Publications de Alexei Sirbu | EPFL Graph Search

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A novel 1550 nm optically pumped VECSEL based on wafer fused InAlGaAs/InP-AlGaAs/GaAs half cavity shows a high CW output of 2.28 W at room temperature and 250 mW at 75 degrees C. (C) 2008 Optical Society of America

Using tunnel junction patterning and double wafer fusion, we demonstrate phase-locked arrays of VCSELs emitting at the 1300 nm waveband. CW powers as high as 10 mW and coherent beams are demonstrated for various array configurations. (C) 2009 Optical Society of America

A new design of vertical external cavity surface emitting laser (VECSEL) with diamond-based high contrast gratings is proposed. The self-consistent model of laser operation has been calibrated based on experimental results and used to optimize the new prop ...

Currently, wafer-fusion technology represents an effective technique for enhancing the performance of long-wavelength vertical cavity surface-emitting lasers (VCSELs) based on classical double heterostructures with multi-quantum well active regions. Using ...

A 1.6 mu m mode-locked Raman fiber laser pumped by a 1480 nm semiconductor disk laser is demonstrated. Watt-level core pumping of the single-mode fiber Raman lasers with low-noise disk lasers together with semiconductor saturable absorber mirror mode locki ...

Recent developments of wafer-fused long-wavelength VECSELs resulted in reaching record high CW output power of 6.6 W at 1300 nm and a coherence length longer than 5 km in fiber and 1 Watt of output power in single frequency regime at 1550 nm. First wafer-f ...

A mode-locked Raman fiber laser pumped by 1.3 mu m semiconductor disk laser is demonstrated. Direct Watt-level core-pumping of the single-mode fiber Raman lasers and amplifiers with low-noise disk lasers is demonstrated to represent a highly practical solu ...

A single frequency wafer-fused semiconductor disk laser at 1.56 mu m with 1 watt of output power and a coherence length over 5 km in fiber is demonstrated. The result represents the highest output power reported for a narrow-line semiconductor disk laser o ...

Building coarse wavelength division multiplexing (WDM), 4x10 Gbps VCSEL transmitter modules has the promise for dramatic decreasing power consumption. Over the last years, we have demonstrated continuous improvements of parameters and reliability of wafer fused long-wavelength VCSELs. Progress and challenges in industrial fabrication of wafer-fused VCSELs emitting in the 1310 nm band for high speed WDM applications are reviewed.

This paper presents an extensive numerical analysis of 1.3-mu m wavelength wafer-fused vertical-cavity surface-emitting lasers (VCSELs) incorporating intracavity patterning. Using a 3-D, self-consistent model of the physical phenomena in VCSELs, supported ...

Applications of long-wavelength (lambda > 1 mu m) vertical-cavity surface-emitting lasers (VCSELs) generally require close control over wavelength and polarization of the emitted light. In most cases, single mode and polarization stable lasing is desired. ...

Record-high fundamental mode output power of 1.5 mW at 100 degrees C is achieved with InAlGaAs-InP/AlGaAs-GaAs 1550 nm wavelength vertical cavity surface emitting lasers (VCSELs) produced by a modified wafer fusion technique. A broad wavelength setting on ...

We report on the design, fabrication and characterization of electrically pumped vertical external cavity surface emitting lasers (EP-VECSELs) emitting at 1470 nm. We demonstrate 6.2 mW of CW output power, which represents the highest power value reported ...

The invention refers to a method of manufacturing an optoelectronic device and in particular a method of manufacturing a vertical cavity surface emitting device incorporating wafer fused reflectors. ...

Optical injection locking of 1.3-mu m phase-locked VCSEL arrays defined by patterned tunnel junctions and wafer fusion is investigated experimentally and theoretically. The impact of the overlap between the master laser injection beam and the injected mode ...

Spatial transverse modes and polarization states are experimentally studied in single vertical cavity surface emitting lasers (VCSELs) and phased-locked VCSEL arrays emitting at 1.3 mu m wavelength. Analysis of the polarization-resolved near fields, far fi ...

1310 nm-band wafer-fused VCSELs demonstrate record low 10 Gbps modulation current of 6 mA at temperatures from RT to 70 °C. Reliability studies demonstrate the suitability of this technology in commercial photonic systems. © 2012 IEEE. ...

A tunable Fabry-Perot vertical cavity photonic device and a method of its fabrication are presented. The device comprises top and bottom semiconductor DBR stacks and a tunable air-gap cavity therebetween. The air-gap cavity is formed within a recess in a s ...

Alexei Sirbu

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Novel 1550 nm Vertical External Cavity Surface-Emitting Lasers with 2.28 W RT CW Output

1.3-mu m Wavelength Coupled VCSEL Arrays Employing Patterned Tunnel Junction

Double-diamond high-contrast-gratings vertical external cavity surface emitting laser

Wafer-fused heterostructures : application to vertical cavity surface-emitting lasers emitting in the 1310 nm band

Raman fiber laser pumped by a semiconductor disk laser and mode locked by a semiconductor saturable absorber mirror

Recent progress in wafer-fused VECSELs emitting in the 1310nm and 1550nm bands

1.38-μm mode-locked Raman fiber laser pumped by semiconductor disk laser

156 µm 1 watt single frequency semiconductor disk laser

Progress and challenges in industrial fabrication of wafer-fused VCSELs emitting in the 1310 nm band for high speed wavelength division multiplexing applications

Numerical Analysis of Mode Discrimination by Intracavity Patterning in Long-Wavelength Wafer-Fused Vertical-Cavity Surface-Emitting Lasers

Polarization mode structure in long-wavelength wafer-fused vertical-cavity surface-emitting lasers

Optical Injection Locking of Polarization Modes in VCSELs Emitting at 1.3 μm Wavelength

Recent Progress in Wafer-Fused VCSELs Emitting in the 1550-nm Band

14XX nm-wavelength electrically-pumped VECSELs fabricated by wafer fusion

Vertical cavity surface emitting devices incorporating wafer fused reflectors

Optical injection locking of transverse modes in 1.3-mu m wavelength coupled-VCSEL arrays

Polarization modes in long-wavelength Vertical-Cavity Surface-Emitting Lasers (VCSELs) and VCSEL-arrays

1310 nm wafer fused VCSELs - a new generation of uncooled 10 Gbps telecom lasers

Polarisation stabilisation of vertical cavity surface emitting lasers by minimally invasive focused electron beam triggered chemistry

Laser a cavite verticale et a emission par surface