using Thick Double Metal Layer Damascene Process

High-Q Inductors for 1-10 GHz Applications : Modeling, Simulation, Design and Fabrication

A Flexible Platform Based on Self-Assembly of Block-Copolymer Micelles to Create Nanotopographies of Tunable Dimensions in Different Materials. Combination with Top-Down Methods and first Applications as Cell Growth Substrates

Study of a mechanically clamped cryo-chuck device in a high density plasma for deep anisotropic etching of silicon

High-Q Copper / Polyimide Inductors: Fabrication Results and Electrical Performance Analysis

Fabrication of silicon-on-insulator MEM resonators with deep sub-micron transduction gaps

Copper/polyimide fabrication process for above-IC integration of high quality factor inductors

High Tunning Range AISi RF MEMS Capacitors Fabricated with Sacrificial Amorphous Silicon Surface Micromachining