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Alexei Sirbu

Cette personne a quitté l’EPFL

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Publications associées (51)

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3 W of 650 nm red emission by frequency doubling of wafer-fused semiconductor disk laser

Elyahou Kapon, Alexandru Mereuta, Alexei Sirbu

3 W at genuine red wavelength of 650 nm has been achieved from a semiconductor disk laser by frequency doubling. An InP based active medium was fused with a GaAs/AlGaAs distributed Bragg reflector resulting in an integrated monolithic gain mirror. 6.6 W of ...

Optical Society of America2010

Polarization mode control of long-wavelength VCSELs by intracavity patterning

Elyahou Kapon, Benjamin Dwir, Alexandru Mereuta, Alexei Sirbu, Vladimir Iakovlev, Andrei Caliman, Zlatko Mickovic, Christopher Michael Long

Polarization mode control is enhanced in wafer-fused verticalcavity surface-emitting lasers emitting at 1310 nm wavelength by etching two symmetrically arranged arcs above the gain structure within the laser cavity. The intracavity patterning introduces bi ...

Optical Soc Amer2016

Recent progress in wafer-fused VECSELs emitting in the 1310 nm waveband

Elyahou Kapon, Alexandru Mereuta, Alexei Sirbu, Vladimir Iakovlev, Andrei Caliman, Nicolas Volet

Over the last years we have continuously improved the performance of 1300 nm band VECSELs with wafer fused gain mirrors in the intra-cavity diamond and the flip-chip heat dissipation configurations. In this work we present recent results for gain mirrors t ...

Spie-Int Soc Optical Engineering2015

>25 Gbps direct modulation and data transmission with 1310 nm waveband wafer fused VCSELs

Elyahou Kapon, Alexandru Mereuta, Alexei Sirbu, Vladimir Iakovlev, Andrei Caliman

25 Gb/s transmission over 10 km of standard single mode fiber is demonstrated for 1300 nm wafer fused InP/GaAs VCSELs with increased strain in quantum wells and higher output coupling from the cavity. ...

Ieee2016

Double-diamond high-contrast-gratings vertical external cavity surface emitting laser

Elyahou Kapon, Alexei Sirbu, Vladimir Iakovlev, Pascal Gallo

A new design of vertical external cavity surface emitting laser (VECSEL) with diamond-based high contrast gratings is proposed. The self-consistent model of laser operation has been calibrated based on experimental results and used to optimize the new prop ...

Iop Publishing Ltd2014

Wafer-fused heterostructures : application to vertical cavity surface-emitting lasers emitting in the 1310 nm band

Elyahou Kapon, Alexandru Mereuta, Alexei Sirbu, Vladimir Iakovlev, Andrei Caliman, Grigore Suruceanu

Currently, wafer-fusion technology represents an effective technique for enhancing the performance of long-wavelength vertical cavity surface-emitting lasers (VCSELs) based on classical double heterostructures with multi-quantum well active regions. Using ...

Institute of Physics2011

Raman fiber laser pumped by a semiconductor disk laser and mode locked by a semiconductor saturable absorber mirror

Elyahou Kapon, Alexei Sirbu

A 1.6 mu m mode-locked Raman fiber laser pumped by a 1480 nm semiconductor disk laser is demonstrated. Watt-level core pumping of the single-mode fiber Raman lasers with low-noise disk lasers together with semiconductor saturable absorber mirror mode locki ...

Optical Society of America2010

Recent progress in wafer-fused VECSELs emitting in the 1310nm and 1550nm bands

Elyahou Kapon, Alexandru Mereuta, Alexei Sirbu, Vladimir Iakovlev, Andrei Caliman, Nicolas Volet, Kamil Pawel Pierscinski

Recent developments of wafer-fused long-wavelength VECSELs resulted in reaching record high CW output power of 6.6 W at 1300 nm and a coherence length longer than 5 km in fiber and 1 Watt of output power in single frequency regime at 1550 nm. First wafer-f ...

SPIE, Vol. 8606, pp. , 20132013

1.38-μm mode-locked Raman fiber laser pumped by semiconductor disk laser

Elyahou Kapon, Alexandru Mereuta, Alexei Sirbu

A mode-locked Raman fiber laser pumped by 1.3 mu m semiconductor disk laser is demonstrated. Direct Watt-level core-pumping of the single-mode fiber Raman lasers and amplifiers with low-noise disk lasers is demonstrated to represent a highly practical solu ...

Optical Society of America2010

156 µm 1 watt single frequency semiconductor disk laser

Elyahou Kapon, Alexandru Mereuta, Alexei Sirbu

A single frequency wafer-fused semiconductor disk laser at 1.56 mu m with 1 watt of output power and a coherence length over 5 km in fiber is demonstrated. The result represents the highest output power reported for a narrow-line semiconductor disk laser o ...

Optical Society of America2013

Numerical Analysis of Mode Discrimination by Intracavity Patterning in Long-Wavelength Wafer-Fused Vertical-Cavity Surface-Emitting Lasers

Elyahou Kapon, Alexandru Mereuta, Alexei Sirbu, Vladimir Iakovlev, Andrei Caliman, Nicolas Volet

This paper presents an extensive numerical analysis of 1.3-mu m wavelength wafer-fused vertical-cavity surface-emitting lasers (VCSELs) incorporating intracavity patterning. Using a 3-D, self-consistent model of the physical phenomena in VCSELs, supported ...

Institute of Electrical and Electronics Engineers2014

750 nm 1.5 W frequency-doubled semiconductor disk laser with a 44 nm tuning range

Elyahou Kapon, Alexei Sirbu, Vladimir Iakovlev

We demonstrate 1.5 W of output power at the wavelength of 750 nm by intracavity frequency doubling a wafer-fused semiconductor disk laser diode-pumped at 980 nm. An optical-to-optical efficiency of 8.3% was achieved using a bismuth borate crystal. The wave ...

Optical Society of America2015

Polarization mode structure in long-wavelength wafer-fused vertical-cavity surface-emitting lasers

Elyahou Kapon, Alexandru Mereuta, Alexei Sirbu, Vladimir Iakovlev, Andrei Caliman, Grigore Suruceanu, Nicolas Volet

Applications of long-wavelength (lambda > 1 mu m) vertical-cavity surface-emitting lasers (VCSELs) generally require close control over wavelength and polarization of the emitted light. In most cases, single mode and polarization stable lasing is desired. ...

Spie-Int Soc Optical Engineering, Po Box 10, Bellingham, Wa 98227-0010 Usa2012

Optical Injection Locking of Polarization Modes in VCSELs Emitting at 1.3 μm Wavelength

Elyahou Kapon, Alexandru Mereuta, Alexei Sirbu, Vladimir Iakovlev, Andrei Caliman, Grigore Suruceanu, Elodie Lamothe, Christopher Michael Long

2013

Recent Progress in Wafer-Fused VCSELs Emitting in the 1550-nm Band

Elyahou Kapon, Alexandru Mereuta, Alexei Sirbu, Vladimir Iakovlev, Andrei Caliman, Grigore Suruceanu

Record-high fundamental mode output power of 1.5 mW at 100 degrees C is achieved with InAlGaAs-InP/AlGaAs-GaAs 1550 nm wavelength vertical cavity surface emitting lasers (VCSELs) produced by a modified wafer fusion technique. A broad wavelength setting on ...

Ieee Service Center, 445 Hoes Lane, Po Box 1331, Piscataway, Nj 08855-1331 Usa2011

14XX nm-wavelength electrically-pumped VECSELs fabricated by wafer fusion

Elyahou Kapon, Alexandru Mereuta, Alexei Sirbu, Vladimir Iakovlev, Andrei Caliman, Kamil Pawel Pierscinski

We report on the design, fabrication and characterization of electrically pumped vertical external cavity surface emitting lasers (EP-VECSELs) emitting at 1470 nm. We demonstrate 6.2 mW of CW output power, which represents the highest power value reported ...

Optical Society of America2013

Vertical cavity surface emitting devices incorporating wafer fused reflectors

Alexandru Mereuta, Alexei Sirbu, Andrei Caliman

The invention refers to a method of manufacturing an optoelectronic device and in particular a method of manufacturing a vertical cavity surface emitting device incorporating wafer fused reflectors. ...

Ecole Polytechnique Federale de Lausanne2013

Optical injection locking of transverse modes in 1.3-mu m wavelength coupled-VCSEL arrays

Elyahou Kapon, Benjamin Dwir, Alexandru Mereuta, Alexei Sirbu, Vladimir Iakovlev, Andrei Caliman, Lukas Mutter, Christopher Michael Long

Optical injection locking of 1.3-mu m phase-locked VCSEL arrays defined by patterned tunnel junctions and wafer fusion is investigated experimentally and theoretically. The impact of the overlap between the master laser injection beam and the injected mode ...

Optical Society of America2014

Polarization modes in long-wavelength Vertical-Cavity Surface-Emitting Lasers (VCSELs) and VCSEL-arrays

Elyahou Kapon, Alexandru Mereuta, Alexei Sirbu, Vladimir Iakovlev, Andrei Caliman, Elodie Lamothe, Lukas Mutter

Spatial transverse modes and polarization states are experimentally studied in single vertical cavity surface emitting lasers (VCSELs) and phased-locked VCSEL arrays emitting at 1.3 mu m wavelength. Analysis of the polarization-resolved near fields, far fi ...

Spie-Int Soc Optical Engineering, Po Box 10, Bellingham, Wa 98227-0010 Usa2010

1310 nm wafer fused VCSELs - a new generation of uncooled 10 Gbps telecom lasers

Elyahou Kapon, Alexandru Mereuta, Alexei Sirbu, Vladimir Iakovlev, Andrei Caliman, Grigore Suruceanu, Zlatko Mickovic, Dalila Ellafi

1310 nm-band wafer-fused VCSELs demonstrate record low 10 Gbps modulation current of 6 mA at temperatures from RT to 70 °C. Reliability studies demonstrate the suitability of this technology in commercial photonic systems. © 2012 IEEE. ...

2012