Publications de Antoine Descoeudres

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Silicon heterojunction solar cells have high open-circuit voltages thanks to excellent passivation of the wafer surfaces by thin intrinsic amorphous silicon (a-Si:H) layers deposited by plasma-enhanced chemical vapor deposition. We show a dramatic improvem ...

Amorphous/crystalline silicon interfaces feature considerably larger valence than conduction band offsets. In this article, we analyze the impact of such band offset asymmetry on the performance of silicon heterojunction solar cells. To this end, we use si ...

In silicon heterojunction solar cells, thin amorphous silicon layers passivate the crystalline silicon wafer surfaces. By using in situ diagnostics during plasma-enhanced chemical vapor deposition (PECVD), the authors report how the passivation quality of such layers directly relate to the plasma conditions. Good interface passivation is obtained from highly depleted silane plasmas. Based upon this finding, layers deposited in a large-area very high frequency (40.68 MHz) PECVD reactor were optimized for het

In silicon heterojunction solar cells, the passivation of the crystalline silicon wafer surfaces and fabrication of emitter and back surface field are all performed by intrinsic and doped amorphous silicon thin layers, usually deposited by plasma-enhanced chemical vapor deposition (PECVD). By using in-situ diagnostics during PECVD, it is found that the passivation quality of such layers directly relate to the plasma conditions, especially on the silane depletion fraction. Good interface passivation is indee

Light-induced degradation (LID) of crystalline silicon (c-Si) surfaces passivated with hydrogenated amorphous silicon (a-Si:H) is investigated. The initial passivation decays on polished c-Si(100) surfaces on a time scale much faster than usually associated with bulk a-Si:H LID. This phenomenon is absent for the a-Si:H/c-Si(111) interface. We attribute these differences to the allowed reconstructions on the respective surfaces. This may point to a link between the presence of so-called "fast" states and (in

Carrier collection in silicon heterojunction (SHJ) solar cells is usually achieved by doped amorphous silicon layers of a few nanometers, deposited at opposite sides of the crystalline silicon wafer. These layers are often defect-rich, resulting in modest ...

We report on the fabrication of back-contacted silicon heterojunction solar cells with conversion efficiencies above 21%. Our process technology relies solely on simple and size-scalable patterning methods, with no high-temperature steps. Using in situ sha ...

Combining a Si solar cell with a high-bandgap top cell reduces the thermalization losses in the short wavelength and enables theoretical 1-sun efficiencies far over 30%. We have investigated the fabrication and optimization of Si-based tandem solar cells w ...

Silicon heterojunction solar cells consist of crystalline silicon (c-Si) wafers coated with doped/intrinsic hydrogenated amorphous silicon (a-Si:H) bilayers for passivating-contact formation. Here, we unambiguously demonstrate that carrier injection either ...

We analyze the optical losses that occur in interdigitated back-contacted amorphous/crystalline silicon heterojunction solar cells. We show that in our devices, the main loss mechanisms are similar to those of two-side contacted heterojunction solar cells. ...

For crystalline-silicon solar cells, voltages close to the theoretical limit are nowadays readily achievable when using passivating contacts. Conversely, maximal current generation requires the integration of the electron and hole contacts at the back of t ...

Copper electroplating is investigated and compared with common silver printing techniques for the front metallization of silicon heterojunction solar cells. We achieve smaller feature sizes by electroplating, significantly reducing optical shadowing losses ...

Inserting a dielectric between the absorber and rear metal electrode of a solar cell increases rear internal reflectance by both limiting the transmission cone and suppressing the plasmonic absorption of light arriving outside of the cone. We fabricate rea ...

Antoine Descoeudres

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Improved amorphous/crystalline silicon interface passivation by hydrogen plasma treatment

Asymmetric band offsets in silicon heterojunction solar cells: Impact on device performance

The silane depletion fraction as an indicator for the amorphous/crystalline silicon interface passivation quality

Silane plasma diagnostics for high-efficiency silicon heterojunction solar cells

Very fast light-induced degradation of a-Si:H/c-Si(100) interfaces

Strategies for Doped Nanocrystalline Silicon Integration in Silicon Heterojunction Solar Cells

Back-Contacted Silicon Heterojunction Solar Cells With Efficiency >21%

Realization of GaInP/Si Dual-Junction Solar Cells With 29.8% 1-Sun Efficiency

Light-induced performance increase of silicon heterojunction solar cells

Back-Contacted Silicon Heterojunction Solar Cells: Optical-Loss Analysis and Mitigation

Simple processing of back-contacted silicon heterojunction solar cells using selective-area crystalline growth

Silicon Heterojunction Solar Cells With Copper-Plated Grid Electrodes: Status and Comparison With Silver Thick-Film Techniques

Experimental characterization of electrical discharge machining plasmas

Time- and spatially-resolved characterization of electrical discharge machining plasma (Invited lecture)

Time- and spatially-resolved characterization of electrical discharge machining plasma

Record Infrared Internal Quantum Efficiency in Silicon Heterojunction Solar Cells With Dielectric/Metal Rear Reflectors

Attachment-induced ionization instability in electronegative capacitive RF discharges

Optical emission spectroscopy of electrical discharge machining plasma

Negative Ions Dynamics and Attachment-induced Ionization Instability in O2, CF4 and SF6 Low-pressure Modulated Capacitive RF Plasmas

Optical emission spectroscopy of electrical discharge machining plasma