Julien Dorsaz

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Related publications (24)

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Static and dynamic properties of multi-section InGaN-based laser diodes

Nicolas Grandjean, Jean-François Carlin, Dmitri Boiko, Julien Dorsaz, Antonino Francesco Castiglia, Luca Alex Milo Sulmoni, Xi Zeng, Jean-Michel Jacques Lamy

We have studied multi-section InGaN multiple-quantum-well (MQW) laser diodes grown on c-plane freestanding GaN substrate consisting of an absorber section (AS) and an amplifier gain section. As a result of the interplay between external bias applied to the ...

Amer Inst Physics2012

Crack-free highly reflective AlInN/AlGaN bragg mirrors for UV applications

Nicolas Grandjean, Jean-François Carlin, Marc Ilegems, Eric Feltin, Raphaël Butté, Gabriel Christmann, Julien Dorsaz

We report the growth of highly reflective distributed Bragg reflectors (DBRs) in the UV region using the Al0.85In0.15N/Al0.2Ga0.8N lattice-matched system. The DBRs were deposited on nearly strain-free Al0.2Ga0.8N templates to avoid strain-induced structura ...

2006

Selective oxidation and selective etching of allnn layers for manufacturing group iii nitride semiconductor devices

Jean-François Carlin, Julien Dorsaz

A method for including an oxide region in a layered structure being grown epitaxially on a substrate, comprising the steps of epitaxially forming a Group III-nitride precursor layer, and selectively oxidizing the precursor layer, thereby forming the oxide ...

2007

Self-Pulsation at Zero Absorber Bias in GaN-Based Multisection Laser Diodes

Nicolas Grandjean, Jean-François Carlin, Julien Dorsaz, Luca Alex Milo Sulmoni

We study the influence of pump current and absorber bias voltage on the pulse width and frequency of sustained pulsation in GaN-based multisection laser diodes. The observed frequencies and pulse widths range from 1.5 to 4.5GHz and 90 to 18 ps, respectivel ...

2011