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Alexander Tagantsev

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Publications associées (131)

Flexoelectric effect in finite samples

Alexander Tagantsev

Static flexoelectric effect in a finite sample of a solid is addressed in terms of phenomenological theory for the case of a thin plate subjected to bending. It has been shown that despite an explicit asymmetry inherent to the bulk constitutive electromech ...

American Institute of Physics2012

Cold-Field Switching in PVDF-TrFE Ferroelectric Polymer Nanomesas

Nava Setter, Alexander Tagantsev, Igor Stolichnov, Evgeny Mikheev

Polarization reversal in ferroelectric nanomesas of polyvinylidene fluoride with trifluoroethylene has been probed by ultrahigh vacuum piezoresponse force microscopy in a wide temperature range from 89 to 326 K. In dramatic contrast to the macroscopic data ...

American Physical Society2012

Enhanced electromechanical response of ferroelectrics due to charged domain walls

Dragan Damjanovic, Nava Setter, Alexander Tagantsev, Maxim Gureev, Tomas Sluka

While commonly used piezoelectric materials contain lead, non-hazardous, high-performance piezoelectrics are yet to be discovered. Charged domain walls in ferroelectrics are considered inactive with regards to the piezoelectric response and, therefore, are ...

Nature Research2012

Polarization screening in polymer ferroelectric films: Uncommon bulk mechanism

Nava Setter, Alexander Tagantsev, Igor Stolichnov, Evgeny Mikheev

Charge compensation at the interface is a fundamental phenomenon determining the operation conditions of thin-film devices incorporating ferroelectrics. The underlying mechanisms have been thoroughly addressed in perovskite ferroelectrics where the charge ...

American Institute of Physics2012

Ferroelectric charged domain walls in an applied electric field

Nava Setter, Alexander Tagantsev, Pavel Mokry, Maxim Gureev

The interaction of electric field with charged domain walls in ferroelectrics is theoretically addressed. Ageneral expression for the force acting per unit area of a charged domain wall carrying free charge is derived. It is shown that, in proper ferroelec ...

American Physical Society2012

Finite-temperature flexoelectricity in ferroelectric thin films from first principles

Alexander Tagantsev

A first-principles-based effective Hamiltonian technique is developed to study flexoelectricity in (Ba0.5Sr0.5)TiO3 thin films of different thicknesses in their paraelectric phase. The magnitude as well as sign of individual components of the flexoelectric ...

2012

Impact of Strain Effects on the Stability of Ising Walls in Ferroelectrics

Nava Setter, Alexander Tagantsev, Petr Yudin

The stability of Ising 180-degree domain walls with respect to appearance of chirality is analytically studied in tetragonal perovskite-type ferroelectrics taking into account electro-mechanical coupling. It is shown that the widely used approximation negl ...

2012

Bichiral structure of ferroelectric domain walls driven by flexoelectricity

Nava Setter, Alexander Tagantsev, Petr Yudin

The influence of flexoelectric coupling on the internal structure of neutral domain walls in the tetragonal phase of perovskite ferroelectrics is studied. The effect is shown to lower the symmetry of 180 degrees walls which are oblique with respect to the ...

American Physical Society2012

Structural Determinants of the Sign of the Pyroelectric Effect in Quasi-Amorphous SrTiO3 Films

Alexander Tagantsev

The magnitude and direction of the permanent electric polarization in the non-crystalline, polar phase (termed quasi-amorphous) of SrTiO3 in Si\SiO2\Me\SrTiO3\Me, (Me = Cr or W), Si\SrRuO3\SrTiO3, and Si\SrTiO3 layered structures were investigated. Three p ...

Wiley-Blackwell2011

Control of the Screening Ability at a Ferroelectric-Semiconductor Interface

Nava Setter, Alexander Tagantsev, Maxim Gureev

Recent progress in integrating ferroelectrics directly on silicon opens the exciting possibility of implementing ferroelectric-semiconductor devices [1]. One of the major problems for such integration is the instability of the ferroelectric state in very t ...

2011

Polarization Reversal in BiFeO3 Capacitors: Complex Behavior Revealed by PFM

Paul Muralt, Nava Setter, Alexander Tagantsev, Enrico Colla, Igor Stolichnov, Monika Iwanowska

Polarization reversal in BiFeO3 (BFO) thin films in a parallel-plate capacitor configuration has been explored using piezo-force microscopy (PFM). Through-electrode mapping of the local piezoresponse allows for direct observation of the domain growth, whic ...

2011

Tunable thin film bulk acoustic wave resonator based on BaxSr1-xTiO3 thin film

Paul Muralt, Nava Setter, Alexander Tagantsev, Andreas Nöth

A tunable membrane-type thin film bulk acoustic wave resonator (TFBAR) based on a Ba0.3Sr0.7TiO3(BST) thin film has been fabricated. The resonance and antiresonance frequencies of the device can be altered by applying a dc bias: both shift down with increa ...

2010

Direct Observation of Capacitor Switching Using Planar Electrodes

Alexander Tagantsev

Ferroelectric polarization switching in epitaxial (110) BiFeO3 films is studied using piezoresponse force microscopy of a model in-plane capacitor structure. The electrode orientation is chosen such that only two active domain variants exist. Studies of th ...

Wiley-Blackwell2010

Effect of mechanical loading on the tuning of acoustic resonances in Ba (x) Sr1-x TiO3 thin films

Nava Setter, Alexander Tagantsev, Andreas Nöth

The effect of mechanical loading on the tuning performance of a tunable Thin Film Bulk Acoustic Wave Resonator (TFBAR) based on a Ba0.3Sr0.7TiO3 (BST) thin film has been investigated experimentally and theoretically. A membrane-type TFBAR was fabricated by ...

Springer US2010

Electrical tuning of dc bias induced acoustic resonances in paraelectric thin films (vol 104, 094102, 2008)

Nava Setter, Alexander Tagantsev

2010

Cation-site intrinsic defects in Zn-doped CdTe

Nava Setter, Alexander Tagantsev, Alexandra Sarabando de Carvalho

The properties of the cation vacancy and the Te antisite, two dominant defects in CdTe and Cd1-xZnxTe alloys grown in Te-rich conditions, are examined using first-principles calculations. First, the structure, electronic levels, and migration paths of V-Cd ...

2010

Anomalous dielectric peak in Mg and Li doped ZnO ceramics and thin films

Nava Setter, Alexander Tagantsev

In this manuscript we report dielectric measurements of Mg and Li doped ZnO ceramics and thin films of various compositions. We have tried to reproduce the reported ferroelectriclike behavior in doped ZnO ceramics and thin films and observed anomalous diel ...

AIP American Institute of Physics2010

Synthesis, structure, and electrical behavior of Sr4Bi4Ti7O24

Alexander Tagantsev, Yihan Jia

An n=7 Aurivillius phase, Sr4Bi4Ti7O24, with c=6.44 nm, was synthesized as an epitaxial (001)-oriented film. This phase and its purity were confirmed by x-ray diffraction and transmission electron microscopy. The material is ferroelectric, with a P-r=5.3 m ...

American Institute of Physics2010

Polar phonons in some compressively stressed epitaxial and polycrystalline SrTiO3 thin films

Nava Setter, Alexander Tagantsev

everal SrTiO3 (STO) thin films without electrodes processed by pulsed laser deposition, of thicknesses down to 40 nm, were studied using infrared transmission and reflection spectroscopy. The complex dielectric responses of polar phonon modes, particularly ...

2009

Novel Electromechanical Phenomena at the Nanoscale: Phenomenological Theory and Atomistic Modeling

Alexander Tagantsev

In the past two decades, the fact that “small is different” has been established for a wide variety of phenomena, including electrical, optical, magnetic, and mechanical behavior of materials. However, one largely untapped but potentially very important ar ...

2009

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