Publications by Vladimir Iakovlev

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Direct modulation at > 25 Gbps is achieved with 1310 nm wavelength wafer fused VCSELs by adjusting the strain in the quantum well active region and the cavity photon lifetime. 25 + Gbps large signal modulation with 10(-12) BER at 1310 nm across 10 km of st ...

We present the static and optical injection response of wafer-fused long-wavelength VCSELs with and without intracavity patterning. It is found that the extra optical cavity patterning increases the gain anisotropy between orthogonal polarization modes, in ...

10-Gb/s modulation speed and transmission over 10-km SM fiber with BER < 10(-11) up to 100 degrees C temperature are achieved with optimized wafer-fused GaAs/AlGaAs-InP/InAlGaAs VCSELs incorporating re-grown tunnel junction. These VCSELs operate in the 1310-nm waveband and emit more than 1-mW single mode power in the full temperature range. (C) 2009 Optical Society of America

Emission wavelength setting of 1310nm-waveband VCSELs designed for coarse wavelength division multiplexing (CWDM) 4x10 Gbps fiber-optics transmission can be controlled thanks to the wafer fusion fabrication approach. This approach allows performing the cav ...

Three means of optical confinement imposed on InAlGaAs/InP 1.3 mu m VCSEL arrays are investigated with self-consistent numerical model of laser operation. Laterally patterned tunnel junction (TJ), in-build guiding realized with air-gap patterning, and anti ...

Mode control in wafer-fused 1.3 mu m wavelength coupled-VCSEL arrays is achieved by cavity structuring and investigated by spectrally resolved near- and far-field measurements. Improved mode discrimination is attained by combining index- and gain-patterning. (C)2010 Optical Society of America

We report the injection locking of specific spatial modes and polarization modes of 1.3 mu m wavelength vertical surface emitting lasers (VCSELs) in single-aperture devices and phase-coupled arrays. The optical injection is realized using a master laser (M ...

Recent progress in the fabrication and performance of 1.3-mu m 10-Gb/s, low power consumption wafer-fused VCSELs grown by MOVPE under nitrogen atmosphere are presented and discussed. By optimization of the growth conditions and implementation of a cavity a ...

Record fundamental mode output power of 8mW at 0 degrees C and 6.5mW at room temperature is achieved with wafer-fused VCSELs incorporating regrown tunnel junction and emitting at the 1550nm waveband. (C) 2009 Optical Society of America

We report on the single mode emission power enhancement of 1.3-mu m VCSELs by adjusting the reflectivity of the top GaAs-based DBR for output coupling optimization using selective removal of Bragg reflector layers. Devices with record single mode power of ...

We report for the first time on the performance of 1300 nm waveband semiconductor disc lasers (SDLs) with wafer fused gain mirrors that implement intracavity diamond and flip-chip heat dissipation schemes based on the same gain material. With a new type of ...

The modulation characteristics of wafer-fused long-wavelength vertical-cavity surface-emitting lasers (VCSELs) for multichannel microwave-band analog signal transmission were investigated within a large-signal behavioral model based on a commercial microwave electronic computer-aided design (E-CAD) tool. To enhance the fitting precision, a step-by-step extraction procedure is implemented numerically, optimizing at each step no more than five parameters. The simulation and experimental results of intermodula

We demonstrate 2-mu m wavelength, wafer-fused InGa(Al)As/InP-AlGaAs/GaAs vertical-cavity surface-emitting lasers (VCSELs) emitting single-mode power of 0.5 mW at room-temperature with a threshold current of 4mA and side-mode suppression ratio of over 30 dB. Emission wavelength can be continuously tuned with current by similar to 5 nm without mode hopping with a tuning rate of 0.31 nm/mA. These features demonstrate the long wavelength VCSELs potential for gas sensing and other optical spectroscopy applicatio

Over the last years we have continuously improved the performance of 1300 nm band VECSELs with wafer fused gain mirrors in the intra-cavity diamond and the flip-chip heat dissipation configurations. In this work we present recent results for gain mirrors t ...

A new generation of 10 Gb/s wafer fused VCSELS show high single mode output in excess of 2mW at 80 degrees C (6mW at 20 degrees C) in the 1310 nm band and 1.5mW at 80 degrees C (4 mW at 20 degrees C) in the 1550 nm band. Error free transmission over 10 km of standard single mode fiber was performed with less than 1 dB penalty.

Polarization mode control is enhanced in wafer-fused verticalcavity surface-emitting lasers emitting at 1310 nm wavelength by etching two symmetrically arranged arcs above the gain structure within the laser cavity. The intracavity patterning introduces bi ...

25 Gb/s transmission over 10 km of standard single mode fiber is demonstrated for 1300 nm wafer fused InP/GaAs VCSELs with increased strain in quantum wells and higher output coupling from the cavity. ...

Using tunnel junction patterning and double wafer fusion, we demonstrate phase-locked arrays of VCSELs emitting at the 1300 nm waveband. CW powers as high as 10 mW and coherent beams are demonstrated for various array configurations. (C) 2009 Optical Society of America

A new design of vertical external cavity surface emitting laser (VECSEL) with diamond-based high contrast gratings is proposed. The self-consistent model of laser operation has been calibrated based on experimental results and used to optimize the new prop ...

Currently, wafer-fusion technology represents an effective technique for enhancing the performance of long-wavelength vertical cavity surface-emitting lasers (VCSELs) based on classical double heterostructures with multi-quantum well active regions. Using ...

Vladimir Iakovlev

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25 Gbps direct modulation and 10 km data transmission with 1310 nm waveband wafer fused VCSELs

Optical Injection and Lasing Dynamics in Long-Wavelength VCSELs With Intracavity Patterning

10Gb/s and 10km error-free transmission up to 100ºC with 1.3µm wafer-fused VCSELs

Wavelength control in fabrication of wafer fused VCSELs emitting in the 1310 nm waveband

Spatial-Mode Discrimination in Guided and Antiguided Arrays of Long-Wavelength VCSELs

Mode Control of 1.3 ∞m Wavelength Coupled VCSEL Arrays by Cavity Structuring

Optical injection locking of polarization modes and spatial modes in single-aperture VCSELs and VCSEL arrays emitting at 1.3 mu m

Fabrication and performance of 1.3-mu m 10-Gb/s CWDM wafer-fused VCSELs grown by MOVPE

8 mW Fundamental Mode Output of Wafer-Fused VCSELs Emitting in the 1550-nm Band

Increasing single mode power of 13-μm VCSELs by output coupling optimization

High performance wafer-fused semiconductor disk lasers emitting in the 1300 nm waveband

Performances of Microwave-Band Analog Signal Transmission Using Wafer-Fused Long Wavelength VCSELs

2-μm wavelength range InGa(Al)As/InP-AlGaAs/GaAs wafer fused VCSELs for spectroscopic applications

Recent progress in wafer-fused VECSELs emitting in the 1310 nm waveband

10 gbps VCSELs with high single mode output in 1310nm and 1550 nm wavelength bands

Polarization mode control of long-wavelength VCSELs by intracavity patterning

>25 Gbps direct modulation and data transmission with 1310 nm waveband wafer fused VCSELs

1.3-mu m Wavelength Coupled VCSEL Arrays Employing Patterned Tunnel Junction

Double-diamond high-contrast-gratings vertical external cavity surface emitting laser

Wafer-fused heterostructures : application to vertical cavity surface-emitting lasers emitting in the 1310 nm band