Kirsten Emilie Moselund

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This paper reports on the top-down fabrication and electrical performance of silicon nanowire (SiNW) gate-all-around (GAA) n-type and p-type MOSFET devices integrated on bulk silicon using a local-silicon-on-insulator (SOI) process. The proposed local-SOI ...

We experimentally study the spectral lasing response of on-chip InP network random lasers under illumination of different input image shapes. Deep-learning models have become increasingly omipresent throughout society. However, they are blighted by exponen ...

Today, silicon is the most used material in photovoltaics, with the maximum conversion efficiency getting very close to the Shockley-Queisser limit for single-junction devices. Integrating silicon with higher band-gap ternary III-V absorbers is the path to ...

This work demonstrates a method for incorporating strain in silicon nanowire gate-all-around (GAA) n-MOSFETs by oxidation-induced bending of the nanowire channel and reports on the resulting improvement in device performance. The variation in strain measur ...

Integrating optically active III-V materials on silicon/insulator platforms is one potential path towards improving the energy efficiency and performance of modern computing. Here we demonstrate the applicability of direct wafer bonding combined with plasm ...

The fabrication of crossbar memories with sublithographic features is expected to be feasible within several emerging technologies; in all of them, the nanowire (NW) decoder is a critical part since it bridges the sublithographic wires to the outer circuit ...

NANOSIL Network of Excellence [NANOSIL NoE web site ], funded by the European Commission in the 7th Framework Programme (ICT-FP7, no 216171), aims at European scale integration of the excellent European research laboratories and their c ...

In this paper we present the top-down fabrication of gate-all-around (GAA) and body-tied @W-gate devices by a combination of etching and oxidation steps resulting in a local silicon-on-insulator structure. The GAA has advantages in terms of enhanced curren ...

The local integration of III-Vs on Si is relevant for a wide range of applications in electronics and photonics, since it combines a mature and established materials platform with desired physical properties such as a direct and tuneable bandgap and high m ...

For the past couple of decades the desire to add more complexity to a computer chip, while simultaneously reducing the cost per bit, has been accommodated by down-scaling. This approach has been extremely successful in the past, but like all good things it ...

Surface lattice resonance (SLR) lasers, where the gain is supplied by a thin-film active material and the feedback comes from multiple scattering by plasmonic nanoparticles, have shown both low threshold lasing and tunability of the angular and spectral em ...

Oscillatory neural networks based on insulator to metal transition of VO2 switches are implemented for image recognition. The VO2 oscillators are fabricated on silicon in a CMOS compatible process.A fullyconnected network of coupled oscillators is investig ...

In this paper, we report very abrupt current switching and hysteresis effects due to saddle point and impact ionization in low doped n-channel Omega-Gate MOSFET (Omega-MOSFET). The Omega-MOSFETs are fabricated on low-doped (8x10(14)cm(-3)) bulk silicon by bulk silicon isotropic etching and sacrificial oxidation. A specific abrupt impact ionization and hysteresis of I-D(V-DS) are observed at high drain voltage (V-DS > 11V) on transistors that have short channel effects (L=0.9-10um). This is explained by the

In this work, we report a novel Indium Arsenide-on-insulator (InAsOI) FinFET platform designed with record high aspect ratio that favor the use of the devices as charge sensors. InAs has very high mobility among III-V semiconductors and an intrinsic surfac ...

An important building block for on-chip photonic applications is a scaled emitter. Whispering gallery mode cavities based on III-Vs on Si allow for small device footprints and lasing with low thresholds. However, multimodal emission and wavelength stabilit ...

Coherent on-chip light sources are essential components for integrated photonics, enabling interference-based logic, high-fidelity signal routing, and precision sensing. Two-dimensional (2D) materials offer a promising platform for realizing ultracompact light sources because they combine strong excitonic effects, broad material compatibility, and efficient electrical tunability. However, achieving simultaneous optical performance and stable electrical controllability is hindered by cavity geometry and elec

Conventional lasers typically support a well‐defined comb of modes. Coupling many resonators together to form larger complex cavities enables the design of the spatial and spectral distribution of modes, for sensitive and controllable on‐chip light sources ...

This work reports on memory applications of punch-through impact ionization single-transistor latch (PIMOS), showing abrupt current switching (3-10mV/dec.) as well as hysteresis in both ID(VDS) and ID(VGS). A capacitor-less 1PIMOS - 1 MOSFET DRAM memory is ...

Several technologies with sub-lithographic features are targeting the fabrication of crossbar memories in which the nanowire decoder is playing a major role. In this paper, we suggest a way to reduce the decoder size and keep it defect tolerant by using mu ...

Oscillator networks are known for their interesting collective behavior such as frequency locking, phase locking, and synchronization. Compared to other artificial neural network implementations, timing rather than amplitude information is used for computa ...

Kirsten Emilie Moselund

Chattez avec Graph Search

Fabrication and Characterization of Gate-All-Around Silicon Nanowires on Bulk Silicon

Image sensitive spectral response of semiconductor random network lasers

Dopant-Induced Modifications of GaxIn(1-x)P Nanowire-Based p-n Junctions Monolithically Integrated on Si(111)

The high-mobility bended n-channel silicon nanowire transistor

Plasma etching for fabrication of complex nanophotonic lasers from bonded InP semiconductor layers

Variability-Aware Design of Multilevel Logic Decoders for Nanoscale Crossbar Memories

NANOSIL network of excellence--silicon-based nanostructures and nanodevices for long-term nanoelectronics applications

Prospects for logic-on-a-wire

Review: III-V infrared emitters on Si: fabrication concepts, device architectures and down-scaling with a focus on template-assisted selective epitaxy

Three-dimensional electronic devices fabricated on a top-down silicon nanowire platform

Surface Lattice Resonance Lasers with Epitaxial InP Gain Medium

Time-Delay Encoded Image Recognition in a Network of Resistively Coupled VO2 on Si Oscillators

Abrupt current switching due to impact ionization effects in Omega-MOSFET on low doped bulk silicon

Monolithically integrated catalyst-free High Aspect Ratio InAs-On-Insulator (InAsOI) FinFETs for pH sensing

Single-Mode Emission in InP Microdisks on Si Using Au Antenna

Coherent light emission and electrical tuning of WS2-WSe2 interlayer excitons

Designed Semiconductor Network Random Lasers

DRAM Based on Hysteresis in Impact Ionization Single-Transistor-Latch

Fault-Tolerant Multi-Level Logic Decoder for Nanoscale Crossbar Memory Arrays

Resistive Coupled VO2 Oscillators for Image Recognition