Publications de Kirsten Emilie Moselund

Publications associées (51)

Fabrication and Characterization of Gate-All-Around Silicon Nanowires on Bulk Silicon

Mihai Adrian Ionescu, Didier Bouvet, Kirsten Emilie Moselund, Vincent Pott, Luca De Michielis

This paper reports on the top-down fabrication and electrical performance of silicon nanowire (SiNW) gate-all-around (GAA) n-type and p-type MOSFET devices integrated on bulk silicon using a local-silicon-on-insulator (SOI) process. The proposed local-SOI ...

2008

Image sensitive spectral response of semiconductor random network lasers

Kirsten Emilie Moselund

We experimentally study the spectral lasing response of on-chip InP network random lasers under illumination of different input image shapes. Deep-learning models have become increasingly omipresent throughout society. However, they are blighted by exponen ...

SPIE-INTERNATIONAL SOCIETY FOR OPTICAL ENGINEERING2024

Dopant-Induced Modifications of GaxIn(1-x)P Nanowire-Based p-n Junctions Monolithically Integrated on Si(111)

Anna Fontcuberta i Morral, Kirsten Emilie Moselund, Luca Francaviglia, Heike Riel, Nicolas Bologna

Today, silicon is the most used material in photovoltaics, with the maximum conversion efficiency getting very close to the Shockley-Queisser limit for single-junction devices. Integrating silicon with higher band-gap ternary III-V absorbers is the path to ...

2018

The high-mobility bended n-channel silicon nanowire transistor

Mihai Adrian Ionescu, Didier Bouvet, Kirsten Emilie Moselund, Vincent Pott, Luca De Michielis, Mohammad Najmzadeh

This work demonstrates a method for incorporating strain in silicon nanowire gate-all-around (GAA) n-MOSFETs by oxidation-induced bending of the nanowire channel and reports on the resulting improvement in device performance. The variation in strain measur ...

Institute of Electrical and Electronics Engineers2010

Plasma etching for fabrication of complex nanophotonic lasers from bonded InP semiconductor layers

Kirsten Emilie Moselund

Integrating optically active III-V materials on silicon/insulator platforms is one potential path towards improving the energy efficiency and performance of modern computing. Here we demonstrate the applicability of direct wafer bonding combined with plasm ...

ELSEVIER2023

Variability-Aware Design of Multilevel Logic Decoders for Nanoscale Crossbar Memories

Giovanni De Micheli, Mihai Adrian Ionescu, Yusuf Leblebici, David Atienza Alonso, Didier Bouvet, Kirsten Emilie Moselund, Mohamed Haykel Ben Jamaa

The fabrication of crossbar memories with sublithographic features is expected to be feasible within several emerging technologies; in all of them, the nanowire (NW) decoder is a critical part since it bridges the sublithographic wires to the outer circuit ...

2008

NANOSIL network of excellence--silicon-based nanostructures and nanodevices for long-term nanoelectronics applications

Mihai Adrian Ionescu, Kirsten Emilie Moselund, Katherine Boucart

NANOSIL Network of Excellence [NANOSIL NoE web site ], funded by the European Commission in the 7th Framework Programme (ICT-FP7, no 216171), aims at European scale integration of the excellent European research laboratories and their c ...

2008

Prospects for logic-on-a-wire

Giovanni De Micheli, Mihai Adrian Ionescu, Yusuf Leblebici, David Atienza Alonso, Didier Bouvet, Kirsten Emilie Moselund, Mohamed Haykel Ben Jamaa

In this paper we present the top-down fabrication of gate-all-around (GAA) and body-tied @W-gate devices by a combination of etching and oxidation steps resulting in a local silicon-on-insulator structure. The GAA has advantages in terms of enhanced curren ...

2008

Review: III-V infrared emitters on Si: fabrication concepts, device architectures and down-scaling with a focus on template-assisted selective epitaxy

Kirsten Emilie Moselund

The local integration of III-Vs on Si is relevant for a wide range of applications in electronics and photonics, since it combines a mature and established materials platform with desired physical properties such as a direct and tuneable bandgap and high m ...

IOP Publishing Ltd2023

Three-dimensional electronic devices fabricated on a top-down silicon nanowire platform

Kirsten Emilie Moselund

For the past couple of decades the desire to add more complexity to a computer chip, while simultaneously reducing the cost per bit, has been accommodated by down-scaling. This approach has been extremely successful in the past, but like all good things it ...

EPFL2008

Surface Lattice Resonance Lasers with Epitaxial InP Gain Medium

Kirsten Emilie Moselund

Surface lattice resonance (SLR) lasers, where the gain is supplied by a thin-film active material and the feedback comes from multiple scattering by plasmonic nanoparticles, have shown both low threshold lasing and tunability of the angular and spectral em ...

AMER CHEMICAL SOC2024

VO2 oscillators coupling for Neuromorphic Computation

Mihai Adrian Ionescu, Igor Stolichnov, Kirsten Emilie Moselund, Elisabetta Corti

New computation schemes inspired by biological processes can outperform standard von-Neumann architectures in dealing with complex and unstructured tasks. As a new approach, systems of frequency-locked, coupled oscillators are investigated using the phase ...

IEEE2019

Time-Delay Encoded Image Recognition in a Network of Resistively Coupled VO2 on Si Oscillators

Kirsten Emilie Moselund

Oscillatory neural networks based on insulator to metal transition of VO2 switches are implemented for image recognition. The VO2 oscillators are fabricated on silicon in a CMOS compatible process.A fullyconnected network of coupled oscillators is investig ...

Institute of Electrical and Electronics Engineers2020

Fabrication of silicon nano wires and gate-all-around MOS devices

Didier Bouvet, Kirsten Emilie Moselund

The invention relates to methods for manufacturing semiconductor devices. Processes are disclosed for implementing suspended single crystal silicon nano wires (NWs) using a combination of anisotropic and isotropic etches and spacer creation for sidewall pr ...

2007

Monolithically integrated catalyst-free High Aspect Ratio InAs-On-Insulator (InAsOI) FinFETs for pH sensing

Mihai Adrian Ionescu, Kirsten Emilie Moselund, Francesco Bellando, Fabien Patrick Wildhaber, Junrui Zhang, Maneesha Rupakula, Clarissa Convertino

In this work, we report a novel Indium Arsenide-on-insulator (InAsOI) FinFET platform designed with record high aspect ratio that favor the use of the devices as charge sensors. InAs has very high mobility among III-V semiconductors and an intrinsic surfac ...

IEEE2019

Single-Mode Emission in InP Microdisks on Si Using Au Antenna

Kirsten Emilie Moselund

An important building block for on-chip photonic applications is a scaled emitter. Whispering gallery mode cavities based on III-Vs on Si allow for small device footprints and lasing with low thresholds. However, multimodal emission and wavelength stabilit ...

AMER CHEMICAL SOC2022

Designed Semiconductor Network Random Lasers

Kirsten Emilie Moselund, Alexis Arnaudon

Conventional lasers typically support a well‐defined comb of modes. Coupling many resonators together to form larger complex cavities enables the design of the spatial and spectral distribution of modes, for sensitive and controllable on‐chip light sources ...

Wiley2024

Semiconductor device and method of manufacturing a semiconductor device

Mihai Adrian Ionescu, Didier Bouvet, Kirsten Emilie Moselund

The local bending of a silicon nanowire induces tensile strain in the wire due to the stretching of the silicon lattice. This in turn enhances the mobility of the free carriers (electrons) in the direction of transport along the wire. Thus, for example, wh ...

2009

DRAM Based on Hysteresis in Impact Ionization Single-Transistor-Latch

Mihai Adrian Ionescu, Maher Kayal, Didier Bouvet, Kirsten Emilie Moselund, Vincent Pott, Cédric Meinen

This work reports on memory applications of punch-through impact ionization single-transistor latch (PIMOS), showing abrupt current switching (3-10mV/dec.) as well as hysteresis in both ID(VDS) and ID(VGS). A capacitor-less 1PIMOS - 1 MOSFET DRAM memory is ...

2008

Fault-Tolerant Multi-Level Logic Decoder for Nanoscale Crossbar Memory Arrays

Mihai Adrian Ionescu, Giovanni De Micheli, Yusuf Leblebici, David Atienza Alonso, Didier Bouvet, Kirsten Emilie Moselund, Mohamed Haykel Ben Jamaa

Several technologies with sub-lithographic features are targeting the fabrication of crossbar memories in which the nanowire decoder is playing a major role. In this paper, we suggest a way to reduce the decoder size and keep it defect tolerant by using mu ...

2007