Julien Dorsaz

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Publications associées (24)

Lattice-matched distributed Bragg reflectors for nitride-based vertical cavity surface emitting lasers

Jean-François Carlin, Marc Ilegems, Julien Dorsaz, Nicolas Grandjean, Raphaël Butté, Eric Feltin

Very narrow spontaneous emission (Deltalambda similar to 0.5 nm), corresponding to a quality factor Q in excess of 800, has been obtained under continuous-wave excitation at room temperature with an AlInN/GaN monolithic microcavity. The structure is made o ...

2005

Crack-free fully epitaxial nitride microcavity using highly reflective AllnN/GaN Bragg mirrors

Jean-François Carlin, Marc Ilegems, Julien Dorsaz, Nicolas Grandjean, Raphaël Butté, Eric Feltin

We report the growth over 2 in. sapphire substrates of crack-free fully epitaxial nitride-based microcavities using two highly reflective lattice-matched AlInN/GaN distributed Bragg reflectors (DBRs). The optical cavity is formed by an empty 3lambda/2 GaN ...

2005

Recent progress in the growth of highly reflective nitride-based distributed Bragg reflectors and their use in microcavities

Jean-François Carlin, Marc Ilegems, Julien Dorsaz, Nicolas Grandjean, Raphaël Butté, Eric Feltin, Gabriel Christmann

The growth of highly-reflective nitride-based distributed Bragg reflectors (DBRs) and their use in vertical cavity structures is reviewed. We discuss the various nitride material systems employed to design Bragg mirrors and microcavities, namely the Al-x(G ...

2005

Selective oxidation of AlInN layers for current confinement in III-nitride devices

Jean-François Carlin, Marc Ilegems, Julien Dorsaz, Nicolas Grandjean

Highly selective oxidation of an AlInN interlayer buried in a GaN matrix is demonstrated. This technique was successfully applied to form current apertures in III-nitride light-emitting diodes (LEDs). GaN LEDs were grown by metal-organic vapor phase epitax ...

2005

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