Publications de Richard Bartlome

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The role of secondary gas-phase reactions during plasma-enhanced chemical vapor deposition of microcrystalline silicon is a controversial subject. In this paper, we show that the enhancement of such reactions is associated with the improvement of material properties of absorber layers deposited at high constant rate. We detect powder, a product of secondary gas-phase reactions, via infrared laser absorption spectroscopy, laser light scattering, and optical emission spectroscopy. As the powder formation is i

In silicon heterojunction solar cells, the passivation of the crystalline silicon wafer surfaces and fabrication of emitter and back surface field are all performed by intrinsic and doped amorphous silicon thin layers, usually deposited by plasma-enhanced chemical vapor deposition (PECVD). Since the properties of materials deposited by PEVCD are directly linked to the plasma properties, plasma diagnostics are very useful tools to optimize such devices. A novel diagnostic has been developed to measure in-sit

Several aspects of the science and technology of thin film silicon for photovoltaic applications will be presented. The potential advantages of this technology over crystalline wafer technology will be discussed. A basic understanding of the material properties of thin film silicon layers enables to assess their potential and limitations when used in photovoltaic devices. A brief review of the production technology for thin films will be given with particular emphasis on amorphous and microcrystalline silic

Hydrogenated microcrystalline silicon (μc-Si:H) growth by very high frequency plasma-enhanced chemical vapor deposition (VHF-PECVD) is studied in an industrial-type parallel plate KAI reactor. Combined plasma and material characterization techniques allow ...

In silicon heterojunction solar cells, thin amorphous silicon layers passivate the crystalline silicon wafer surfaces. By using in situ diagnostics during plasma-enhanced chemical vapor deposition (PECVD), the authors report how the passivation quality of such layers directly relate to the plasma conditions. Good interface passivation is obtained from highly depleted silane plasmas. Based upon this finding, layers deposited in a large-area very high frequency (40.68 MHz) PECVD reactor were optimized for het

Silane and hydrogen discharges are widely used for the deposition of silicon thin film solar cells in large area plasmaenhanced chemical vapor deposition reactors. In the case of microcrystalline silicon thin film solar cells, it is of crucial importance t ...

In silicon heterojunction solar cells, the passivation of the crystalline silicon wafer surfaces and fabrication of emitter and back surface field are all performed by intrinsic and doped amorphous silicon thin layers, usually deposited by plasma-enhanced chemical vapor deposition (PECVD). By using in-situ diagnostics during PECVD, it is found that the passivation quality of such layers directly relate to the plasma conditions, especially on the silane depletion fraction. Good interface passivation is indee

We review laser applications in thin-film photovoltaics (thin-film Si, CdTe, and Cu(In,Ga)Se2 solar cells). Lasers are applied in this growing field to manufacture modules, to monitor Si deposition processes, and to characterize opto-electrical properties ...

The silane dissociation efficiency, or depletion fraction, is an important plasma parameter by means of which the film growth rate and the amorphous-to-microcrystalline silicon transition regime can be monitored in situ. In this letter we implement a homeb ...

We present a laser scribing system for mid-size photovoltaic modules (up to 410 × 520 mm2) implementing a movable diode-pumped solid state laser. In this configuration, the heavy large-area photovoltaic module does not need to be displaced, allowing for fa ...

We present two laser systems to monitor plasma conditions in a plasma-enhanced chemical vapor deposition chamber. The first optical system is a high-resolution quantum cascade laser-based infrared absorption spectrometer designed to measure the input silan ...

We clarify the difference between the SiH4 consumption efficiency eta and the SiH4 depletion fraction D, as measured in the pumping line and the actual reactor of an industrial plasma-enhanced chemical vapor deposition system. In the absence of significant ...

Richard Bartlome

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Impact of secondary gas-phase reactions on microcrystalline silicon solar cells deposited at high rate

Optimization of high efficiency silicon heterojunction solar cells using silane-plasma diagnostics

An Introduction To The Technology Of Thin Film Silicon Photovoltaics

Microcrystalline and micromorph device improvements through combined plasma and material characterization techniques

The silane depletion fraction as an indicator for the amorphous/crystalline silicon interface passivation quality

Optical emission spectroscopy to diagnose powder formation in SiH4-H2 discharges

Silane plasma diagnostics for high-efficiency silicon heterojunction solar cells

Laser applications in thin-film photovoltaics

Infrared laser-based monitoring of the silane dissociation during deposition of silicon thin films

Versatile thin-film photovoltaic laser scribing system

Low-temperature plasma-deposited silicon epitaxial films: Growth and properties

Laser-based plasma diagnostics for PECVD of silicon thin films

Practical silicon deposition rules derived from silane monitoring during plasma-enhanced chemical vapor deposition

Time-resolved SiH4 density inside a chemical vapor deposition system: gas flow dynamics and glow discharge control