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Vladimir Iakovlev

Cette personne a quitté l’EPFL

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Publications associées (46)

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Recent progress in wafer-fused VECSELs emitting in the 1310 nm waveband

Elyahou Kapon, Alexandru Mereuta, Alexei Sirbu, Vladimir Iakovlev, Andrei Caliman, Nicolas Volet

Over the last years we have continuously improved the performance of 1300 nm band VECSELs with wafer fused gain mirrors in the intra-cavity diamond and the flip-chip heat dissipation configurations. In this work we present recent results for gain mirrors t ...

Spie-Int Soc Optical Engineering2015

>25 Gbps direct modulation and data transmission with 1310 nm waveband wafer fused VCSELs

Elyahou Kapon, Alexandru Mereuta, Alexei Sirbu, Vladimir Iakovlev, Andrei Caliman

25 Gb/s transmission over 10 km of standard single mode fiber is demonstrated for 1300 nm wafer fused InP/GaAs VCSELs with increased strain in quantum wells and higher output coupling from the cavity. ...

Ieee2016

Double-diamond high-contrast-gratings vertical external cavity surface emitting laser

Elyahou Kapon, Alexei Sirbu, Vladimir Iakovlev, Pascal Gallo

A new design of vertical external cavity surface emitting laser (VECSEL) with diamond-based high contrast gratings is proposed. The self-consistent model of laser operation has been calibrated based on experimental results and used to optimize the new prop ...

Iop Publishing Ltd2014

Wafer-fused heterostructures : application to vertical cavity surface-emitting lasers emitting in the 1310 nm band

Elyahou Kapon, Alexandru Mereuta, Alexei Sirbu, Vladimir Iakovlev, Andrei Caliman, Grigore Suruceanu

Currently, wafer-fusion technology represents an effective technique for enhancing the performance of long-wavelength vertical cavity surface-emitting lasers (VCSELs) based on classical double heterostructures with multi-quantum well active regions. Using ...

Institute of Physics2011

Recent progress in wafer-fused VECSELs emitting in the 1310nm and 1550nm bands

Elyahou Kapon, Alexandru Mereuta, Alexei Sirbu, Vladimir Iakovlev, Andrei Caliman, Nicolas Volet, Kamil Pawel Pierscinski

Recent developments of wafer-fused long-wavelength VECSELs resulted in reaching record high CW output power of 6.6 W at 1300 nm and a coherence length longer than 5 km in fiber and 1 Watt of output power in single frequency regime at 1550 nm. First wafer-f ...

SPIE, Vol. 8606, pp. , 20132013

Numerical Analysis of Mode Discrimination by Intracavity Patterning in Long-Wavelength Wafer-Fused Vertical-Cavity Surface-Emitting Lasers

Elyahou Kapon, Alexandru Mereuta, Alexei Sirbu, Vladimir Iakovlev, Andrei Caliman, Nicolas Volet

This paper presents an extensive numerical analysis of 1.3-mu m wavelength wafer-fused vertical-cavity surface-emitting lasers (VCSELs) incorporating intracavity patterning. Using a 3-D, self-consistent model of the physical phenomena in VCSELs, supported ...

Institute of Electrical and Electronics Engineers2014

750 nm 1.5 W frequency-doubled semiconductor disk laser with a 44 nm tuning range

Elyahou Kapon, Alexei Sirbu, Vladimir Iakovlev

We demonstrate 1.5 W of output power at the wavelength of 750 nm by intracavity frequency doubling a wafer-fused semiconductor disk laser diode-pumped at 980 nm. An optical-to-optical efficiency of 8.3% was achieved using a bismuth borate crystal. The wave ...

Optical Society of America2015

3.125Gb/s modulation up to 70°C using 1.3µm VCSELs fabricated with localized wafer fusion for 10GBASE LX4 applications

Elyahou Kapon, Alok Rudra, Alexandru Mereuta, Vladimir Iakovlev, Andrei Caliman, Grigore Suruceanu

2006

Polarization mode structure in long-wavelength wafer-fused vertical-cavity surface-emitting lasers

Elyahou Kapon, Alexandru Mereuta, Alexei Sirbu, Vladimir Iakovlev, Andrei Caliman, Grigore Suruceanu, Nicolas Volet

Applications of long-wavelength (lambda > 1 mu m) vertical-cavity surface-emitting lasers (VCSELs) generally require close control over wavelength and polarization of the emitted light. In most cases, single mode and polarization stable lasing is desired. ...

Spie-Int Soc Optical Engineering, Po Box 10, Bellingham, Wa 98227-0010 Usa2012

Optical Injection Locking of Polarization Modes in VCSELs Emitting at 1.3 μm Wavelength

Elyahou Kapon, Alexandru Mereuta, Alexei Sirbu, Vladimir Iakovlev, Andrei Caliman, Grigore Suruceanu, Elodie Lamothe, Christopher Michael Long

2013

Recent Progress in Wafer-Fused VCSELs Emitting in the 1550-nm Band

Elyahou Kapon, Alexandru Mereuta, Alexei Sirbu, Vladimir Iakovlev, Andrei Caliman, Grigore Suruceanu

Record-high fundamental mode output power of 1.5 mW at 100 degrees C is achieved with InAlGaAs-InP/AlGaAs-GaAs 1550 nm wavelength vertical cavity surface emitting lasers (VCSELs) produced by a modified wafer fusion technique. A broad wavelength setting on ...

Ieee Service Center, 445 Hoes Lane, Po Box 1331, Piscataway, Nj 08855-1331 Usa2011

14XX nm-wavelength electrically-pumped VECSELs fabricated by wafer fusion

Elyahou Kapon, Alexandru Mereuta, Alexei Sirbu, Vladimir Iakovlev, Andrei Caliman, Kamil Pawel Pierscinski

We report on the design, fabrication and characterization of electrically pumped vertical external cavity surface emitting lasers (EP-VECSELs) emitting at 1470 nm. We demonstrate 6.2 mW of CW output power, which represents the highest power value reported ...

Optical Society of America2013

Optical injection locking of transverse modes in 1.3-mu m wavelength coupled-VCSEL arrays

Elyahou Kapon, Benjamin Dwir, Alexandru Mereuta, Alexei Sirbu, Vladimir Iakovlev, Andrei Caliman, Lukas Mutter, Christopher Michael Long

Optical injection locking of 1.3-mu m phase-locked VCSEL arrays defined by patterned tunnel junctions and wafer fusion is investigated experimentally and theoretically. The impact of the overlap between the master laser injection beam and the injected mode ...

Optical Society of America2014

Polarization modes in long-wavelength Vertical-Cavity Surface-Emitting Lasers (VCSELs) and VCSEL-arrays

Elyahou Kapon, Alexandru Mereuta, Alexei Sirbu, Vladimir Iakovlev, Andrei Caliman, Elodie Lamothe, Lukas Mutter

Spatial transverse modes and polarization states are experimentally studied in single vertical cavity surface emitting lasers (VCSELs) and phased-locked VCSEL arrays emitting at 1.3 mu m wavelength. Analysis of the polarization-resolved near fields, far fi ...

Spie-Int Soc Optical Engineering, Po Box 10, Bellingham, Wa 98227-0010 Usa2010

High-Performance Single-Mode VCSELs in the 1310-nm Waveband

Elyahou Kapon, Alok Rudra, Alexandru Mereuta, Vladimir Iakovlev, Andrei Caliman, Grigore Suruceanu

2005

1310 nm wafer fused VCSELs - a new generation of uncooled 10 Gbps telecom lasers

Elyahou Kapon, Alexandru Mereuta, Alexei Sirbu, Vladimir Iakovlev, Andrei Caliman, Grigore Suruceanu, Zlatko Mickovic, Dalila Ellafi

1310 nm-band wafer-fused VCSELs demonstrate record low 10 Gbps modulation current of 6 mA at temperatures from RT to 70 °C. Reliability studies demonstrate the suitability of this technology in commercial photonic systems. © 2012 IEEE. ...

2012

Cavity Mode—Gain Peak Tradeoff for 1320-nm Wafer-Fused VCSELs With 3-mW Single-Mode Emission Power and 10-Gb/s Modulation Speed Up to 70° C''

Elyahou Kapon, Alexandru Mereuta, Vladimir Iakovlev, Andrei Caliman, Grigore Suruceanu

2007

85 W VECSEL output at 1270 nm with conversion efficiency of 59 %

Elyahou Kapon, Alexandru Mereuta, Alexei Sirbu, Vladimir Iakovlev, Andrei Caliman

We report on 1270 nm vertical-external-cavity surface-emitting lasers (VECSELs) with up to 59% conversion efficiency and maximum output power of 8.5 W (pump limited), at 5 degrees C heat sink temperature. These VECSELs comprised wafer-fused gain mirrors in ...

Optical Society of America2015

Polarisation stabilisation of vertical cavity surface emitting lasers by minimally invasive focused electron beam triggered chemistry

Elyahou Kapon, Alexandru Mereuta, Alexei Sirbu, Vladimir Iakovlev, Andrei Caliman, Ivo Utke

2011

Laser a cavite verticale et a emission par surface

Elyahou Kapon, Alok Rudra, Alexei Sirbu, Vladimir Iakovlev

A tunable Fabry-Perot vertical cavity photonic device and a method of its fabrication are presented. The device comprises top and bottom semiconductor DBR stacks and a tunable air-gap cavity therebetween. The air-gap cavity is formed within a recess in a s ...

2005