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Alexander Tagantsev

Cette personne a quitté l’EPFL

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Publications associées (129)

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Positive effective Q(12) electrostrictive coefficient in perovskites

Alexander Tagantsev, Alexander Kvasov

It is demonstrated that for classical perovskites, such as BaTiO3; SrTiO3, and PbTiO3, electrostrictive strain induced by an electric field may not obey traditionally considered "extension along the field and contraction perpendicular to it" behavior if th ...

American Institute of Physics2012

Ferroelectric-dielectric tunable composites

Nava Setter, Alexander Tagantsev

The dielectric response of ferroelectric-dielectric composites is theoretically addressed. Dielectric permittivity, tunability (relative change of the permittivity driven by dc electric field), and loss tangent are evaluated for various composite models. T ...

2006

Retention in nonvolatile silicon transistors with an organic ferroelectric gate

Mihai Adrian Ionescu, Nava Setter, Alexander Tagantsev, Didier Bouvet, Igor Stolichnov, Sebastian Riester, Roman Gysel, Giovanni Antonio Salvatore

A silicone-based one-transistor nonvolatile memory cell has been implemented by integration of a ferroelectric polymer gate on a standard n- type metal oxide semiconductor field effect transistor. The polarization reversal in the gate results in a stable a ...

AIP American Institute of Physics2009

Influence of flexoelectric coupling on domain patterns in ferroelectrics

Alexander Tagantsev, Nava Setter, Petr Yudin

Using Ginzburg-Landau theory and two-dimensional (2D) phase field simulations, we analyze the influence of flexoelectric coupling on the domain patterns in ferroelectrics. The phase field simulations predict that a high strength of the flexoelectric coupli ...

American Physical Society2014

Microscopic aspects of the region-by-region polarization reversal kinetics of polycrystalline ferroelectric Pb(Zr,Ti)O-3 films

Nava Setter, Alexander Tagantsev, Igor Stolichnov, Enrico Colla, Lisa Malin

The region-by-region polarization switching in ferroelectric Pb(Zr,Ti)O-3 thin films sandwiched between Pt electrodes has been directly observed using piezoelectric scanning probe microscopy. A resolution improved by one order-of-magnitude compared to the ...

2005

Upper bounds for flexoelectric coefficients in ferroelectrics

Alexander Tagantsev, Petr Yudin

Flexoelectric effect is the response of electric polarization to the mechanical strain gradient. At the nano-scale, where large strain gradients are expected, the flexoelectric effect becomes appreciable and may substitute piezoelectric effect in centrosym ...

American Institute of Physics2014

Polarization Reversal in BiFeO3 Capacitors: Complex Behavior Revealed by PFM

Nava Setter, Paul Muralt, Alexander Tagantsev, Igor Stolichnov, Enrico Colla, Monika Iwanowska

Polarization reversal in BiFeO3 (BFO) thin films in a parallel-plate capacitor configuration has been explored using piezo-force microscopy (PFM). Through-electrode mapping of the local piezoresponse allows for direct observation of the domain growth, whic ...

2011

Free-electron gas at charged domain walls in insulating BaTiO3

Alexander Tagantsev, Nava Setter, Tomas Sluka, Petr Bednyakov

Hetero interfaces between metal-oxides display pronounced phenomena such as semiconductor-metal transitions, magnetoresistance, the quantum hall effect and superconductivity. Similar effects at compositionally homogeneous interfaces including ferroic domai ...

Nature Publishing Group2013

Physics and applications of charged domain walls

Alexander Tagantsev, Tomas Sluka, Petr Yudin, Petr Bednyakov

The charged domain wall is an ultrathin (typically nanosized) interface between two domains; it carries bound charge owing to a change of normal component of spontaneous polarization on crossing the wall. In contrast to hetero-interfaces between different ...

2018

Room temperature concurrent formation of ultra-dense arrays of ferroelectric domain walls

Alexander Tagantsev, Nava Setter, Ludwig Feigl, Petr Yudin, Konstantin Shapovalov, Mahamudu Mtebwa

Properties of ferroelectric domain walls are attractive for future nano- and optoelectronics. An important element is the potential to electrically erase/rewrite domain walls inside working devices. Dense domain wall patterns, formed upon cooling through t ...

American Institute of Physics2015

Effect of spontaneous polarization screening on dielectric response of ferroelectric polydomain films

Nava Setter, Alexander Tagantsev

A theoretical study on the effect of spontaneous polarization screening on the dielectric response of ferroelectric films with 180 degrees domains going through the film thickness (through-domains) is presented. It has been shown by several researchers tha ...

2005

Dissipative optomechanical coupling with a membrane outside of an optical cavity

Alexander Tagantsev

We theoretically study an optomechanical system which consists of a two-sided cavity and a mechanical membrane that is placed outside of it. The membrane is positioned close to one of its mirrors, and the cavity is coupled to the external light field throu ...

AMER PHYSICAL SOC2021

Cation-site intrinsic defects in Zn-doped CdTe

Nava Setter, Alexander Tagantsev, Alexandra Sarabando de Carvalho

The properties of the cation vacancy and the Te antisite, two dominant defects in CdTe and Cd1-xZnxTe alloys grown in Te-rich conditions, are examined using first-principles calculations. First, the structure, electronic levels, and migration paths of V-Cd ...

2010

Control of the Screening Ability at a Ferroelectric-Semiconductor Interface

Nava Setter, Alexander Tagantsev, Maxim Gureev

Recent progress in integrating ferroelectrics directly on silicon opens the exciting possibility of implementing ferroelectric-semiconductor devices [1]. One of the major problems for such integration is the instability of the ferroelectric state in very t ...

2011

Anomalous dielectric peak in Mg and Li doped ZnO ceramics and thin films

Nava Setter, Alexander Tagantsev

In this manuscript we report dielectric measurements of Mg and Li doped ZnO ceramics and thin films of various compositions. We have tried to reproduce the reported ferroelectriclike behavior in doped ZnO ceramics and thin films and observed anomalous diel ...

AIP American Institute of Physics2010

Ferroelectric translational antiphase boundaries in nonpolar materials

Nava Setter, Alexander Tagantsev, Alexander Kvasov

Ferroelectric materials are heavily used in electro-mechanics and electronics. Inside the ferroelectric, domain walls separate regions in which the spontaneous polarization is differently oriented. Properties of ferroelectric domain walls can differ from t ...

Nature Research2014

Fundamentals of flexoelectricity in solids

Alexander Tagantsev, Petr Yudin

The flexoelectric effect is the response of electric polarization to a mechanical strain gradient. It can be viewed as a higher-order effect with respect to piezoelectricity, which is the response of polarization to strain itself. However, at the nanoscale ...

Institute of Physics2013

Critical scattering and incommensurate phase transition in antiferroelectric PbZrO3 under pressure

Alexander Tagantsev

Antiferroelectric lead zirconate is the key ingredient in modern ferroelectric and piezoelectric functional solid solutions. By itself it offers opportunities in new-type non-volatile memory and energy storage applications. A highly useful and scientifical ...

Springer Nature2017

Elastic Coupling between Nonferroelastic Domain Walls

Nava Setter, Alexander Tagantsev, Petr Yudin, Konstantin Shapovalov

We reveal a strong elastic interaction between nonferroelastic domain walls in ferroelectric thin films. This interaction, having no analogue in bulk materials, is governed by elastic fields that are associated with the domain walls and extends to distance ...

American Physical Society2014

Phase transitions associated with competing order parameters in compressively strained SrTiO3 thin films

Alexander Tagantsev, Harry Joseph Trodahl

(100)-epitaxial SrTiO3 thin films having biaxial compressive strains up to -1.60% were grown on lattice mismatched substrates. Two phase transitions induced by the coupled instabilities (antiferrodistortive and ferroelectric) in SrTiO3 were revealed in a c ...

Amer Physical Soc2015